采用简单的一步空气环境热氧化工艺实现了高性能多晶β Ga2O3/GaN太阳盲光电探测器

IF 6.3 2区 材料科学 Q2 CHEMISTRY, PHYSICAL
Vijay B. Patil, Girish U. Kamble, Jun Sung Jang, R.B.V. Chalapathy, Jin-Hyeok Kim
{"title":"采用简单的一步空气环境热氧化工艺实现了高性能多晶β Ga2O3/GaN太阳盲光电探测器","authors":"Vijay B. Patil, Girish U. Kamble, Jun Sung Jang, R.B.V. Chalapathy, Jin-Hyeok Kim","doi":"10.1016/j.apsusc.2025.163919","DOIUrl":null,"url":null,"abstract":"A broadband (200–400 nm) ultraviolet photoresponse encompassing β-Ga<ce:inf loc=\"post\">2</ce:inf>O<ce:inf loc=\"post\">3</ce:inf>/GaN photodetectors (PDs) has been fabricated by applying one-step thermal oxidization to counter complex and traditional sophisticated growth techniques. A feasible, low cost, and simple muffle box furnace for an air-ambient thermal oxidization approach has been demonstrated in this work. XRD, AFM, and SEM characterizations were performed on fabricated Ga<ce:inf loc=\"post\">2</ce:inf>O<ce:inf loc=\"post\">3</ce:inf> layers from annealed single crystalline GaN (0001) wafers at various temperatures. A polycrystalline β-Ga<ce:inf loc=\"post\">2</ce:inf>O<ce:inf loc=\"post\">3</ce:inf> layer was formed with highly (<mml:math altimg=\"si2.svg\"><mml:mover accent=\"true\"><mml:mrow><mml:mn>2</mml:mn></mml:mrow><mml:mrow><mml:mo stretchy=\"false\">¯</mml:mo></mml:mrow></mml:mover></mml:math> 01) orientation, having low FWHM value of 0.22 and a surface roughness of 11.41 nm with well-formed, rhombohedral-shaped morphology at optimal 900 ˚C. XPS and EDS analysis also confirmed the transition of GaN surface layer to Ga<ce:inf loc=\"post\">2</ce:inf>O<ce:inf loc=\"post\">3</ce:inf> thin film formation. Under the bias of −5, −4 and −3, <ce:italic>R</ce:italic> (responsivity) were measured as 10.86, 8.34, and 7.06 A/W, whereas <ce:italic>D</ce:italic> (detectivity) recorded as 1.32 × 10<ce:sup loc=\"post\">11</ce:sup>, 2.51 × 10<ce:sup loc=\"post\">11</ce:sup> and 3.93 × 10<ce:sup loc=\"post\">11</ce:sup> Jones under the 254 nm light illumination, respectively. The performance of photodetectors demonstrates repeated and stable temporal photoresponse under both UVC and UVB illumination measurements. These experimental results reveal the potential for the development of Ga<ce:inf loc=\"post\">2</ce:inf>O<ce:inf loc=\"post\">3</ce:inf>-based solar-blind photodetectors utilizing low-cost muffle furnace thermal oxidization technique.","PeriodicalId":247,"journal":{"name":"Applied Surface Science","volume":"89 1","pages":""},"PeriodicalIF":6.3000,"publicationDate":"2025-06-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High performance polycrystalline β Ga2O3/GaN solar blind photodetector realized via simple one step air ambient thermal oxidation process\",\"authors\":\"Vijay B. Patil, Girish U. Kamble, Jun Sung Jang, R.B.V. Chalapathy, Jin-Hyeok Kim\",\"doi\":\"10.1016/j.apsusc.2025.163919\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A broadband (200–400 nm) ultraviolet photoresponse encompassing β-Ga<ce:inf loc=\\\"post\\\">2</ce:inf>O<ce:inf loc=\\\"post\\\">3</ce:inf>/GaN photodetectors (PDs) has been fabricated by applying one-step thermal oxidization to counter complex and traditional sophisticated growth techniques. A feasible, low cost, and simple muffle box furnace for an air-ambient thermal oxidization approach has been demonstrated in this work. XRD, AFM, and SEM characterizations were performed on fabricated Ga<ce:inf loc=\\\"post\\\">2</ce:inf>O<ce:inf loc=\\\"post\\\">3</ce:inf> layers from annealed single crystalline GaN (0001) wafers at various temperatures. A polycrystalline β-Ga<ce:inf loc=\\\"post\\\">2</ce:inf>O<ce:inf loc=\\\"post\\\">3</ce:inf> layer was formed with highly (<mml:math altimg=\\\"si2.svg\\\"><mml:mover accent=\\\"true\\\"><mml:mrow><mml:mn>2</mml:mn></mml:mrow><mml:mrow><mml:mo stretchy=\\\"false\\\">¯</mml:mo></mml:mrow></mml:mover></mml:math> 01) orientation, having low FWHM value of 0.22 and a surface roughness of 11.41 nm with well-formed, rhombohedral-shaped morphology at optimal 900 ˚C. XPS and EDS analysis also confirmed the transition of GaN surface layer to Ga<ce:inf loc=\\\"post\\\">2</ce:inf>O<ce:inf loc=\\\"post\\\">3</ce:inf> thin film formation. Under the bias of −5, −4 and −3, <ce:italic>R</ce:italic> (responsivity) were measured as 10.86, 8.34, and 7.06 A/W, whereas <ce:italic>D</ce:italic> (detectivity) recorded as 1.32 × 10<ce:sup loc=\\\"post\\\">11</ce:sup>, 2.51 × 10<ce:sup loc=\\\"post\\\">11</ce:sup> and 3.93 × 10<ce:sup loc=\\\"post\\\">11</ce:sup> Jones under the 254 nm light illumination, respectively. The performance of photodetectors demonstrates repeated and stable temporal photoresponse under both UVC and UVB illumination measurements. These experimental results reveal the potential for the development of Ga<ce:inf loc=\\\"post\\\">2</ce:inf>O<ce:inf loc=\\\"post\\\">3</ce:inf>-based solar-blind photodetectors utilizing low-cost muffle furnace thermal oxidization technique.\",\"PeriodicalId\":247,\"journal\":{\"name\":\"Applied Surface Science\",\"volume\":\"89 1\",\"pages\":\"\"},\"PeriodicalIF\":6.3000,\"publicationDate\":\"2025-06-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Applied Surface Science\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1016/j.apsusc.2025.163919\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"CHEMISTRY, PHYSICAL\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Surface Science","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1016/j.apsusc.2025.163919","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 0

