755 nm InP/GaAs0.65P0.35量子点激光器，具有偏振相关的发射，从i型和ii型波段对准。

IF 3.3 2区物理与天体物理 Q2 OPTICS

Optics express Pub Date : 2025-06-02 DOI:10.1364/OE.563529

Wen Gu, Boqun Zhao, Ying Xue, Kei May Lau

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引用次数: 0

摘要

通过波段对准的裁剪，展示了具有可变偏振的InP/GaAs0.65P0.35量子点（QD）激光器。在不同参数的QD生长过程中，实现了i型和ii型的不同波段对准。i型结构的能量位移远小于ii型结构。此外，还研究了i型和ii型带脊波导激光器。对于i型和ii型波段激光器，最低阈值分别为0.37和0.40 kA/cm2，并且获得了不同的偏振特性。我们观察到不同波段对准产生的横向电偏振光（TE）和横向磁偏振光（TM），偏振度（DOP）达到80%。这些结果表明，InP/GaAs0.65P0.35量子点可以潜在地用于具有所需偏振的器件。

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755 nm InP/GaAs_0.65P_0.35 quantum dot laser with polarization-dependent emission from type-I and type-II band alignments.

InP/GaAs_0.65P_0.35 quantum dot (QD) lasers with variable polarization are demonstrated through the tailoring of band alignment. Different band alignments of type-I and type-II are realized during QD growth with varied parameters. The energy shift of type-I structure is observed to be much lower than that of type-II. Furthermore, type-I and type-II band ridge waveguide lasers were investigated. For type-I and type-II band lasers, the lowest thresholds are 0.37 and 0.40 kA/cm², respectively, and different polarization characteristics are achieved. We observed transverse electric (TE) and transverse magnetic (TM) polarized light resulted from different band alignments, and the degree of polarization (DOP) reached 80%. These results indicate that InP/GaAs_0.65P_0.35 QDs can be potentially used in devices with desired polarization.

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来源期刊

Optics express 物理-光学

CiteScore

6.60

自引率

15.80%

发文量

5182

审稿时长

2.1 months

期刊介绍： Optics Express is the all-electronic, open access journal for optics providing rapid publication for peer-reviewed articles that emphasize scientific and technology innovations in all aspects of optics and photonics.