Mo含量对快速热氧化法制备Mo掺杂VO2单晶金属-绝缘体转变的影响

IF 3.9 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Vacuum Pub Date : 2025-06-28 DOI:10.1016/j.vacuum.2025.114548

Fu Xie , Haiying Qi , Yiwang Zheng , Mingxi Xie , Haorong Li , Minglong Xu , Chunwang Zhao , Shikuan Sun

{"title":"Mo含量对快速热氧化法制备Mo掺杂VO2单晶金属-绝缘体转变的影响","authors":"Fu Xie , Haiying Qi , Yiwang Zheng , Mingxi Xie , Haorong Li , Minglong Xu , Chunwang Zhao , Shikuan Sun","doi":"10.1016/j.vacuum.2025.114548","DOIUrl":null,"url":null,"abstract":"<div><div>Vanadium dioxide (VO<sub>2</sub>) has demonstrated potentials for applications in sensors, actuators, intelligent windows, and devices for storing energy, owing to its unique metal-insulator transition (MIT) property at around 67 °C accompanied by a structural transition between rutile and monoclinic phases. In order to enhance its practicality at ambient temperature, Mo-doped VO<sub>2</sub> single crystals with varying Mo contents were fabricated in the present work by a facile thermal-oxidation process in air. The Mo-doped VO<sub>2</sub> single crystal exhibits a rod-shaped and hollow morphology with a rectangular cross-section. The influence of Mo doping on the phase transition behavior of Mo-doped VO<sub>2</sub> single crystals was investigated. The analysis and energy dispersion spectrum maps revealed the homogenous distribution of Mo, V, and O elements across the single crystals, confirming successful doping. High-resolution transmission electron microscopy images and electron diffraction patterns verified the single-crystal characteristic of the Mo-doped VO<sub>2</sub>. X-ray photoelectron spectroscopy indicated the presence of mixed valence states of V (V<sup>4+</sup> and V<sup>5+</sup>) and Mo<sup>6+</sup>, while differential scanning calorimetry measurements demonstrated a substantial reduction in the MIT temperature by approximately 50 °C/at% Mo, which reaches the highest decrease efficiency for metal-insulator transition temperature of element-doped VO<sub>2</sub>.</div></div>","PeriodicalId":23559,"journal":{"name":"Vacuum","volume":"240 ","pages":"Article 114548"},"PeriodicalIF":3.9000,"publicationDate":"2025-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Influence of Mo content on the metal-insulator transition of Mo-doped VO2 single crystals fabricated by fast thermal oxidation\",\"authors\":\"Fu Xie , Haiying Qi , Yiwang Zheng , Mingxi Xie , Haorong Li , Minglong Xu , Chunwang Zhao , Shikuan Sun\",\"doi\":\"10.1016/j.vacuum.2025.114548\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>Vanadium dioxide (VO<sub>2</sub>) has demonstrated potentials for applications in sensors, actuators, intelligent windows, and devices for storing energy, owing to its unique metal-insulator transition (MIT) property at around 67 °C accompanied by a structural transition between rutile and monoclinic phases. In order to enhance its practicality at ambient temperature, Mo-doped VO<sub>2</sub> single crystals with varying Mo contents were fabricated in the present work by a facile thermal-oxidation process in air. The Mo-doped VO<sub>2</sub> single crystal exhibits a rod-shaped and hollow morphology with a rectangular cross-section. The influence of Mo doping on the phase transition behavior of Mo-doped VO<sub>2</sub> single crystals was investigated. The analysis and energy dispersion spectrum maps revealed the homogenous distribution of Mo, V, and O elements across the single crystals, confirming successful doping. High-resolution transmission electron microscopy images and electron diffraction patterns verified the single-crystal characteristic of the Mo-doped VO<sub>2</sub>. X-ray photoelectron spectroscopy indicated the presence of mixed valence states of V (V<sup>4+</sup> and V<sup>5+</sup>) and Mo<sup>6+</sup>, while differential scanning calorimetry measurements demonstrated a substantial reduction in the MIT temperature by approximately 50 °C/at% Mo, which reaches the highest decrease efficiency for metal-insulator transition temperature of element-doped VO<sub>2</sub>.</div></div>\",\"PeriodicalId\":23559,\"journal\":{\"name\":\"Vacuum\",\"volume\":\"240 \",\"pages\":\"Article 114548\"},\"PeriodicalIF\":3.9000,\"publicationDate\":\"2025-06-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Vacuum\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0042207X2500538X\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Vacuum","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0042207X2500538X","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}

