Current status and prospect of graphene growth by chemical vapor deposition

Graphene has attracted widespread attention since 2004 because of its outstanding physical and chemical properties. Among its various synthesis methods, chemical vapor deposition (CVD) has emerged as the dominant approach for producing high-quality grapheme films, owing to its high controllability, low cost, and scalability. This review systematically summarizes the technological development of graphene synthesis by CVD, with a focus on recent progress in key areas such as single-crystal graphene growth, surface flatness control, precise control of the number of layers, and efficient large-scale production. Studies have shown that strategies such as substrate design, proton-assisted decoupling techniques, and oxygenassisted methods have enabled the wafer-scale synthesis of single-crystal graphene with electrical properties comparable to that of mechanically exfoliated samples. However, several technical challenges remain, including direct growth on insulating substrates, high-quality synthesis at low-temperatures, and the dynamic control of defects. Looking ahead, the integration of novel carbon sources, multifunctional fabrication processes, and rollto-roll industrial production is expected to advance the practical use of graphene in fields such as flexible electronics and energy storage.

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