LWIR级联探测器中InAs/InAsSb型超晶格的缺陷能级。

IF 3.2 2区物理与天体物理 Q2 OPTICS

Optics express Pub Date : 2025-06-02 DOI:10.1364/OE.562875

K Majkowycz, K Murawski, M Kopytko, B Seredyński, P Martyniuk

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引用次数: 0

摘要

本文介绍了利用RIBER Compact 21-DZ固体源分子束外延（MBE）系统在GaAs衬底上生长的长波红外（LWIR） ii型InAs/InAsSb超晶格（T2SLs）级联探测器的DLTS（深能级瞬态光谱）和PL（光致发光）结果。在300 K时，吸收剂的优化尺寸为10.6 μm。为了验证单个异质结构层的缺陷，对整个级联结构和级联检测器的单个单元（级）进行了DLTS测量。结果表明，吸收层中存在三个缺陷层（NDPs-原生点缺陷），其中一个与缓冲层与衬底之间的错配位错有关。

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Defect levels in InAs/InAsSb type-II superlattice for LWIR cascade detectors.

This work presents DLTS (deep level transient spectroscopy) and PL (photoluminescence) results for a longwave infrared (LWIR) type-II InAs/InAsSb superlattice (T2SLs) based cascade detectors grown by a RIBER Compact 21-DZ solid source molecular beam epitaxy (MBE) system on GaAs substrate. The absorber was optimized for 10.6 μm at 300 K. In order to verify defects from individual heterostructure layers, DLTS measurements were performed for the entire cascade structure and a single cell (stage) of the cascade detector. The obtained results indicate that there are three defect levels (NDPs- native point defects) located in the absorber layer and one related to the occurrence of mismatch dislocations between buffer and substrate.

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来源期刊

Optics express 物理-光学

CiteScore

6.60

自引率

15.80%

发文量

5182

审稿时长

2.1 months

期刊介绍： Optics Express is the all-electronic, open access journal for optics providing rapid publication for peer-reviewed articles that emphasize scientific and technology innovations in all aspects of optics and photonics.