引用次数: 0

摘要

由于二氧化钒（VO2）在67℃左右具有独特的金属-绝缘体转变（MIT）特性，并伴有金红石相和单斜相之间的结构转变，因此在传感器、执行器、智能窗口和储能设备中具有应用潜力。为了提高其在常温下的实用性，本文采用空气热氧化法制备了不同Mo含量的掺杂VO2单晶。掺杂钼的VO2单晶呈棒状、空心、矩形截面。研究了Mo掺杂对Mo掺杂VO2单晶相变行为的影响。分析和能量色散谱图显示Mo、V和O元素在单晶上均匀分布，证实了掺杂的成功。高分辨率透射电镜图像和电子衍射图证实了掺杂mo的VO2的单晶特性。x射线光电子能谱显示了V （V4+和V5+）和Mo6+的混合价态的存在，而差示扫描量热测量表明，在% Mo时，MIT温度大幅降低了约50°C/，这是元素掺杂VO2的金属-绝缘体转变温度的最高降低效率。

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Influence of Mo content on the metal-insulator transition of Mo-doped VO2 single crystals fabricated by fast thermal oxidation

Vanadium dioxide (VO₂) has demonstrated potentials for applications in sensors, actuators, intelligent windows, and devices for storing energy, owing to its unique metal-insulator transition (MIT) property at around 67 °C accompanied by a structural transition between rutile and monoclinic phases. In order to enhance its practicality at ambient temperature, Mo-doped VO₂ single crystals with varying Mo contents were fabricated in the present work by a facile thermal-oxidation process in air. The Mo-doped VO₂ single crystal exhibits a rod-shaped and hollow morphology with a rectangular cross-section. The influence of Mo doping on the phase transition behavior of Mo-doped VO₂ single crystals was investigated. The analysis and energy dispersion spectrum maps revealed the homogenous distribution of Mo, V, and O elements across the single crystals, confirming successful doping. High-resolution transmission electron microscopy images and electron diffraction patterns verified the single-crystal characteristic of the Mo-doped VO₂. X-ray photoelectron spectroscopy indicated the presence of mixed valence states of V (V⁴⁺ and V⁵⁺) and Mo⁶⁺, while differential scanning calorimetry measurements demonstrated a substantial reduction in the MIT temperature by approximately 50 °C/at% Mo, which reaches the highest decrease efficiency for metal-insulator transition temperature of element-doped VO₂.

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来源期刊

Vacuum 工程技术-材料科学：综合

CiteScore

6.80

自引率

17.50%

发文量

审稿时长

34 days

期刊介绍： Vacuum is an international rapid publications journal with a focus on short communication. All papers are peer-reviewed, with the review process for short communication geared towards very fast turnaround times. The journal also published full research papers, thematic issues and selected papers from leading conferences. A report in Vacuum should represent a major advance in an area that involves a controlled environment at pressures of one atmosphere or below. The scope of the journal includes: 1. Vacuum; original developments in vacuum pumping and instrumentation, vacuum measurement, vacuum gas dynamics, gas-surface interactions, surface treatment for UHV applications and low outgassing, vacuum melting, sintering, and vacuum metrology. Technology and solutions for large-scale facilities (e.g., particle accelerators and fusion devices). New instrumentation ( e.g., detectors and electron microscopes). 2. Plasma science; advances in PVD, CVD, plasma-assisted CVD, ion sources, deposition processes and analysis. 3. Surface science; surface engineering, surface chemistry, surface analysis, crystal growth, ion-surface interactions and etching, nanometer-scale processing, surface modification. 4. Materials science; novel functional or structural materials. Metals, ceramics, and polymers. Experiments, simulations, and modelling for understanding structure-property relationships. Thin films and coatings. Nanostructures and ion implantation.