摘要

利用一步热氧化技术制备了一种宽带(200-400 nm)紫外响应的β-Ga2O3/GaN光电探测器(pd),以对抗复杂和传统的复杂生长技术。本文介绍了一种可行的、低成本的、简单的用于空气-环境热氧化的马弗箱炉。采用XRD、AFM和SEM对退火单晶GaN(0001)晶圆制备的Ga2O3层进行了表征。在900℃条件下,形成了高(2¯01)取向的β-Ga2O3多晶层,FWHM值较低,为0.22,表面粗糙度为11.41 nm,形貌良好,呈菱形。XPS和EDS分析也证实了GaN表面层向Ga2O3薄膜的转变。在−5、−4和−3的偏置下,R(响应度)分别为10.86、8.34和7.06 A/W,而D(探测度)分别为1.32 × 1011、2.51 × 1011和3.93 × 1011 Jones。在UVC和UVB照明测量下,光电探测器的性能表现出重复和稳定的时间光响应。这些实验结果揭示了利用低成本马弗炉热氧化技术开发ga2o3基太阳盲光电探测器的潜力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
High performance polycrystalline β Ga2O3/GaN solar blind photodetector realized via simple one step air ambient thermal oxidation process
A broadband (200–400 nm) ultraviolet photoresponse encompassing β-Ga2O3/GaN photodetectors (PDs) has been fabricated by applying one-step thermal oxidization to counter complex and traditional sophisticated growth techniques. A feasible, low cost, and simple muffle box furnace for an air-ambient thermal oxidization approach has been demonstrated in this work. XRD, AFM, and SEM characterizations were performed on fabricated Ga2O3 layers from annealed single crystalline GaN (0001) wafers at various temperatures. A polycrystalline β-Ga2O3 layer was formed with highly (2¯ 01) orientation, having low FWHM value of 0.22 and a surface roughness of 11.41 nm with well-formed, rhombohedral-shaped morphology at optimal 900 ˚C. XPS and EDS analysis also confirmed the transition of GaN surface layer to Ga2O3 thin film formation. Under the bias of −5, −4 and −3, R (responsivity) were measured as 10.86, 8.34, and 7.06 A/W, whereas D (detectivity) recorded as 1.32 × 1011, 2.51 × 1011 and 3.93 × 1011 Jones under the 254 nm light illumination, respectively. The performance of photodetectors demonstrates repeated and stable temporal photoresponse under both UVC and UVB illumination measurements. These experimental results reveal the potential for the development of Ga2O3-based solar-blind photodetectors utilizing low-cost muffle furnace thermal oxidization technique.
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来源期刊
Applied Surface Science
Applied Surface Science 工程技术-材料科学:膜
CiteScore
12.50
自引率
7.50%
发文量
3393
审稿时长
67 days
期刊介绍: Applied Surface Science covers topics contributing to a better understanding of surfaces, interfaces, nanostructures and their applications. The journal is concerned with scientific research on the atomic and molecular level of material properties determined with specific surface analytical techniques and/or computational methods, as well as the processing of such structures.
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