SOI电吸收调制器上III-V的模拟表征

IF 2.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Akeem Safiriyu;Amin Souleiman;Salim Faci;Anne-Laure Billabert;Catherine Algani;Joan Ramirez
{"title":"SOI电吸收调制器上III-V的模拟表征","authors":"Akeem Safiriyu;Amin Souleiman;Salim Faci;Anne-Laure Billabert;Catherine Algani;Joan Ramirez","doi":"10.1109/LPT.2025.3578407","DOIUrl":null,"url":null,"abstract":"This letter describes the analog performance of two heterogeneous integrated III-V Electro-Absorption Modulators (EAMs) on SOI with lengths of <inline-formula> <tex-math>$150~\\mathrm {\\mu m}$ </tex-math></inline-formula> and <inline-formula> <tex-math>$200~\\mathrm {\\mu m}$ </tex-math></inline-formula>. Extinction ratios of 8.7 dB and 15 dB were measured in both EAMs under 3 V reverse bias voltage, with a maximum slope efficiency of <inline-formula> <tex-math>$~1.97~\\mathrm {V^{-1}}$ </tex-math></inline-formula> in the longer EAM at 0 V. The second and third order spurious-free dynamic range of these EAMs were measured to compare how their dynamic ranges are impacted due to change in bias voltage and laser wavelength detuning.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"37 17","pages":"1013-1016"},"PeriodicalIF":2.3000,"publicationDate":"2025-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Analog Characterization of III-V on SOI Electro-Absorption Modulators\",\"authors\":\"Akeem Safiriyu;Amin Souleiman;Salim Faci;Anne-Laure Billabert;Catherine Algani;Joan Ramirez\",\"doi\":\"10.1109/LPT.2025.3578407\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This letter describes the analog performance of two heterogeneous integrated III-V Electro-Absorption Modulators (EAMs) on SOI with lengths of <inline-formula> <tex-math>$150~\\\\mathrm {\\\\mu m}$ </tex-math></inline-formula> and <inline-formula> <tex-math>$200~\\\\mathrm {\\\\mu m}$ </tex-math></inline-formula>. Extinction ratios of 8.7 dB and 15 dB were measured in both EAMs under 3 V reverse bias voltage, with a maximum slope efficiency of <inline-formula> <tex-math>$~1.97~\\\\mathrm {V^{-1}}$ </tex-math></inline-formula> in the longer EAM at 0 V. The second and third order spurious-free dynamic range of these EAMs were measured to compare how their dynamic ranges are impacted due to change in bias voltage and laser wavelength detuning.\",\"PeriodicalId\":13065,\"journal\":{\"name\":\"IEEE Photonics Technology Letters\",\"volume\":\"37 17\",\"pages\":\"1013-1016\"},\"PeriodicalIF\":2.3000,\"publicationDate\":\"2025-06-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Photonics Technology Letters\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/11029269/\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Photonics Technology Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/11029269/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

本文描述了两个异构集成III-V型电吸收调制器(eam)在SOI上的模拟性能,它们的长度分别为$150~\ mathm {\mu m}$和$200~\ mathm {\mu m}$。在反向偏置电压为3 V时,两个EAM的消光比分别为8.7 dB和15 dB,在0 V时,较长的EAM的最大斜率效率为$~1.97~\mathrm {V^{-1}}$。测量了这些eam的二阶和三阶无杂散动态范围,比较了偏置电压变化和激光波长失谐对其动态范围的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Analog Characterization of III-V on SOI Electro-Absorption Modulators
This letter describes the analog performance of two heterogeneous integrated III-V Electro-Absorption Modulators (EAMs) on SOI with lengths of $150~\mathrm {\mu m}$ and $200~\mathrm {\mu m}$ . Extinction ratios of 8.7 dB and 15 dB were measured in both EAMs under 3 V reverse bias voltage, with a maximum slope efficiency of $~1.97~\mathrm {V^{-1}}$ in the longer EAM at 0 V. The second and third order spurious-free dynamic range of these EAMs were measured to compare how their dynamic ranges are impacted due to change in bias voltage and laser wavelength detuning.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
IEEE Photonics Technology Letters
IEEE Photonics Technology Letters 工程技术-工程:电子与电气
CiteScore
5.00
自引率
3.80%
发文量
404
审稿时长
2.0 months
期刊介绍: IEEE Photonics Technology Letters addresses all aspects of the IEEE Photonics Society Constitutional Field of Interest with emphasis on photonic/lightwave components and applications, laser physics and systems and laser/electro-optics technology. Examples of subject areas for the above areas of concentration are integrated optic and optoelectronic devices, high-power laser arrays (e.g. diode, CO2), free electron lasers, solid, state lasers, laser materials'' interactions and femtosecond laser techniques. The letters journal publishes engineering, applied physics and physics oriented papers. Emphasis is on rapid publication of timely manuscripts. A goal is to provide a focal point of quality engineering-oriented papers in the electro-optics field not found in other rapid-publication journals.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信