Byeongcheol Yoon;Sooji Bae;Seungju Lee;Sungwoon Hwang;Jooyoung Jeon;Junghyun Kim
{"title":"手机用InGaP/GaAs HBT工艺中阻抗转换比优化的宽带类doherty负载调制平衡放大器","authors":"Byeongcheol Yoon;Sooji Bae;Seungju Lee;Sungwoon Hwang;Jooyoung Jeon;Junghyun Kim","doi":"10.1109/LMWT.2025.3560289","DOIUrl":null,"url":null,"abstract":"This letter presents a design methodology for implementing broadband load-modulated balanced amplifier (LMBA) for handset applications. It is evaluated which architecture, Doherty-like LMBA (DL-LMBA) or pseudo-Doherty LMBA (PD-LMBA), is more suitable for InGaP/GaAs HBT power amplifier (PA). The impedance transformation ratio (ITR) is optimized through an analysis of correlation between the coupler impedance (<inline-formula> <tex-math>$Z_{0}$ </tex-math></inline-formula>) and matching network (MN). A prototype LMBA attains measured saturation power (<inline-formula> <tex-math>$P_{\\text {SAT}}$ </tex-math></inline-formula>), collector efficiency (CE), and 6-dB output power back-off (OBO) CE of over 33.2 dBm, 45.2%, and 42.0%, respectively, in the range of 3.2–5.0 GHz. The LMBA is also evaluated by 5G NR FR1 100-MHz QPSK CP-OFDM with 9.5-dB peak-to-average power ratio (PAPR), achieving 26.6-dBm average output power (<inline-formula> <tex-math>$P_{\\text {avg}}$ </tex-math></inline-formula>) with 37.7% average CE (CE<sub>avg</sub>) at an adjacent channel leakage ratio (ACLR) of −33 dBc.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 6","pages":"848-851"},"PeriodicalIF":3.4000,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Broadband Doherty-Like Load-Modulated Balanced Amplifier With an Optimized Impedance Transformation Ratio in InGaP/GaAs HBT Process for Handset Applications\",\"authors\":\"Byeongcheol Yoon;Sooji Bae;Seungju Lee;Sungwoon Hwang;Jooyoung Jeon;Junghyun Kim\",\"doi\":\"10.1109/LMWT.2025.3560289\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This letter presents a design methodology for implementing broadband load-modulated balanced amplifier (LMBA) for handset applications. It is evaluated which architecture, Doherty-like LMBA (DL-LMBA) or pseudo-Doherty LMBA (PD-LMBA), is more suitable for InGaP/GaAs HBT power amplifier (PA). The impedance transformation ratio (ITR) is optimized through an analysis of correlation between the coupler impedance (<inline-formula> <tex-math>$Z_{0}$ </tex-math></inline-formula>) and matching network (MN). A prototype LMBA attains measured saturation power (<inline-formula> <tex-math>$P_{\\\\text {SAT}}$ </tex-math></inline-formula>), collector efficiency (CE), and 6-dB output power back-off (OBO) CE of over 33.2 dBm, 45.2%, and 42.0%, respectively, in the range of 3.2–5.0 GHz. The LMBA is also evaluated by 5G NR FR1 100-MHz QPSK CP-OFDM with 9.5-dB peak-to-average power ratio (PAPR), achieving 26.6-dBm average output power (<inline-formula> <tex-math>$P_{\\\\text {avg}}$ </tex-math></inline-formula>) with 37.7% average CE (CE<sub>avg</sub>) at an adjacent channel leakage ratio (ACLR) of −33 dBc.\",\"PeriodicalId\":73297,\"journal\":{\"name\":\"IEEE microwave and wireless technology letters\",\"volume\":\"35 6\",\"pages\":\"848-851\"},\"PeriodicalIF\":3.4000,\"publicationDate\":\"2025-04-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE microwave and wireless technology letters\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10978863/\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"0\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE microwave and wireless technology letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10978863/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"0","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
A Broadband Doherty-Like Load-Modulated Balanced Amplifier With an Optimized Impedance Transformation Ratio in InGaP/GaAs HBT Process for Handset Applications
This letter presents a design methodology for implementing broadband load-modulated balanced amplifier (LMBA) for handset applications. It is evaluated which architecture, Doherty-like LMBA (DL-LMBA) or pseudo-Doherty LMBA (PD-LMBA), is more suitable for InGaP/GaAs HBT power amplifier (PA). The impedance transformation ratio (ITR) is optimized through an analysis of correlation between the coupler impedance ($Z_{0}$ ) and matching network (MN). A prototype LMBA attains measured saturation power ($P_{\text {SAT}}$ ), collector efficiency (CE), and 6-dB output power back-off (OBO) CE of over 33.2 dBm, 45.2%, and 42.0%, respectively, in the range of 3.2–5.0 GHz. The LMBA is also evaluated by 5G NR FR1 100-MHz QPSK CP-OFDM with 9.5-dB peak-to-average power ratio (PAPR), achieving 26.6-dBm average output power ($P_{\text {avg}}$ ) with 37.7% average CE (CEavg) at an adjacent channel leakage ratio (ACLR) of −33 dBc.
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