低缺陷和高电子迁移寿命产品的CdZnTe晶体

IF 1.9 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Nuclear Science Pub Date : 2025-04-29 DOI:10.1109/TNS.2025.3565234

Song Zhang;Hui Zhang

{"title":"低缺陷和高电子迁移寿命产品的CdZnTe晶体","authors":"Song Zhang;Hui Zhang","doi":"10.1109/TNS.2025.3565234","DOIUrl":null,"url":null,"abstract":"A 3-in CdZnTe ingot with a large single-crystal volume was grown with a self-developed traveling heater method (THM) furnace and process. Observations by infrared (IR) transmission microscopy revealed that Te inclusions within the crystal were maintained below <inline-formula> <tex-math>$5~\\mu $ </tex-math></inline-formula>m with a quite low density. A <inline-formula> <tex-math>$5\\times 5\\times 1.26$ </tex-math></inline-formula> mm planar detector fabricated with CdZnTe crystal exhibited a leakage current of 10.63 nA under a bias voltage of 1000 V, indicating excellent working voltage. The energy resolution of the planar detector reached 5.65% at 241Am@59.5 keV, and its <inline-formula> <tex-math>$\\mu _{\\text {e}}\\tau _{\\text {e}}$ </tex-math></inline-formula> was calculated to be <inline-formula> <tex-math>$5.90\\times 10^{-3}$ </tex-math></inline-formula> cm2/V. A <inline-formula> <tex-math>$4\\times 4$ </tex-math></inline-formula> pixelated detector was also fabricated using a <inline-formula> <tex-math>$5\\times 5\\times 1$ </tex-math></inline-formula> mm crystal, the central four pixels of which achieved energy resolutions of 4.91%, 4.52%, 4.82%, and 4.88%, exhibiting quite good uniformity.","PeriodicalId":13406,"journal":{"name":"IEEE Transactions on Nuclear Science","volume":"72 6","pages":"1969-1972"},"PeriodicalIF":1.9000,"publicationDate":"2025-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"CdZnTe Crystals With Low Defects and High Electron Mobility-Lifetime Product\",\"authors\":\"Song Zhang;Hui Zhang\",\"doi\":\"10.1109/TNS.2025.3565234\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 3-in CdZnTe ingot with a large single-crystal volume was grown with a self-developed traveling heater method (THM) furnace and process. Observations by infrared (IR) transmission microscopy revealed that Te inclusions within the crystal were maintained below <inline-formula> <tex-math>$5~\\\\mu $ </tex-math></inline-formula>m with a quite low density. A <inline-formula> <tex-math>$5\\\\times 5\\\\times 1.26$ </tex-math></inline-formula> mm planar detector fabricated with CdZnTe crystal exhibited a leakage current of 10.63 nA under a bias voltage of 1000 V, indicating excellent working voltage. The energy resolution of the planar detector reached 5.65% at 241Am@59.5 keV, and its <inline-formula> <tex-math>$\\\\mu _{\\\\text {e}}\\\\tau _{\\\\text {e}}$ </tex-math></inline-formula> was calculated to be <inline-formula> <tex-math>$5.90\\\\times 10^{-3}$ </tex-math></inline-formula> cm2/V. A <inline-formula> <tex-math>$4\\\\times 4$ </tex-math></inline-formula> pixelated detector was also fabricated using a <inline-formula> <tex-math>$5\\\\times 5\\\\times 1$ </tex-math></inline-formula> mm crystal, the central four pixels of which achieved energy resolutions of 4.91%, 4.52%, 4.82%, and 4.88%, exhibiting quite good uniformity.\",\"PeriodicalId\":13406,\"journal\":{\"name\":\"IEEE Transactions on Nuclear Science\",\"volume\":\"72 6\",\"pages\":\"1969-1972\"},\"PeriodicalIF\":1.9000,\"publicationDate\":\"2025-04-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Nuclear Science\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10980139/\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Nuclear Science","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10980139/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

摘要

采用自行研制的移动加热法（THM）炉和工艺，制备了一种具有大单晶体积的3英寸CdZnTe铸锭。红外透射显微镜观察发现，晶体内的Te夹杂物保持在$5~\mu $ m以下，密度很低。用CdZnTe晶体制备的$5\times 5\times 1.26$ mm平面探测器在1000 V偏置电压下漏电流为10.63 nA，工作电压优良。平面探测器的能量分辨率达到5.65% at 241Am@59.5 keV, and its $\mu _{\text {e}}\tau _{\text {e}}$ was calculated to be $5.90\times 10^{-3}$ cm2/V. A $4\times 4$ pixelated detector was also fabricated using a $5\times 5\times 1$ mm crystal, the central four pixels of which achieved energy resolutions of 4.91%, 4.52%, 4.82%, and 4.88%, exhibiting quite good uniformity.

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

CdZnTe Crystals With Low Defects and High Electron Mobility-Lifetime Product

A 3-in CdZnTe ingot with a large single-crystal volume was grown with a self-developed traveling heater method (THM) furnace and process. Observations by infrared (IR) transmission microscopy revealed that Te inclusions within the crystal were maintained below

$5~\mu $

m with a quite low density. A

$5\times 5\times 1.26$

mm planar detector fabricated with CdZnTe crystal exhibited a leakage current of 10.63 nA under a bias voltage of 1000 V, indicating excellent working voltage. The energy resolution of the planar detector reached 5.65% at 241Am@59.5 keV, and its

$\mu _{\text {e}}\tau _{\text {e}}$

was calculated to be

$5.90\times 10^{-3}$

cm2/V. A

$4\times 4$

pixelated detector was also fabricated using a

$5\times 5\times 1$

mm crystal, the central four pixels of which achieved energy resolutions of 4.91%, 4.52%, 4.82%, and 4.88%, exhibiting quite good uniformity.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

IEEE Transactions on Nuclear Science 工程技术-工程：电子与电气

CiteScore

3.70

自引率

27.80%

发文量

314

审稿时长

6.2 months

期刊介绍： The IEEE Transactions on Nuclear Science is a publication of the IEEE Nuclear and Plasma Sciences Society. It is viewed as the primary source of technical information in many of the areas it covers. As judged by JCR impact factor, TNS consistently ranks in the top five journals in the category of Nuclear Science & Technology. It has one of the higher immediacy indices, indicating that the information it publishes is viewed as timely, and has a relatively long citation half-life, indicating that the published information also is viewed as valuable for a number of years. The IEEE Transactions on Nuclear Science is published bimonthly. Its scope includes all aspects of the theory and application of nuclear science and engineering. It focuses on instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.