等离子体辅助分子束外延在m平面蓝宝石衬底上富al α-(AlGa)2O3和α- al2o3 /Ga2O3超晶格的应变弛豫

IF 4.4 3区 材料科学 Q2 CHEMISTRY, MULTIDISCIPLINARY
Riena Jinno, Hironori Okumura
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引用次数: 0

摘要

富al α-(AlxGa1-x)2O3单层在x &gt作用下的应变弛豫采用分子束外延技术在m平面蓝宝石衬底上生长α-Al2O3/Ga2O3超晶格结构。伪晶生长的α-(AlGa)2O3单层的对称全宽半最大值小于400 arcsec,但随着α-(AlGa)2O3层中晶格弛豫释放压应力,α-(AlGa)2O3层的对称全宽半最大值显著增大。部分松弛样品的透射电镜(TEM)显示,在样品表面形成了带有螺旋元件的v型位错,而初始界面层表现出较低的位错密度,因为v型位错没有完全延伸到脱毛层/衬底界面。α-(AlGa)2O3层中位错密度的变化导致两个明显的XRD峰。透射电镜观察表明,最可能的弛豫系统为{ 01 1¯2 } 1 3⟨0 1¯11⟩$\{ {01\bar 12} \}\frac{1}{3}\langle {0\bar 111} \rangle $。对α-Al2O3/Ga2O3超晶格结构的扫描电镜观察表明,α-Ga2O3层以Stranski-Krastanov (SK)模式生长。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Strain Relaxation of Al-Rich α-(AlGa)2O3 and α-Al2O3/Ga2O3 Superlattice on m-Plane Sapphire Substrates by Plasma-Assisted Molecular Beam Epitaxy

Strain Relaxation of Al-Rich α-(AlGa)2O3 and α-Al2O3/Ga2O3 Superlattice on m-Plane Sapphire Substrates by Plasma-Assisted Molecular Beam Epitaxy

The strain relaxation of Al-rich α-(AlxGa1-x)2O3 single layers with x > 0.6 and an α-Al2O3/Ga2O3 superlattice structure grown on m-plane sapphire substrates by molecular beam epitaxy is investigated. Symmetrical full-width half maximum values of X-ray diffraction (XRD) omega scans are less than 400 arcsec for pseudomorphically grown α-(AlGa)2O3 single layers, but increase significantly as compressive stresses in the α-(AlGa)2O3 layers are released due to lattice relaxation. Transmission electron microscopy (TEM) for a partially relaxed sample reveals the formation of V-shaped dislocations with screw components on the sample surface, while the initial interface layer exhibits a low dislocation density, as the V-shaped dislocations do not completely extend to the epilayer/substrate interface. The variation in dislocation density in the α-(AlGa)2O3 layer results in two distinct XRD peaks. The TEM observation suggests the most probable relaxation system of { 01 1 ¯ 2 } 1 3 0 1 ¯ 11 $\{ {01\bar 12} \}\frac{1}{3}\langle {0\bar 111} \rangle $ . Scanning TEM observation for the α-Al2O3/Ga2O3 superlattice structure reveals that the α-Ga2O3 layers are grown in the Stranski-Krastanov (SK) mode.

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来源期刊
Advanced Materials Interfaces
Advanced Materials Interfaces CHEMISTRY, MULTIDISCIPLINARY-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
8.40
自引率
5.60%
发文量
1174
审稿时长
1.3 months
期刊介绍: Advanced Materials Interfaces publishes top-level research on interface technologies and effects. Considering any interface formed between solids, liquids, and gases, the journal ensures an interdisciplinary blend of physics, chemistry, materials science, and life sciences. Advanced Materials Interfaces was launched in 2014 and received an Impact Factor of 4.834 in 2018. The scope of Advanced Materials Interfaces is dedicated to interfaces and surfaces that play an essential role in virtually all materials and devices. Physics, chemistry, materials science and life sciences blend to encourage new, cross-pollinating ideas, which will drive forward our understanding of the processes at the interface. Advanced Materials Interfaces covers all topics in interface-related research: Oil / water separation, Applications of nanostructured materials, 2D materials and heterostructures, Surfaces and interfaces in organic electronic devices, Catalysis and membranes, Self-assembly and nanopatterned surfaces, Composite and coating materials, Biointerfaces for technical and medical applications. Advanced Materials Interfaces provides a forum for topics on surface and interface science with a wide choice of formats: Reviews, Full Papers, and Communications, as well as Progress Reports and Research News.
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