Constructing Stabilized Buried Interface via a Robust Molecule Bridge for High‐Performance Perovskite Photovoltaics

A benign buried interface is pivotal for significantly enhancing the performance of perovskite solar cells. However, it is challenging to ensure the integrity of the buried interface layer during perovskite film deposition. Most of the interface‐modified materials can be dissolved due to the highly polar nature of the perovskite precursor solution, thereby compromising the scalability and long‐term stability of the devices. Here, an organic molecule is introduced to modify the buried interface between SnO2 and perovskite, and demonstrated that the solubility and the functional moieties are of great significance for constructing a benign buried interface. Besides, effective chemical bridging between the SnO2 and perovskite layers endorses suppressed defects, better crystallinity, and reduced energy loss. Consequently, the best‐performing PSCs obtain a power conversion efficiency of 25.08% and excellent on‐shelf and photo‐stability (according to the ISOS stability protocols). This work provides a scalable strategy for addressing interfacial challenges and paves the way for further advancements in renewable energy technologies.