A laboratory system for X-ray assisted device alteration (XADA)

The shift toward backside power delivery (BPD) architecture and 3D stacking of integrated circuits (ICs) introduces significant challenges for failure analysis (FA). Traditional near-infrared (NIR)-based fault isolation techniques such as Laser-Assisted Device Alteration (LADA) are rendered ineffective by NIR-blocking metallization layers. X-ray-Assisted Device Alteration (XADA) emerges as a powerful alternative, leveraging the penetrating capability of x-rays to target and alter transistor behavior. The ability of x-rays to penetrate near-infrared opaque materials is heavily exploited for non-destructive inspection of packaged parts and circuit boards. For these applications, the ability of the ionizing x-rays to alter transistor characteristics is undesirable. Recently, however, the intentional exploitation of these ionizing effects for targeted device alteration using a micro-focused, scanning x-ray beam, analogous to LADA, has been explored. This paper provides an expanded analysis of XADA, introducing advancements in x-ray source design, focusing optics, and experimental methodologies. Additionally, system-level innovations, including high-precision navigation and co-axial optical setups, position XADA as a transformative tool for FA of BPD-era ICs.