{"title":"沉积温度对本征CVD-SiC微观结构和电阻率的影响","authors":"Jiabao Liu , Zhaofeng Chen , Pan Chai , Qiang Wan","doi":"10.1016/j.ceramint.2025.03.174","DOIUrl":null,"url":null,"abstract":"<div><div>CVD bulk SiC is widely used in plasma etching equipment chamber components, such as focus rings. Moreover, the resistivity requirements of the CVD SiC focus ring are different under different etching processes, with a difference of 7-8 orders of magnitude. In this study, Bulk SiC with different microstructures was prepared at deposition temperatures of 1250 °C, 1350 °C and 1450 °C. As the deposition temperature increases, the resistivity decreases from 4.3 × 10<sup>3</sup> Ω cm to 1.8 × 10<sup>3</sup> Ω cm, and then significantly decreases to 3.1 Ω cm. It was found that the carrier concentration gradually increased with the deposition concentration, which was caused by the combined effect of background doping and thermal excitation; while the mobility showed a significant decrease at first and then a slight increase. The first significant decrease in migration is due to the increase in grain boundary barrier and enhanced carrier scattering, and the subsequent slight increase is caused by the significant decrease in grain size.</div></div>","PeriodicalId":267,"journal":{"name":"Ceramics International","volume":"51 18","pages":"Pages 24935-24944"},"PeriodicalIF":5.1000,"publicationDate":"2025-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effects of deposition temperature on microstructure and electrical resistivity of intrinsic CVD-SiC\",\"authors\":\"Jiabao Liu , Zhaofeng Chen , Pan Chai , Qiang Wan\",\"doi\":\"10.1016/j.ceramint.2025.03.174\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>CVD bulk SiC is widely used in plasma etching equipment chamber components, such as focus rings. Moreover, the resistivity requirements of the CVD SiC focus ring are different under different etching processes, with a difference of 7-8 orders of magnitude. In this study, Bulk SiC with different microstructures was prepared at deposition temperatures of 1250 °C, 1350 °C and 1450 °C. As the deposition temperature increases, the resistivity decreases from 4.3 × 10<sup>3</sup> Ω cm to 1.8 × 10<sup>3</sup> Ω cm, and then significantly decreases to 3.1 Ω cm. It was found that the carrier concentration gradually increased with the deposition concentration, which was caused by the combined effect of background doping and thermal excitation; while the mobility showed a significant decrease at first and then a slight increase. The first significant decrease in migration is due to the increase in grain boundary barrier and enhanced carrier scattering, and the subsequent slight increase is caused by the significant decrease in grain size.</div></div>\",\"PeriodicalId\":267,\"journal\":{\"name\":\"Ceramics International\",\"volume\":\"51 18\",\"pages\":\"Pages 24935-24944\"},\"PeriodicalIF\":5.1000,\"publicationDate\":\"2025-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Ceramics International\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S027288422501291X\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"MATERIALS SCIENCE, CERAMICS\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Ceramics International","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S027288422501291X","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, CERAMICS","Score":null,"Total":0}
Effects of deposition temperature on microstructure and electrical resistivity of intrinsic CVD-SiC
CVD bulk SiC is widely used in plasma etching equipment chamber components, such as focus rings. Moreover, the resistivity requirements of the CVD SiC focus ring are different under different etching processes, with a difference of 7-8 orders of magnitude. In this study, Bulk SiC with different microstructures was prepared at deposition temperatures of 1250 °C, 1350 °C and 1450 °C. As the deposition temperature increases, the resistivity decreases from 4.3 × 103 Ω cm to 1.8 × 103 Ω cm, and then significantly decreases to 3.1 Ω cm. It was found that the carrier concentration gradually increased with the deposition concentration, which was caused by the combined effect of background doping and thermal excitation; while the mobility showed a significant decrease at first and then a slight increase. The first significant decrease in migration is due to the increase in grain boundary barrier and enhanced carrier scattering, and the subsequent slight increase is caused by the significant decrease in grain size.
期刊介绍:
Ceramics International covers the science of advanced ceramic materials. The journal encourages contributions that demonstrate how an understanding of the basic chemical and physical phenomena may direct materials design and stimulate ideas for new or improved processing techniques, in order to obtain materials with desired structural features and properties.
Ceramics International covers oxide and non-oxide ceramics, functional glasses, glass ceramics, amorphous inorganic non-metallic materials (and their combinations with metal and organic materials), in the form of particulates, dense or porous bodies, thin/thick films and laminated, graded and composite structures. Process related topics such as ceramic-ceramic joints or joining ceramics with dissimilar materials, as well as surface finishing and conditioning are also covered. Besides traditional processing techniques, manufacturing routes of interest include innovative procedures benefiting from externally applied stresses, electromagnetic fields and energetic beams, as well as top-down and self-assembly nanotechnology approaches. In addition, the journal welcomes submissions on bio-inspired and bio-enabled materials designs, experimentally validated multi scale modelling and simulation for materials design, and the use of the most advanced chemical and physical characterization techniques of structure, properties and behaviour.
Technologically relevant low-dimensional systems are a particular focus of Ceramics International. These include 0, 1 and 2-D nanomaterials (also covering CNTs, graphene and related materials, and diamond-like carbons), their nanocomposites, as well as nano-hybrids and hierarchical multifunctional nanostructures that might integrate molecular, biological and electronic components.