Ultra-high photosensitivity response in MIS SBDs enabled by Zn-integrated ZrO2@Zn interfacial layers for photovoltaic device

Highly uniform spherical ZrO₂@Zn thin films were successfully deposited using the Jet Nebulizer Spray Pyrolysis (JNSP) technique at various Zn concentrations of 3,6, and 9 wt%). The influence of Zn concentration on the crystallite growth of ZrO₂@Zn films was analysed through XRD, UV, FE-SEM, EDAX, XPS, and I-V characterizations. XRD confirmed cubic fluorite crystallites with a preferred (111) orientation, where Zn doping influenced crystallinity, grain size, texture coefficient, microstrain and dislocation density. The average crystallite size was determined to be 13.11nm. Optical studies revealed that the transmittance decreased with Zn concentration up to 9 wt%, attributed to Zn–O bonding, while the reduced bandgap (E_g) was 3.62 eV in films. FE-SEM confirmed the presence of large spherical particles at 9 wt% Zn. EDAX confirms the presence of expected elements of Zr, Zn and O. XPS validated the presence of Zr⁴⁺, Zn²⁺ and O^2- ions, aligning with the thin film at 9 wt%. I-V characteristics exhibited the rectifying nature of Cu/ZrO₂@Zn/n-Si MIS SBDs under illumination, showing a decreased (n=1.69) and then increased (Φ_B=0.81 eV) in 9 wt% of Zn concentration. Significant enhancements in photosensitivity (10,151.51 %) and detectivity (1.17×10⁹Jones) demonstrate the high potential of Cu/ZrO₂@Zn/n-Si MIS diodes for advanced photovoltaic devices and photodetector applications.