ditBuC6-BTBT的多晶筛选及电荷输运研究

IF 3.2 2区 化学 Q2 CHEMISTRY, MULTIDISCIPLINARY
Priya Pandey, Federico Modesti, Nemo McIntosh, Christian Ruzié, Nicholas Turetta, Lamiaa Fijahi, Massimiliano Remigio, Guillaume Schweicher, Yves Henri Geerts, Marta Mas-Torrent, Peter Erk, Jérôme Cornil, Paolo Samorì, Enrico Modena* and Lucia Maini*, 
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引用次数: 0

摘要

在本研究中,我们研究了基于新型分子半导体,即2,7-双(7,7-二甲基辛基)苯并[b]苯并[4,5]噻吩[2,3-d]噻吩(ditBuC6-BTBT)制备的有机场效应晶体管(ofet)的多态性和晶体学参数与电荷输运性质之间的关系。发现了四种ditbuc6 - tbbt的多态性:三种在室温下观察到(形式I, Ia和II),一种在100 °C以上出现(形式III)。虽然测量了所有形式的细胞参数,但仅确定了形式Ia和II的完整晶体结构。虽然目前的研究还不能确定分子堆积与电荷输运性质之间的直接关系,但对多晶型的结构分析有助于更广泛地了解ditBuC6-BTBT的堆积基序。对粉末模式的微小差异进行细致的检查证实了亚稳态形式I和形式Ia的存在,由于无意中播种了热力学稳定的形式II,它们变得更加难以分离。利用热梯度和棒辅助半月板剪切法的非平衡结晶技术进行了探索,以加强对多晶型选择的控制。通过计算转移积分,研究了边界轨道重叠所决定的本征电荷输运性质。通过溶液剪切和真空蒸发沉积薄膜制备的优化器件的场效应迁移率在约0.05 cm2 V-1 s-1的线性范围内。观察到的器件性能被解释为晶体封装特性、电离电位值和多晶共存的综合影响的结果,突出了在获得清晰的结构-性能相关性方面的挑战,以及用这种材料实现高性能有机电子器件的复杂性。一种新型BTBT衍生物(ditBuC6-BTBT)的多晶筛选和OFET制备揭示了分子设计和多晶控制如何影响有机半导体中的电荷输运。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Polymorph Screening and Investigation of Charge Transport of ditBuC6-BTBT

In this study, we investigate the relationship between the polymorphism and crystallographic parameters and the charge transport properties achieved through the fabrication of organic field-effect transistors (OFETs) based on a novel molecular semiconductor, i.e., 2,7-bis(7,7-dimethyloctyl)benzo[b]benzo[4,5]thieno[2,3-d]thiophene (ditBuC6-BTBT). Four polymorphs of ditBuC6-BTBT were identified: three observed at room temperature (Forms I, Ia, and II), and one appearing above 100 °C (Form III). While cell parameters were measured for all forms, full crystal structures were determined only for Forms Ia and II. Although a direct correlation between molecular packing and charge transport properties could not be established from the present study, the structural analysis of the polymorphs contributes to a broader understanding of the packing motifs in ditBuC6-BTBT. A meticulous examination of the minute discrepancies in the powder patterns substantiated the existence of both the metastable Form I and Form Ia, which became more difficult to isolate due to unintentional seeding of the thermodynamically stable Form II. Nonequilibrium crystallization techniques utilizing thermal gradient and bar-assisted meniscus shearing methods were explored to enhance control over polymorph selection. The intrinsic charge transport properties ruled by the overlap of the frontier orbitals were studied by computing the transfer integrals. Optimized devices fabricated by depositing thin films by solution shearing and vacuum evaporation led to field-effect mobility in the linear regime of ca. 0.05 cm2 V–1 s–1. The observed device performances were interpreted as a result of the combined effects of crystal packing features, ionization potential values, and polymorphic coexistence, highlighting the challenges in deriving clear structure–property correlations and underscoring the complexities in achieving high-performance organic electronics with this material.

Polymorph screening and OFET fabrication of a novel BTBT derivative (ditBuC6-BTBT) reveal how molecular design and polymorphic control impact charge transport in organic semiconductors.

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来源期刊
Crystal Growth & Design
Crystal Growth & Design 化学-材料科学:综合
CiteScore
6.30
自引率
10.50%
发文量
650
审稿时长
1.9 months
期刊介绍: The aim of Crystal Growth & Design is to stimulate crossfertilization of knowledge among scientists and engineers working in the fields of crystal growth, crystal engineering, and the industrial application of crystalline materials. Crystal Growth & Design publishes theoretical and experimental studies of the physical, chemical, and biological phenomena and processes related to the design, growth, and application of crystalline materials. Synergistic approaches originating from different disciplines and technologies and integrating the fields of crystal growth, crystal engineering, intermolecular interactions, and industrial application are encouraged.
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