{"title":"SOI电吸收调制器上III-V的模拟表征","authors":"Akeem Safiriyu;Amin Souleiman;Salim Faci;Anne-Laure Billabert;Catherine Algani;Joan Ramirez","doi":"10.1109/LPT.2025.3578407","DOIUrl":null,"url":null,"abstract":"This letter describes the analog performance of two heterogeneous integrated III-V Electro-Absorption Modulators (EAMs) on SOI with lengths of <inline-formula> <tex-math>$150~\\mathrm {\\mu m}$ </tex-math></inline-formula> and <inline-formula> <tex-math>$200~\\mathrm {\\mu m}$ </tex-math></inline-formula>. Extinction ratios of 8.7 dB and 15 dB were measured in both EAMs under 3 V reverse bias voltage, with a maximum slope efficiency of <inline-formula> <tex-math>$~1.97~\\mathrm {V^{-1}}$ </tex-math></inline-formula> in the longer EAM at 0 V. The second and third order spurious-free dynamic range of these EAMs were measured to compare how their dynamic ranges are impacted due to change in bias voltage and laser wavelength detuning.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"37 17","pages":"1013-1016"},"PeriodicalIF":2.3000,"publicationDate":"2025-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Analog Characterization of III-V on SOI Electro-Absorption Modulators\",\"authors\":\"Akeem Safiriyu;Amin Souleiman;Salim Faci;Anne-Laure Billabert;Catherine Algani;Joan Ramirez\",\"doi\":\"10.1109/LPT.2025.3578407\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This letter describes the analog performance of two heterogeneous integrated III-V Electro-Absorption Modulators (EAMs) on SOI with lengths of <inline-formula> <tex-math>$150~\\\\mathrm {\\\\mu m}$ </tex-math></inline-formula> and <inline-formula> <tex-math>$200~\\\\mathrm {\\\\mu m}$ </tex-math></inline-formula>. Extinction ratios of 8.7 dB and 15 dB were measured in both EAMs under 3 V reverse bias voltage, with a maximum slope efficiency of <inline-formula> <tex-math>$~1.97~\\\\mathrm {V^{-1}}$ </tex-math></inline-formula> in the longer EAM at 0 V. The second and third order spurious-free dynamic range of these EAMs were measured to compare how their dynamic ranges are impacted due to change in bias voltage and laser wavelength detuning.\",\"PeriodicalId\":13065,\"journal\":{\"name\":\"IEEE Photonics Technology Letters\",\"volume\":\"37 17\",\"pages\":\"1013-1016\"},\"PeriodicalIF\":2.3000,\"publicationDate\":\"2025-06-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Photonics Technology Letters\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/11029269/\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Photonics Technology Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/11029269/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Analog Characterization of III-V on SOI Electro-Absorption Modulators
This letter describes the analog performance of two heterogeneous integrated III-V Electro-Absorption Modulators (EAMs) on SOI with lengths of $150~\mathrm {\mu m}$ and $200~\mathrm {\mu m}$ . Extinction ratios of 8.7 dB and 15 dB were measured in both EAMs under 3 V reverse bias voltage, with a maximum slope efficiency of $~1.97~\mathrm {V^{-1}}$ in the longer EAM at 0 V. The second and third order spurious-free dynamic range of these EAMs were measured to compare how their dynamic ranges are impacted due to change in bias voltage and laser wavelength detuning.
期刊介绍:
IEEE Photonics Technology Letters addresses all aspects of the IEEE Photonics Society Constitutional Field of Interest with emphasis on photonic/lightwave components and applications, laser physics and systems and laser/electro-optics technology. Examples of subject areas for the above areas of concentration are integrated optic and optoelectronic devices, high-power laser arrays (e.g. diode, CO2), free electron lasers, solid, state lasers, laser materials'' interactions and femtosecond laser techniques. The letters journal publishes engineering, applied physics and physics oriented papers. Emphasis is on rapid publication of timely manuscripts. A goal is to provide a focal point of quality engineering-oriented papers in the electro-optics field not found in other rapid-publication journals.