{"title":"等离子体辅助分子束外延在m平面蓝宝石衬底上富al α-(AlGa)2O3和α- al2o3 /Ga2O3超晶格的应变弛豫","authors":"Riena Jinno, Hironori Okumura","doi":"10.1002/admi.202500136","DOIUrl":null,"url":null,"abstract":"<p>The strain relaxation of Al-rich α-(Al<i><sub>x</sub></i>Ga<sub>1-</sub><i><sub>x</sub></i>)<sub>2</sub>O<sub>3</sub> single layers with <i>x</i> > 0.6 and an α-Al<sub>2</sub>O<sub>3</sub>/Ga<sub>2</sub>O<sub>3</sub> superlattice structure grown on <i>m</i>-plane sapphire substrates by molecular beam epitaxy is investigated. Symmetrical full-width half maximum values of X-ray diffraction (XRD) omega scans are less than 400 arcsec for pseudomorphically grown α-(AlGa)<sub>2</sub>O<sub>3</sub> single layers, but increase significantly as compressive stresses in the α-(AlGa)<sub>2</sub>O<sub>3</sub> layers are released due to lattice relaxation. Transmission electron microscopy (TEM) for a partially relaxed sample reveals the formation of V-shaped dislocations with screw components on the sample surface, while the initial interface layer exhibits a low dislocation density, as the V-shaped dislocations do not completely extend to the epilayer/substrate interface. The variation in dislocation density in the α-(AlGa)<sub>2</sub>O<sub>3</sub> layer results in two distinct XRD peaks. The TEM observation suggests the most probable relaxation system of <span></span><math>\n <semantics>\n <mrow>\n <mrow>\n <mo>{</mo>\n <mrow>\n <mn>01</mn>\n <mover>\n <mn>1</mn>\n <mo>¯</mo>\n </mover>\n <mn>2</mn>\n </mrow>\n <mo>}</mo>\n </mrow>\n <mfrac>\n <mn>1</mn>\n <mn>3</mn>\n </mfrac>\n <mrow>\n <mo>⟨</mo>\n <mrow>\n <mn>0</mn>\n <mover>\n <mn>1</mn>\n <mo>¯</mo>\n </mover>\n <mn>11</mn>\n </mrow>\n <mo>⟩</mo>\n </mrow>\n </mrow>\n <annotation>$\\{ {01\\bar 12} \\}\\frac{1}{3}\\langle {0\\bar 111} \\rangle $</annotation>\n </semantics></math>. Scanning TEM observation for the α-Al<sub>2</sub>O<sub>3</sub>/Ga<sub>2</sub>O<sub>3</sub> superlattice structure reveals that the α-Ga<sub>2</sub>O<sub>3</sub> layers are grown in the Stranski-Krastanov (SK) mode.</p>","PeriodicalId":115,"journal":{"name":"Advanced Materials Interfaces","volume":"12 12","pages":""},"PeriodicalIF":4.4000,"publicationDate":"2025-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/admi.202500136","citationCount":"0","resultStr":"{\"title\":\"Strain Relaxation of Al-Rich α-(AlGa)2O3 and α-Al2O3/Ga2O3 Superlattice on m-Plane Sapphire Substrates by Plasma-Assisted Molecular Beam Epitaxy\",\"authors\":\"Riena Jinno, Hironori Okumura\",\"doi\":\"10.1002/admi.202500136\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>The strain relaxation of Al-rich α-(Al<i><sub>x</sub></i>Ga<sub>1-</sub><i><sub>x</sub></i>)<sub>2</sub>O<sub>3</sub> single layers with <i>x</i> > 0.6 and an α-Al<sub>2</sub>O<sub>3</sub>/Ga<sub>2</sub>O<sub>3</sub> superlattice structure grown on <i>m</i>-plane sapphire substrates by molecular beam epitaxy is investigated. Symmetrical full-width half maximum values of X-ray diffraction (XRD) omega scans are less than 400 arcsec for pseudomorphically grown α-(AlGa)<sub>2</sub>O<sub>3</sub> single layers, but increase significantly as compressive stresses in the α-(AlGa)<sub>2</sub>O<sub>3</sub> layers are released due to lattice relaxation. Transmission electron microscopy (TEM) for a partially relaxed sample reveals the formation of V-shaped dislocations with screw components on the sample surface, while the initial interface layer exhibits a low dislocation density, as the V-shaped dislocations do not completely extend to the epilayer/substrate interface. The variation in dislocation density in the α-(AlGa)<sub>2</sub>O<sub>3</sub> layer results in two distinct XRD peaks. The TEM observation suggests the most probable relaxation system of <span></span><math>\\n <semantics>\\n <mrow>\\n <mrow>\\n <mo>{</mo>\\n <mrow>\\n <mn>01</mn>\\n <mover>\\n <mn>1</mn>\\n <mo>¯</mo>\\n </mover>\\n <mn>2</mn>\\n </mrow>\\n <mo>}</mo>\\n </mrow>\\n <mfrac>\\n <mn>1</mn>\\n <mn>3</mn>\\n </mfrac>\\n <mrow>\\n <mo>⟨</mo>\\n <mrow>\\n <mn>0</mn>\\n <mover>\\n <mn>1</mn>\\n <mo>¯</mo>\\n </mover>\\n <mn>11</mn>\\n </mrow>\\n <mo>⟩</mo>\\n </mrow>\\n </mrow>\\n <annotation>$\\\\{ {01\\\\bar 12} \\\\}\\\\frac{1}{3}\\\\langle {0\\\\bar 111} \\\\rangle $</annotation>\\n </semantics></math>. Scanning TEM observation for the α-Al<sub>2</sub>O<sub>3</sub>/Ga<sub>2</sub>O<sub>3</sub> superlattice structure reveals that the α-Ga<sub>2</sub>O<sub>3</sub> layers are grown in the Stranski-Krastanov (SK) mode.