双极性和光电应用中p型掺钠ZnS纳米晶薄膜的厚度依赖性研究

IF 2.8 3区物理与天体物理 Q2 PHYSICS, CONDENSED MATTER

Physica B-condensed Matter Pub Date : 2025-06-16 DOI:10.1016/j.physb.2025.417498

Rajeshkumar P. Khatri , Amitkumar J. Patel , Dipakkumar H. Sahay , Maheshkumar K. Patel , Vanaraj Solanki , Pratik M. Gadhavi

{"title":"双极性和光电应用中p型掺钠ZnS纳米晶薄膜的厚度依赖性研究","authors":"Rajeshkumar P. Khatri , Amitkumar J. Patel , Dipakkumar H. Sahay , Maheshkumar K. Patel , Vanaraj Solanki , Pratik M. Gadhavi","doi":"10.1016/j.physb.2025.417498","DOIUrl":null,"url":null,"abstract":"<div><div>Sodium-doped Zinc Sulfide (Na:ZnS) nano-crystalline films of varied thicknesses were successfully grown on silica substrates via a colloid-based growth technique. Film thickness was controlled by adjusting the number of coats (3–6). The obtained Na:ZnS films exhibited hole-dominated conductivity, demonstrating potential for ambipolar and optronics applications. X-ray diffraction confirmed a multicrystalline cubic sphalerite phase, while SEM imaging revealed randomly oriented spherical grains with increased compactness at higher thicknesses. UV–Vis spectroscopy indicated a redshift in the band gap with increasing thickness, and PL spectra showed 480 nm emission peak attributed to Na-induced defect levels. Electrical measurements revealed resistivity, charge carrier density and mobility in the range of (1.91–7.54) × 102 Ω·cm, (1.02–2.70) × 1015 cm−3 and (8.2–12.1) cm2/V·s, respectively. Notably, the Na:ZnS-6 film exhibited the lowest resistivity 1.91 × 102 (Ω·cm), the highest conductivity of 5.23 × 10−3 (Ω−1·cm−1), and mobility of 12.1 (cm2/V·s).</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"714 ","pages":"Article 417498"},"PeriodicalIF":2.8000,"publicationDate":"2025-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Thickness dependent studies of colloidally grown p-type Na-doped ZnS nano-crystalline films for ambipolar and optronic applications\",\"authors\":\"Rajeshkumar P. Khatri , Amitkumar J. Patel , Dipakkumar H. Sahay , Maheshkumar K. Patel , Vanaraj Solanki , Pratik M. Gadhavi\",\"doi\":\"10.1016/j.physb.2025.417498\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>Sodium-doped Zinc Sulfide (Na:ZnS) nano-crystalline films of varied thicknesses were successfully grown on silica substrates via a colloid-based growth technique. Film thickness was controlled by adjusting the number of coats (3–6). The obtained Na:ZnS films exhibited hole-dominated conductivity, demonstrating potential for ambipolar and optronics applications. X-ray diffraction confirmed a multicrystalline cubic sphalerite phase, while SEM imaging revealed randomly oriented spherical grains with increased compactness at higher thicknesses. UV–Vis spectroscopy indicated a redshift in the band gap with increasing thickness, and PL spectra showed 480 nm emission peak attributed to Na-induced defect levels. Electrical measurements revealed resistivity, charge carrier density and mobility in the range of (1.91–7.54) × 102 Ω·cm, (1.02–2.70) × 1015 cm−3 and (8.2–12.1) cm2/V·s, respectively. Notably, the Na:ZnS-6 film exhibited the lowest resistivity 1.91 × 102 (Ω·cm), the highest conductivity of 5.23 × 10−3 (Ω−1·cm−1), and mobility of 12.1 (cm2/V·s).</div></div>\",\"PeriodicalId\":20116,\"journal\":{\"name\":\"Physica B-condensed Matter\",\"volume\":\"714 \",\"pages\":\"Article 417498\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2025-06-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Physica B-condensed Matter\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0921452625006155\",\"RegionNum\":3,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"PHYSICS, CONDENSED MATTER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Physica B-condensed Matter","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0921452625006155","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}

引用次数: 0

摘要

采用胶体基生长技术，成功地在二氧化硅衬底上生长出了不同厚度的钠掺杂硫化锌（Na:ZnS）纳米晶膜。通过调整涂膜次数（3-6）来控制膜厚。获得的Na:ZnS薄膜具有空穴主导的导电性，具有双极性和光电应用的潜力。x射线衍射证实了多晶立方闪锌矿相，而扫描电镜成像显示了随机取向的球形颗粒，随着厚度的增加，致密性增加。紫外可见光谱显示，随着厚度的增加，带隙出现了红移，PL光谱显示480 nm的发射峰，这是由于na诱导的缺陷水平。电阻率、载流子密度和迁移率分别为（1.91 ~ 7.54）× 102 Ω·cm、（1.02 ~ 2.70）× 1015 cm−3和（8.2 ~ 12.1）cm2/V·s。值得注意的是，Na:ZnS-6薄膜的电阻率最低为1.91 × 102 （Ω·cm），电导率最高为5.23 × 10−3 （Ω−1·cm−1），迁移率为12.1 （cm2/V·s）。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Thickness dependent studies of colloidally grown p-type Na-doped ZnS nano-crystalline films for ambipolar and optronic applications

Sodium-doped Zinc Sulfide (Na:ZnS) nano-crystalline films of varied thicknesses were successfully grown on silica substrates via a colloid-based growth technique. Film thickness was controlled by adjusting the number of coats (3–6). The obtained Na:ZnS films exhibited hole-dominated conductivity, demonstrating potential for ambipolar and optronics applications. X-ray diffraction confirmed a multicrystalline cubic sphalerite phase, while SEM imaging revealed randomly oriented spherical grains with increased compactness at higher thicknesses. UV–Vis spectroscopy indicated a redshift in the band gap with increasing thickness, and PL spectra showed 480 nm emission peak attributed to Na-induced defect levels. Electrical measurements revealed resistivity, charge carrier density and mobility in the range of (1.91–7.54) × 10² Ω·cm, (1.02–2.70) × 10¹⁵ cm⁻³ and (8.2–12.1) cm²/V·s, respectively. Notably, the Na:ZnS-6 film exhibited the lowest resistivity 1.91 × 10² (Ω·cm), the highest conductivity of 5.23 × 10⁻³ (Ω⁻¹·cm⁻¹), and mobility of 12.1 (cm²/V·s).

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Physica B-condensed Matter 物理-物理：凝聚态物理

CiteScore

4.90

自引率

7.10%

发文量

703

审稿时长

44 days

期刊介绍： Physica B: Condensed Matter comprises all condensed matter and material physics that involve theoretical, computational and experimental work. Papers should contain further developments and a proper discussion on the physics of experimental or theoretical results in one of the following areas: -Magnetism -Materials physics -Nanostructures and nanomaterials -Optics and optical materials -Quantum materials -Semiconductors -Strongly correlated systems -Superconductivity -Surfaces and interfaces