Jinglong Xu;Mohamed Eleraky;Tzu-Yuan Huang;Chenhao Chu;Hua Wang
{"title":"一个紧凑的双中和ku波段功率放大器，峰值PAE为39%，22FDX+ EDMOS输出功率为23dbm，用于6G FR3","authors":"Jinglong Xu;Mohamed Eleraky;Tzu-Yuan Huang;Chenhao Chu;Hua Wang","doi":"10.1109/LMWT.2025.3566279","DOIUrl":null,"url":null,"abstract":"This letter presents a compact, doubly neutralized, two-stage power amplifier (PA) utilizing the new extended drain (EDMOS) device in 22FDX+, designed for 6G frequency range 3 (FR3) and Ku-band applications. Cascode double neutralization is proposed and analyzed in detail to demonstrate its necessity for the stability of RF/mmWave PA designs in scaled technology nodes. The PA achieves a <inline-formula> <tex-math>$P {_{\\text {SAT}}}$ </tex-math></inline-formula> of 23.55 dBm and a PAE<sub>MAX</sub> of 39.27% at 12 GHz. To the best of the authors’ knowledge, this work demonstrates the highest reported power density of 1.49 W/mm<sup>2</sup> using only a 2.4-V supply, thanks to the EDMOS device. Furthermore, it represents the first demonstration of a CMOS PA in 6G FR3 supporting the broadest complex modulation bandwidth, achieving 4250 MHz with 64-QAM and 1250 MHz with 256-QAM signals.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 6","pages":"856-859"},"PeriodicalIF":3.4000,"publicationDate":"2025-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Compact Doubly Neutralized Ku-Band Power Amplifier With 39% Peak PAE and 23-dBm Output Power in 22FDX+ EDMOS for 6G FR3\",\"authors\":\"Jinglong Xu;Mohamed Eleraky;Tzu-Yuan Huang;Chenhao Chu;Hua Wang\",\"doi\":\"10.1109/LMWT.2025.3566279\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This letter presents a compact, doubly neutralized, two-stage power amplifier (PA) utilizing the new extended drain (EDMOS) device in 22FDX+, designed for 6G frequency range 3 (FR3) and Ku-band applications. Cascode double neutralization is proposed and analyzed in detail to demonstrate its necessity for the stability of RF/mmWave PA designs in scaled technology nodes. The PA achieves a <inline-formula> <tex-math>$P {_{\\\\text {SAT}}}$ </tex-math></inline-formula> of 23.55 dBm and a PAE<sub>MAX</sub> of 39.27% at 12 GHz. To the best of the authors’ knowledge, this work demonstrates the highest reported power density of 1.49 W/mm<sup>2</sup> using only a 2.4-V supply, thanks to the EDMOS device. Furthermore, it represents the first demonstration of a CMOS PA in 6G FR3 supporting the broadest complex modulation bandwidth, achieving 4250 MHz with 64-QAM and 1250 MHz with 256-QAM signals.\",\"PeriodicalId\":73297,\"journal\":{\"name\":\"IEEE microwave and wireless technology letters\",\"volume\":\"35 6\",\"pages\":\"856-859\"},\"PeriodicalIF\":3.4000,\"publicationDate\":\"2025-03-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE microwave and wireless technology letters\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/11006956/\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"0\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE microwave and wireless technology letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/11006956/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"0","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
A Compact Doubly Neutralized Ku-Band Power Amplifier With 39% Peak PAE and 23-dBm Output Power in 22FDX+ EDMOS for 6G FR3
This letter presents a compact, doubly neutralized, two-stage power amplifier (PA) utilizing the new extended drain (EDMOS) device in 22FDX+, designed for 6G frequency range 3 (FR3) and Ku-band applications. Cascode double neutralization is proposed and analyzed in detail to demonstrate its necessity for the stability of RF/mmWave PA designs in scaled technology nodes. The PA achieves a $P {_{\text {SAT}}}$ of 23.55 dBm and a PAEMAX of 39.27% at 12 GHz. To the best of the authors’ knowledge, this work demonstrates the highest reported power density of 1.49 W/mm2 using only a 2.4-V supply, thanks to the EDMOS device. Furthermore, it represents the first demonstration of a CMOS PA in 6G FR3 supporting the broadest complex modulation bandwidth, achieving 4250 MHz with 64-QAM and 1250 MHz with 256-QAM signals.
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