</p>\",\"PeriodicalId\":115,\"journal\":{\"name\":\"Advanced Materials Interfaces\",\"volume\":\"12 12\",\"pages\":\"\"},\"PeriodicalIF\":4.4000,\"publicationDate\":\"2025-04-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://onlinelibrary.wiley.com/doi/epdf/10.1002/admi.202500136\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Advanced Materials Interfaces\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://onlinelibrary.wiley.com/doi/10.1002/admi.202500136\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"CHEMISTRY, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Materials Interfaces","FirstCategoryId":"88","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/admi.202500136","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
Strain Relaxation of Al-Rich α-(AlGa)2O3 and α-Al2O3/Ga2O3 Superlattice on m-Plane Sapphire Substrates by Plasma-Assisted Molecular Beam Epitaxy
The strain relaxation of Al-rich α-(AlxGa1-x)2O3 single layers with x > 0.6 and an α-Al2O3/Ga2O3 superlattice structure grown on m-plane sapphire substrates by molecular beam epitaxy is investigated. Symmetrical full-width half maximum values of X-ray diffraction (XRD) omega scans are less than 400 arcsec for pseudomorphically grown α-(AlGa)2O3 single layers, but increase significantly as compressive stresses in the α-(AlGa)2O3 layers are released due to lattice relaxation. Transmission electron microscopy (TEM) for a partially relaxed sample reveals the formation of V-shaped dislocations with screw components on the sample surface, while the initial interface layer exhibits a low dislocation density, as the V-shaped dislocations do not completely extend to the epilayer/substrate interface. The variation in dislocation density in the α-(AlGa)2O3 layer results in two distinct XRD peaks. The TEM observation suggests the most probable relaxation system of . Scanning TEM observation for the α-Al2O3/Ga2O3 superlattice structure reveals that the α-Ga2O3 layers are grown in the Stranski-Krastanov (SK) mode.
期刊介绍:
Advanced Materials Interfaces publishes top-level research on interface technologies and effects. Considering any interface formed between solids, liquids, and gases, the journal ensures an interdisciplinary blend of physics, chemistry, materials science, and life sciences. Advanced Materials Interfaces was launched in 2014 and received an Impact Factor of 4.834 in 2018.
The scope of Advanced Materials Interfaces is dedicated to interfaces and surfaces that play an essential role in virtually all materials and devices. Physics, chemistry, materials science and life sciences blend to encourage new, cross-pollinating ideas, which will drive forward our understanding of the processes at the interface.
Advanced Materials Interfaces covers all topics in interface-related research:
Oil / water separation,
Applications of nanostructured materials,
2D materials and heterostructures,
Surfaces and interfaces in organic electronic devices,
Catalysis and membranes,
Self-assembly and nanopatterned surfaces,
Composite and coating materials,
Biointerfaces for technical and medical applications.
Advanced Materials Interfaces provides a forum for topics on surface and interface science with a wide choice of formats: Reviews, Full Papers, and Communications, as well as Progress Reports and Research News.