基于气隙结构的In(Ga)As量子点单光子源设计与优化

IF 4.6 3区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Materials Science and Engineering: B Pub Date : 2025-06-19 DOI:10.1016/j.mseb.2025.118530

Xiaoyang Zhao , Yidi Bao , Xiaoling Chen , Chunxue Ji , Wen Liu , Xiaodong Wang

{"title":"基于气隙结构的In(Ga)As量子点单光子源设计与优化","authors":"Xiaoyang Zhao , Yidi Bao , Xiaoling Chen , Chunxue Ji , Wen Liu , Xiaodong Wang","doi":"10.1016/j.mseb.2025.118530","DOIUrl":null,"url":null,"abstract":"<div><div>In order to enhance the light extraction efficiency of semiconductor quantum dot single photon sources, we have innovatively designed an In(Ga)As quantum dot single photon source with air gap structure. By introducing circular air gap in the structure of the hemispherical microlens coupled with the gold mirror, the light extraction efficiency and extraction bandwidth of the single-photon source are significantly improved. Results show that the device improves the light extraction efficiency by approximately 17 % at numerical aperture of 0.6. Further optimization of the structural parameters shows that the air gap single photon source obtains maximum light extraction efficiency of 72 % at 930 nm and high extraction bandwidth of 60 nm. In addition, the design has a good tolerance for geometric errors and is able to maintain a high optical extraction efficiency within large geometric errors, which is very favorable for device fabrication.</div></div>","PeriodicalId":18233,"journal":{"name":"Materials Science and Engineering: B","volume":"321 ","pages":"Article 118530"},"PeriodicalIF":4.6000,"publicationDate":"2025-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Design and optimization of In(Ga)As quantum dot single photon source based on air gap structure\",\"authors\":\"Xiaoyang Zhao , Yidi Bao , Xiaoling Chen , Chunxue Ji , Wen Liu , Xiaodong Wang\",\"doi\":\"10.1016/j.mseb.2025.118530\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>In order to enhance the light extraction efficiency of semiconductor quantum dot single photon sources, we have innovatively designed an In(Ga)As quantum dot single photon source with air gap structure. By introducing circular air gap in the structure of the hemispherical microlens coupled with the gold mirror, the light extraction efficiency and extraction bandwidth of the single-photon source are significantly improved. Results show that the device improves the light extraction efficiency by approximately 17 % at numerical aperture of 0.6. Further optimization of the structural parameters shows that the air gap single photon source obtains maximum light extraction efficiency of 72 % at 930 nm and high extraction bandwidth of 60 nm. In addition, the design has a good tolerance for geometric errors and is able to maintain a high optical extraction efficiency within large geometric errors, which is very favorable for device fabrication.</div></div>\",\"PeriodicalId\":18233,\"journal\":{\"name\":\"Materials Science and Engineering: B\",\"volume\":\"321 \",\"pages\":\"Article 118530\"},\"PeriodicalIF\":4.6000,\"publicationDate\":\"2025-06-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Materials Science and Engineering: B\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0921510725005549\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science and Engineering: B","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0921510725005549","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}

引用次数: 0

摘要

为了提高半导体量子点单光子源的光提取效率，我们创新性地设计了一种具有气隙结构的In(Ga)As量子点单光子源。通过在与金反射镜耦合的半球面微透镜结构中引入圆形气隙，可以显著提高单光子源的光提取效率和提取带宽。结果表明，该装置在数值孔径为0.6时，光提取效率提高了约17%。进一步优化结构参数表明，气隙单光子源在930 nm处的光提取效率最高，达到72%，提取带宽高达60 nm。此外，该设计具有良好的几何误差容忍度，能够在较大的几何误差范围内保持较高的光提取效率，这对器件制造非常有利。

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Design and optimization of In(Ga)As quantum dot single photon source based on air gap structure

In order to enhance the light extraction efficiency of semiconductor quantum dot single photon sources, we have innovatively designed an In(Ga)As quantum dot single photon source with air gap structure. By introducing circular air gap in the structure of the hemispherical microlens coupled with the gold mirror, the light extraction efficiency and extraction bandwidth of the single-photon source are significantly improved. Results show that the device improves the light extraction efficiency by approximately 17 % at numerical aperture of 0.6. Further optimization of the structural parameters shows that the air gap single photon source obtains maximum light extraction efficiency of 72 % at 930 nm and high extraction bandwidth of 60 nm. In addition, the design has a good tolerance for geometric errors and is able to maintain a high optical extraction efficiency within large geometric errors, which is very favorable for device fabrication.

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来源期刊

Materials Science and Engineering: B 工程技术-材料科学：综合

CiteScore

5.60

自引率

2.80%

发文量

481

审稿时长

3.5 months

期刊介绍： The journal provides an international medium for the publication of theoretical and experimental studies and reviews related to the electronic, electrochemical, ionic, magnetic, optical, and biosensing properties of solid state materials in bulk, thin film and particulate forms. Papers dealing with synthesis, processing, characterization, structure, physical properties and computational aspects of nano-crystalline, crystalline, amorphous and glassy forms of ceramics, semiconductors, layered insertion compounds, low-dimensional compounds and systems, fast-ion conductors, polymers and dielectrics are viewed as suitable for publication. Articles focused on nano-structured aspects of these advanced solid-state materials will also be considered suitable.