{"title":"用于非冷却中红外焦平面阵列成像的单片读出集成锡铅硒化纳米晶体。","authors":"Yifan Chen, Qi Wei, Shuixian Yang, Tao Zhang, Hongfei Chen, Zhihao Fu, Chao Lu, Zhengyong Liu, Yanxiong Wu, Jingshun Pan, Mingjie Li, Zhaohui Li","doi":"10.1002/adma.202504225","DOIUrl":null,"url":null,"abstract":"<p><p>The mid-infrared focal plane array (FPA) imager has developed over recent decades to become multifunctional, powerful, reliable, miniaturized, and cost-effective. However, the complexity of the refrigerated packaging process (such as dewar flask) and traditional fabrication technology (such as flip-chip) continues to contribute significantly to the high cost of industrial production. Here, a simple, low-cost, and effective type of uncooled mid-infrared FPA imager is reported through the monolithic integration of mid-infrared Pb<sub>1-x</sub>Sn<sub>x</sub>Se nanocrystals (NCs) PIN heterojunction (PbS/Pb<sub>1-x</sub>Sn<sub>x</sub>Se/ZnO) photodetectors and glass-based readout integrated circuits (ROICs). Sn-doping in PbSe NCs not only weakens the internal photocarrier-phonon coupling to reduce thermal noise but also optimizes the energy band structure of the heterojunction to enhance mid-infrared performance. Finally, the PbS/Pb<sub>0.86</sub>Sn<sub>0.14</sub>Se/ZnO heterojunction photodetector demonstrates a dark current (2.7 x 10<sup>-7</sup> A mm<sup>-2</sup> at -0.5 V), a detectivity of 7.46 × 10<sup>9</sup> Jones at a peak wavelength of 4.25 µm, air stability (retaining 96.7% performance at 300 K for 360 days) and the corresponding uncooled mid-infrared FPA (64 × 64 pixels) achieves excellent thermal sensitivity of 133 mK. These results underscore the substantial potential applications of mid-infrared FPA based on the heterojunction, including spectral imaging, gas leak detection, and chemical reagent identification.</p>","PeriodicalId":114,"journal":{"name":"Advanced Materials","volume":" ","pages":"e2504225"},"PeriodicalIF":27.4000,"publicationDate":"2025-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Tin-Lead-Selenide Nanocrystals for Sensitive Uncooled Mid-Infrared Focal Plane Array Imager with Monolithic Readout Integration.\",\"authors\":\"Yifan Chen, Qi Wei, Shuixian Yang, Tao Zhang, Hongfei Chen, Zhihao Fu, Chao Lu, Zhengyong Liu, Yanxiong Wu, Jingshun Pan, Mingjie Li, Zhaohui Li\",\"doi\":\"10.1002/adma.202504225\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p><p>The mid-infrared focal plane array (FPA) imager has developed over recent decades to become multifunctional, powerful, reliable, miniaturized, and cost-effective. However, the complexity of the refrigerated packaging process (such as dewar flask) and traditional fabrication technology (such as flip-chip) continues to contribute significantly to the high cost of industrial production. Here, a simple, low-cost, and effective type of uncooled mid-infrared FPA imager is reported through the monolithic integration of mid-infrared Pb<sub>1-x</sub>Sn<sub>x</sub>Se nanocrystals (NCs) PIN heterojunction (PbS/Pb<sub>1-x</sub>Sn<sub>x</sub>Se/ZnO) photodetectors and glass-based readout integrated circuits (ROICs). Sn-doping in PbSe NCs not only weakens the internal photocarrier-phonon coupling to reduce thermal noise but also optimizes the energy band structure of the heterojunction to enhance mid-infrared performance. Finally, the PbS/Pb<sub>0.86</sub>Sn<sub>0.14</sub>Se/ZnO heterojunction photodetector demonstrates a dark current (2.7 x 10<sup>-7</sup> A mm<sup>-2</sup> at -0.5 V), a detectivity of 7.46 × 10<sup>9</sup> Jones at a peak wavelength of 4.25 µm, air stability (retaining 96.7% performance at 300 K for 360 days) and the corresponding uncooled mid-infrared FPA (64 × 64 pixels) achieves excellent thermal sensitivity of 133 mK. These results underscore the substantial potential applications of mid-infrared FPA based on the heterojunction, including spectral imaging, gas leak detection, and chemical reagent identification.</p>\",\"PeriodicalId\":114,\"journal\":{\"name\":\"Advanced Materials\",\"volume\":\" \",\"pages\":\"e2504225\"},\"PeriodicalIF\":27.4000,\"publicationDate\":\"2025-06-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Advanced Materials\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1002/adma.202504225\",\"RegionNum\":1,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"CHEMISTRY, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Materials","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1002/adma.202504225","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
Tin-Lead-Selenide Nanocrystals for Sensitive Uncooled Mid-Infrared Focal Plane Array Imager with Monolithic Readout Integration.
The mid-infrared focal plane array (FPA) imager has developed over recent decades to become multifunctional, powerful, reliable, miniaturized, and cost-effective. However, the complexity of the refrigerated packaging process (such as dewar flask) and traditional fabrication technology (such as flip-chip) continues to contribute significantly to the high cost of industrial production. Here, a simple, low-cost, and effective type of uncooled mid-infrared FPA imager is reported through the monolithic integration of mid-infrared Pb1-xSnxSe nanocrystals (NCs) PIN heterojunction (PbS/Pb1-xSnxSe/ZnO) photodetectors and glass-based readout integrated circuits (ROICs). Sn-doping in PbSe NCs not only weakens the internal photocarrier-phonon coupling to reduce thermal noise but also optimizes the energy band structure of the heterojunction to enhance mid-infrared performance. Finally, the PbS/Pb0.86Sn0.14Se/ZnO heterojunction photodetector demonstrates a dark current (2.7 x 10-7 A mm-2 at -0.5 V), a detectivity of 7.46 × 109 Jones at a peak wavelength of 4.25 µm, air stability (retaining 96.7% performance at 300 K for 360 days) and the corresponding uncooled mid-infrared FPA (64 × 64 pixels) achieves excellent thermal sensitivity of 133 mK. These results underscore the substantial potential applications of mid-infrared FPA based on the heterojunction, including spectral imaging, gas leak detection, and chemical reagent identification.
期刊介绍:
Advanced Materials, one of the world's most prestigious journals and the foundation of the Advanced portfolio, is the home of choice for best-in-class materials science for more than 30 years. Following this fast-growing and interdisciplinary field, we are considering and publishing the most important discoveries on any and all materials from materials scientists, chemists, physicists, engineers as well as health and life scientists and bringing you the latest results and trends in modern materials-related research every week.