You Jin Kim, Yu-Cheng Yeh, Po-Rei Huang, Guo-En Chang, Munho Kim
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Tensile-strained GeSn/Ge rolled-up nanomembrane with enhanced photoluminescence.
We present the development of a rolled-up GeSn/Ge nanomembrane designed to enhance its photoluminescence (PL). The fabrication process involves growing a GeSn/Ge/Si heterostructure on a silicon-on-insulator (SOI) substrate, followed by selective etching to release the nanomembrane. This process results in a rolled-up configuration, which not only relaxes the compressive strain but also achieves tensile strain on the GeSn layer, confirmed by Raman measurements. PL measurements exhibit a redshift in emission peak from 2361 to 2719 nm, indicating a reduction in bandgap energy to 0.456 eV. Additionally, PL intensity increases by 160% compared to the as-grown sample, highlighting the enhanced light emission efficiency owing to enhanced directness of bandgap by tensile strain.
期刊介绍:
The Optical Society (OSA) publishes high-quality, peer-reviewed articles in its portfolio of journals, which serve the full breadth of the optics and photonics community.
Optics Letters offers rapid dissemination of new results in all areas of optics with short, original, peer-reviewed communications. Optics Letters covers the latest research in optical science, including optical measurements, optical components and devices, atmospheric optics, biomedical optics, Fourier optics, integrated optics, optical processing, optoelectronics, lasers, nonlinear optics, optical storage and holography, optical coherence, polarization, quantum electronics, ultrafast optical phenomena, photonic crystals, and fiber optics. Criteria used in determining acceptability of contributions include newsworthiness to a substantial part of the optics community and the effect of rapid publication on the research of others. This journal, published twice each month, is where readers look for the latest discoveries in optics.