Vijay B. Patil, Girish U. Kamble, Jun Sung Jang, R.B.V. Chalapathy, Jin-Hyeok Kim
{"title":"采用简单的一步空气环境热氧化工艺实现了高性能多晶β Ga2O3/GaN太阳盲光电探测器","authors":"Vijay B. Patil, Girish U. Kamble, Jun Sung Jang, R.B.V. Chalapathy, Jin-Hyeok Kim","doi":"10.1016/j.apsusc.2025.163919","DOIUrl":null,"url":null,"abstract":"A broadband (200–400 nm) ultraviolet photoresponse encompassing β-Ga<ce:inf loc=\"post\">2</ce:inf>O<ce:inf loc=\"post\">3</ce:inf>/GaN photodetectors (PDs) has been fabricated by applying one-step thermal oxidization to counter complex and traditional sophisticated growth techniques. A feasible, low cost, and simple muffle box furnace for an air-ambient thermal oxidization approach has been demonstrated in this work. XRD, AFM, and SEM characterizations were performed on fabricated Ga<ce:inf loc=\"post\">2</ce:inf>O<ce:inf loc=\"post\">3</ce:inf> layers from annealed single crystalline GaN (0001) wafers at various temperatures. A polycrystalline β-Ga<ce:inf loc=\"post\">2</ce:inf>O<ce:inf loc=\"post\">3</ce:inf> layer was formed with highly (<mml:math altimg=\"si2.svg\"><mml:mover accent=\"true\"><mml:mrow><mml:mn>2</mml:mn></mml:mrow><mml:mrow><mml:mo stretchy=\"false\">¯</mml:mo></mml:mrow></mml:mover></mml:math> 01) orientation, having low FWHM value of 0.22 and a surface roughness of 11.41 nm with well-formed, rhombohedral-shaped morphology at optimal 900 ˚C. XPS and EDS analysis also confirmed the transition of GaN surface layer to Ga<ce:inf loc=\"post\">2</ce:inf>O<ce:inf loc=\"post\">3</ce:inf> thin film formation. Under the bias of −5, −4 and −3, <ce:italic>R</ce:italic> (responsivity) were measured as 10.86, 8.34, and 7.06 A/W, whereas <ce:italic>D</ce:italic> (detectivity) recorded as 1.32 × 10<ce:sup loc=\"post\">11</ce:sup>, 2.51 × 10<ce:sup loc=\"post\">11</ce:sup> and 3.93 × 10<ce:sup loc=\"post\">11</ce:sup> Jones under the 254 nm light illumination, respectively. The performance of photodetectors demonstrates repeated and stable temporal photoresponse under both UVC and UVB illumination measurements. These experimental results reveal the potential for the development of Ga<ce:inf loc=\"post\">2</ce:inf>O<ce:inf loc=\"post\">3</ce:inf>-based solar-blind photodetectors utilizing low-cost muffle furnace thermal oxidization technique.","PeriodicalId":247,"journal":{"name":"Applied Surface Science","volume":"89 1","pages":""},"PeriodicalIF":6.3000,"publicationDate":"2025-06-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High performance polycrystalline β Ga2O3/GaN solar blind photodetector realized via simple one step air ambient thermal oxidation process\",\"authors\":\"Vijay B. Patil, Girish U. Kamble, Jun Sung Jang, R.B.V. Chalapathy, Jin-Hyeok Kim\",\"doi\":\"10.1016/j.apsusc.2025.163919\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A broadband (200–400 nm) ultraviolet photoresponse encompassing β-Ga<ce:inf loc=\\\"post\\\">2</ce:inf>O<ce:inf loc=\\\"post\\\">3</ce:inf>/GaN photodetectors (PDs) has been fabricated by applying one-step thermal oxidization to counter complex and traditional sophisticated growth techniques. A feasible, low cost, and simple muffle box furnace for an air-ambient thermal oxidization approach has been demonstrated in this work. XRD, AFM, and SEM characterizations were performed on fabricated Ga<ce:inf loc=\\\"post\\\">2</ce:inf>O<ce:inf loc=\\\"post\\\">3</ce:inf> layers from annealed single crystalline GaN (0001) wafers at various temperatures. A polycrystalline β-Ga<ce:inf loc=\\\"post\\\">2</ce:inf>O<ce:inf loc=\\\"post\\\">3</ce:inf> layer was formed with highly (<mml:math altimg=\\\"si2.svg\\\"><mml:mover accent=\\\"true\\\"><mml:mrow><mml:mn>2</mml:mn></mml:mrow><mml:mrow><mml:mo stretchy=\\\"false\\\">¯</mml:mo></mml:mrow></mml:mover></mml:math> 01) orientation, having low FWHM value of 0.22 and a surface roughness of 11.41 nm with well-formed, rhombohedral-shaped morphology at optimal 900 ˚C. XPS and EDS analysis also confirmed the transition of GaN surface layer to Ga<ce:inf loc=\\\"post\\\">2</ce:inf>O<ce:inf loc=\\\"post\\\">3</ce:inf> thin film formation. Under the bias of −5, −4 and −3, <ce:italic>R</ce:italic> (responsivity) were measured as 10.86, 8.34, and 7.06 A/W, whereas <ce:italic>D</ce:italic> (detectivity) recorded as 1.32 × 10<ce:sup loc=\\\"post\\\">11</ce:sup>, 2.51 × 10<ce:sup loc=\\\"post\\\">11</ce:sup> and 3.93 × 10<ce:sup loc=\\\"post\\\">11</ce:sup> Jones under the 254 nm light illumination, respectively. The performance of photodetectors demonstrates repeated and stable temporal photoresponse under both UVC and UVB illumination measurements. 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High performance polycrystalline β Ga2O3/GaN solar blind photodetector realized via simple one step air ambient thermal oxidation process
A broadband (200–400 nm) ultraviolet photoresponse encompassing β-Ga2O3/GaN photodetectors (PDs) has been fabricated by applying one-step thermal oxidization to counter complex and traditional sophisticated growth techniques. A feasible, low cost, and simple muffle box furnace for an air-ambient thermal oxidization approach has been demonstrated in this work. XRD, AFM, and SEM characterizations were performed on fabricated Ga2O3 layers from annealed single crystalline GaN (0001) wafers at various temperatures. A polycrystalline β-Ga2O3 layer was formed with highly (2¯ 01) orientation, having low FWHM value of 0.22 and a surface roughness of 11.41 nm with well-formed, rhombohedral-shaped morphology at optimal 900 ˚C. XPS and EDS analysis also confirmed the transition of GaN surface layer to Ga2O3 thin film formation. Under the bias of −5, −4 and −3, R (responsivity) were measured as 10.86, 8.34, and 7.06 A/W, whereas D (detectivity) recorded as 1.32 × 1011, 2.51 × 1011 and 3.93 × 1011 Jones under the 254 nm light illumination, respectively. The performance of photodetectors demonstrates repeated and stable temporal photoresponse under both UVC and UVB illumination measurements. These experimental results reveal the potential for the development of Ga2O3-based solar-blind photodetectors utilizing low-cost muffle furnace thermal oxidization technique.
期刊介绍:
Applied Surface Science covers topics contributing to a better understanding of surfaces, interfaces, nanostructures and their applications. The journal is concerned with scientific research on the atomic and molecular level of material properties determined with specific surface analytical techniques and/or computational methods, as well as the processing of such structures.