高能效尖峰神经网络无源记忆电阻阵列中复位优势精确突触权映射

IF 16.8 1区 材料科学 Q1 CHEMISTRY, PHYSICAL
Yongjin Byun , Gimun Kim , Sungjoon Kim , Sungjun Kim
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引用次数: 0

摘要

本研究提出了一种新的复位优势突触权重规划策略,用于无源忆阻交叉栅阵列,实现高精度的神经形态计算,无需外部电流顺应电路。我们在Pt/Al/TiOx/Al₂O₃/Pt器件堆栈中引入了一个自然形成的超调抑制层(OSL),它在设定过程中本质上限制了超调电流,并允许稳定的模拟开关。结合半偏置编程方案,这种结构显著抑制了细胞间干扰,这是高密度忆阻器阵列的一个关键挑战。为了进一步提高权重精度,我们提出了初始-低电阻状态(LRS)方案,这是一种复位主导的规划方法,可以最大限度地减少由设定脉冲引起的突然电导变化。使用增量步进脉冲验证算法(ISPVA),我们成功地编程了20个离散电导电平,平均矢量矩阵乘法(VMM)误差为419.8 nA。值得注意的是,99%的权重在1.5µa的误差范围内,证明了我们方法的高精度。系统级验证通过基于硬件的推理,使用在MNIST数据集上训练的峰值神经网络(SNN)进行,实现了88.85%的分类准确率,仅比理想的软件基线低1.7%。这项工作强调了一种可扩展和cmos兼容的解决方案,用于在无源忆阻器阵列中实现精确、节能的VMM,为下一代神经形态硬件提供了强大的潜力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Reset-dominant accurate synaptic weight mapping in passive memristor arrays for energy-efficient spiking neural networks

Reset-dominant accurate synaptic weight mapping in passive memristor arrays for energy-efficient spiking neural networks
This study presents a novel reset-dominant synaptic weight programming strategy for passive memristor crossbar arrays, enabling high-precision neuromorphic computing without external current compliance circuitry. We introduce a naturally formed Overshoot Suppression Layer (OSL) within a Pt/Al/TiOx/Al₂O₃/Pt device stack, which intrinsically limits overshoot current during the set process and allows for stable analog switching. Combined with a half-bias programming scheme, this structure significantly suppresses cell-to-cell interference, a critical challenge in high-density memristor arrays. To further enhance weight accuracy, we propose the Initial-Low Resistance State (LRS) scheme, a reset-dominant programming method that minimizes abrupt conductance variation induced by set pulses. Using an incremental step pulse with verification algorithm (ISPVA), we successfully programmed 20 discrete conductance levels with a mean vector-matrix multiplication (VMM) error of 419.8 nA. Notably, 99 % of the weights fell within a 1.5 µA error margin, demonstrating the high precision of our approach. System-level validation was conducted through hardware-based inference using a spiking neural network (SNN) trained on the MNIST dataset, achieving a classification accuracy of 88.85 %, only 1.7 % below the ideal software baseline. This work highlights a scalable and CMOS-compatible solution for achieving accurate, energy-efficient VMM in passive memristor arrays, offering strong potential for next-generation neuromorphic hardware.
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来源期刊
Nano Energy
Nano Energy CHEMISTRY, PHYSICAL-NANOSCIENCE & NANOTECHNOLOGY
CiteScore
30.30
自引率
7.40%
发文量
1207
审稿时长
23 days
期刊介绍: Nano Energy is a multidisciplinary, rapid-publication forum of original peer-reviewed contributions on the science and engineering of nanomaterials and nanodevices used in all forms of energy harvesting, conversion, storage, utilization and policy. Through its mixture of articles, reviews, communications, research news, and information on key developments, Nano Energy provides a comprehensive coverage of this exciting and dynamic field which joins nanoscience and nanotechnology with energy science. The journal is relevant to all those who are interested in nanomaterials solutions to the energy problem. Nano Energy publishes original experimental and theoretical research on all aspects of energy-related research which utilizes nanomaterials and nanotechnology. Manuscripts of four types are considered: review articles which inform readers of the latest research and advances in energy science; rapid communications which feature exciting research breakthroughs in the field; full-length articles which report comprehensive research developments; and news and opinions which comment on topical issues or express views on the developments in related fields.
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