{"title":"未掺杂GaN中的红色发光带","authors":"Michael A. Reshchikov","doi":"10.1016/j.jlumin.2025.121370","DOIUrl":null,"url":null,"abstract":"<div><div>Photoluminescence (PL) from undoped GaN grown by molecular beam epitaxy in extremely Ga-rich conditions shows a bright red band with a maximum at 1.7–1.8 eV, named the RL2 band. The PL lifetime of this band decreases by more than two orders of magnitude with increasing temperature from 17 to 100 K. In contrast, steady-state PL intensity remains unchanged in this temperature region. A model of transitions is proposed with two excited states close to the conduction band and the ground state of the deep donor at about 1 eV above the valence band. The donor is identified as a complex defect containing a nitrogen vacancy and an unknown acceptor impurity.</div></div>","PeriodicalId":16159,"journal":{"name":"Journal of Luminescence","volume":"286 ","pages":"Article 121370"},"PeriodicalIF":3.6000,"publicationDate":"2025-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Red luminescence band in undoped GaN\",\"authors\":\"Michael A. Reshchikov\",\"doi\":\"10.1016/j.jlumin.2025.121370\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>Photoluminescence (PL) from undoped GaN grown by molecular beam epitaxy in extremely Ga-rich conditions shows a bright red band with a maximum at 1.7–1.8 eV, named the RL2 band. The PL lifetime of this band decreases by more than two orders of magnitude with increasing temperature from 17 to 100 K. In contrast, steady-state PL intensity remains unchanged in this temperature region. A model of transitions is proposed with two excited states close to the conduction band and the ground state of the deep donor at about 1 eV above the valence band. The donor is identified as a complex defect containing a nitrogen vacancy and an unknown acceptor impurity.</div></div>\",\"PeriodicalId\":16159,\"journal\":{\"name\":\"Journal of Luminescence\",\"volume\":\"286 \",\"pages\":\"Article 121370\"},\"PeriodicalIF\":3.6000,\"publicationDate\":\"2025-06-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Luminescence\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0022231325003102\",\"RegionNum\":3,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"OPTICS\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Luminescence","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0022231325003102","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"OPTICS","Score":null,"Total":0}
Photoluminescence (PL) from undoped GaN grown by molecular beam epitaxy in extremely Ga-rich conditions shows a bright red band with a maximum at 1.7–1.8 eV, named the RL2 band. The PL lifetime of this band decreases by more than two orders of magnitude with increasing temperature from 17 to 100 K. In contrast, steady-state PL intensity remains unchanged in this temperature region. A model of transitions is proposed with two excited states close to the conduction band and the ground state of the deep donor at about 1 eV above the valence band. The donor is identified as a complex defect containing a nitrogen vacancy and an unknown acceptor impurity.
期刊介绍:
The purpose of the Journal of Luminescence is to provide a means of communication between scientists in different disciplines who share a common interest in the electronic excited states of molecular, ionic and covalent systems, whether crystalline, amorphous, or liquid.
We invite original papers and reviews on such subjects as: exciton and polariton dynamics, dynamics of localized excited states, energy and charge transport in ordered and disordered systems, radiative and non-radiative recombination, relaxation processes, vibronic interactions in electronic excited states, photochemistry in condensed systems, excited state resonance, double resonance, spin dynamics, selective excitation spectroscopy, hole burning, coherent processes in excited states, (e.g. coherent optical transients, photon echoes, transient gratings), multiphoton processes, optical bistability, photochromism, and new techniques for the study of excited states. This list is not intended to be exhaustive. Papers in the traditional areas of optical spectroscopy (absorption, MCD, luminescence, Raman scattering) are welcome. Papers on applications (phosphors, scintillators, electro- and cathodo-luminescence, radiography, bioimaging, solar energy, energy conversion, etc.) are also welcome if they present results of scientific, rather than only technological interest. However, papers containing purely theoretical results, not related to phenomena in the excited states, as well as papers using luminescence spectroscopy to perform routine analytical chemistry or biochemistry procedures, are outside the scope of the journal. Some exceptions will be possible at the discretion of the editors.