β -Ga2O3肖特基势垒二极管中大气中子诱导的单事件燃尽

IF 3.6 2区物理与天体物理 Q2 PHYSICS, APPLIED

Applied Physics Letters Pub Date : 2025-06-16 DOI:10.1063/5.0273065

Xing Li, Weibo Jiang, Xing Zeng, Yuangang Wang, Chao Peng, Hong Zhang, Xiaoning Zhang, Xi Liang, Zhangang Zhang, Zhifeng Lei, Jia-Yue Yang, Teng Ma

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引用次数: 0

摘要

本文研究了大气中子辐照下β-Ga2O3肖特基势垒二极管（SBD）的单事件燃尽（SEB）效应，包括其降解模式和物理机制。实验结果表明，反向偏置电压是影响β-Ga2O3 SBD器件SEB失效的关键因素。当UR达到600 V时，SEB发生故障，其特征是在大气中子辐照过程中突然丧失电压阻断能力。发射显微镜和扫描电镜分析表明，SEB事件发生在肖特基结的边缘，受损区域形成一个近似椭圆形的熔融“空洞”。Geant 4和TCAD模拟结果表明，二次离子（如Cr）的入射会导致器件内部晶格温度升高，并且随着UR的增加，晶格最高温度升高。当UR足够高时，局部晶格温度达到Ga2O3材料的熔点，最终导致SEB失效。该研究为基于ga2o3的功率器件在航空航天领域的应用提供了有价值的理论支持。

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Atmospheric neutron-induced single-event burnout in β -Ga2O3 Schottky barrier diode

This paper investigates the single-event burnout (SEB) effect of β-Ga2O3 Schottky barrier diode (SBD) under atmospheric neutron irradiation, including the degradation modes and physical mechanisms. The experimental results indicate that the reverse bias voltage (UR) is a critical factor influencing SEB failure of β-Ga2O3 SBD devices. When UR reaches 600 V, SEB failure occurs, characterized as a sudden loss of voltage-blocking capability during atmospheric neutron irradiation. The Emission Microscope and Scanning Electron Microscopy analysis reveal that SEB events occur at the edge of the Schottky junction, with the damaged area forming an approximately elliptical molten “void.” Geant 4 and TCAD simulation results show that the incidence of secondary ions, such as Cr, causes a rise in the lattice temperature inside the device, with the maximum lattice temperature increasing as UR increases. When UR is sufficiently high, the local lattice temperature reaches the melting point of the Ga2O3 material, ultimately leading to SEB failure. This study provides valuable theoretical support for Ga2O3-based power devices in aerospace applications.

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来源期刊

Applied Physics Letters 物理-物理：应用

CiteScore

6.40

自引率

10.00%

发文量

1821

审稿时长

1.6 months

期刊介绍： Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology. In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics. APL Perspectives are forward-looking invited letters which highlight recent developments or discoveries. Emphasis is placed on very recent developments, potentially disruptive technologies, open questions and possible solutions. They also include a mini-roadmap detailing where the community should direct efforts in order for the phenomena to be viable for application and the challenges associated with meeting that performance threshold. Perspectives are characterized by personal viewpoints and opinions of recognized experts in the field. Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.