{"title":"基于局域表面等离子体共振效应的高响应半金属太赫兹探测器","authors":"Rui Su;Chenwei Zhang;Binbin Hong;Faxian Xiu;Mingjun Xia","doi":"10.1109/LPT.2025.3579884","DOIUrl":null,"url":null,"abstract":"In this letter, we demonstrate a novel silicon dual microdisk Cd3As2 terahertz detector. The introduction of the silicon dual microdisk structure brings the localized surface plasmon resonance (LSPR) effect, significantly enhancing the responsivity of the semimetal terahertz detector. The fabricated Cd3As2 terahertz detector, with parameters optimized through simulation, exhibits a responsivity of 0.6791A/W under broadband terahertz irradiation spanning from 0.26THz to 0.4THz. This approach provides an innovative strategy for improving the performance of detectors in the low-frequency terahertz range and promotes the research of semimetal-based terahertz detectors.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"37 17","pages":"993-996"},"PeriodicalIF":2.3000,"publicationDate":"2025-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High-Responsivity Semimetal Terahertz Detectors Based on Localized Surface Plasmon Resonance Effect\",\"authors\":\"Rui Su;Chenwei Zhang;Binbin Hong;Faxian Xiu;Mingjun Xia\",\"doi\":\"10.1109/LPT.2025.3579884\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this letter, we demonstrate a novel silicon dual microdisk Cd3As2 terahertz detector. The introduction of the silicon dual microdisk structure brings the localized surface plasmon resonance (LSPR) effect, significantly enhancing the responsivity of the semimetal terahertz detector. The fabricated Cd3As2 terahertz detector, with parameters optimized through simulation, exhibits a responsivity of 0.6791A/W under broadband terahertz irradiation spanning from 0.26THz to 0.4THz. This approach provides an innovative strategy for improving the performance of detectors in the low-frequency terahertz range and promotes the research of semimetal-based terahertz detectors.\",\"PeriodicalId\":13065,\"journal\":{\"name\":\"IEEE Photonics Technology Letters\",\"volume\":\"37 17\",\"pages\":\"993-996\"},\"PeriodicalIF\":2.3000,\"publicationDate\":\"2025-06-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Photonics Technology Letters\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/11036759/\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Photonics Technology Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/11036759/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
High-Responsivity Semimetal Terahertz Detectors Based on Localized Surface Plasmon Resonance Effect
In this letter, we demonstrate a novel silicon dual microdisk Cd3As2 terahertz detector. The introduction of the silicon dual microdisk structure brings the localized surface plasmon resonance (LSPR) effect, significantly enhancing the responsivity of the semimetal terahertz detector. The fabricated Cd3As2 terahertz detector, with parameters optimized through simulation, exhibits a responsivity of 0.6791A/W under broadband terahertz irradiation spanning from 0.26THz to 0.4THz. This approach provides an innovative strategy for improving the performance of detectors in the low-frequency terahertz range and promotes the research of semimetal-based terahertz detectors.
期刊介绍:
IEEE Photonics Technology Letters addresses all aspects of the IEEE Photonics Society Constitutional Field of Interest with emphasis on photonic/lightwave components and applications, laser physics and systems and laser/electro-optics technology. Examples of subject areas for the above areas of concentration are integrated optic and optoelectronic devices, high-power laser arrays (e.g. diode, CO2), free electron lasers, solid, state lasers, laser materials'' interactions and femtosecond laser techniques. The letters journal publishes engineering, applied physics and physics oriented papers. Emphasis is on rapid publication of timely manuscripts. A goal is to provide a focal point of quality engineering-oriented papers in the electro-optics field not found in other rapid-publication journals.