Xiaohui Li , Yan Yang , Zongcheng Su , Yu Xiong , Changjiang Chen , Long Wang , Wei Zhou , Hongjun Wang , Xiaoxin Xu
{"title":"非对称和对称双栅有机薄膜晶体管的电势模型","authors":"Xiaohui Li , Yan Yang , Zongcheng Su , Yu Xiong , Changjiang Chen , Long Wang , Wei Zhou , Hongjun Wang , Xiaoxin Xu","doi":"10.1016/j.orgel.2025.107286","DOIUrl":null,"url":null,"abstract":"<div><div>This paper proposes a potential-based model for asymmetric and symmetric double-gate organic thin-film transistors (DG-OTFT). The model is derived strictly from the accurate solution of one-dimensional Poisson's equation and current continuity equation. By preserving the proper physics, this model can exactly describe the distribution of electric potential and carrier density of DG-OTFT, and analyze the approximate and non-approximate distribution under the large voltage. Moreover, discussing the Ids characteristics of DG-OTFT based on surface potential equation, the causes of shoulder current are also analyzed in this paper. The theoretical calculations based on this model have good consistency with experimental data, playing an important role in promoting the development of DG-OTFT technology and providing valuable insights for its application in large-scale electronic devices.</div></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"144 ","pages":"Article 107286"},"PeriodicalIF":2.6000,"publicationDate":"2025-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Potential-based model for asymmetric and symmetric double-gate organic thin-film transistors\",\"authors\":\"Xiaohui Li , Yan Yang , Zongcheng Su , Yu Xiong , Changjiang Chen , Long Wang , Wei Zhou , Hongjun Wang , Xiaoxin Xu\",\"doi\":\"10.1016/j.orgel.2025.107286\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>This paper proposes a potential-based model for asymmetric and symmetric double-gate organic thin-film transistors (DG-OTFT). The model is derived strictly from the accurate solution of one-dimensional Poisson's equation and current continuity equation. By preserving the proper physics, this model can exactly describe the distribution of electric potential and carrier density of DG-OTFT, and analyze the approximate and non-approximate distribution under the large voltage. Moreover, discussing the Ids characteristics of DG-OTFT based on surface potential equation, the causes of shoulder current are also analyzed in this paper. The theoretical calculations based on this model have good consistency with experimental data, playing an important role in promoting the development of DG-OTFT technology and providing valuable insights for its application in large-scale electronic devices.</div></div>\",\"PeriodicalId\":399,\"journal\":{\"name\":\"Organic Electronics\",\"volume\":\"144 \",\"pages\":\"Article 107286\"},\"PeriodicalIF\":2.6000,\"publicationDate\":\"2025-06-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Organic Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S1566119925000928\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Organic Electronics","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1566119925000928","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Potential-based model for asymmetric and symmetric double-gate organic thin-film transistors
This paper proposes a potential-based model for asymmetric and symmetric double-gate organic thin-film transistors (DG-OTFT). The model is derived strictly from the accurate solution of one-dimensional Poisson's equation and current continuity equation. By preserving the proper physics, this model can exactly describe the distribution of electric potential and carrier density of DG-OTFT, and analyze the approximate and non-approximate distribution under the large voltage. Moreover, discussing the Ids characteristics of DG-OTFT based on surface potential equation, the causes of shoulder current are also analyzed in this paper. The theoretical calculations based on this model have good consistency with experimental data, playing an important role in promoting the development of DG-OTFT technology and providing valuable insights for its application in large-scale electronic devices.
期刊介绍:
Organic Electronics is a journal whose primary interdisciplinary focus is on materials and phenomena related to organic devices such as light emitting diodes, thin film transistors, photovoltaic cells, sensors, memories, etc.
Papers suitable for publication in this journal cover such topics as photoconductive and electronic properties of organic materials, thin film structures and characterization in the context of organic devices, charge and exciton transport, organic electronic and optoelectronic devices.