5,10,15,20-四苯基卟啉的光波导NH3传感性能和化学气敏行为

IF 4.9 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Gulimire Tuerdi , Patima Nizamidin , Zhifeng Chen , Abliz Yimit
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引用次数: 0

摘要

5,10,15,20-四苯基卟啉(tetraphenylporphyrin, TPP)是一种稳定的氧化还原活性芳香共轭大环,在气敏领域的应用备受关注。在这里,我们使用TPP作为敏化剂,开发了光波导(OWG)传感器和化学电阻气体传感器。由于TPP薄膜/K+离子交换玻璃OWG传感器的HOMO-LOMO能差很小,带隙小,在0.1-100 ppm浓度范围内对NH3具有可逆的开关响应,对H2S和胺类气体具有良好的可逆性、选择性和快速的响应恢复时间。同时,TPP化学阻性气体传感器在测量H2S和NO2气体时表现出n型半导体特性,具有高响应和快速响应恢复时间。该研究为有毒气体检测提供了一种可重复的传感器设计,并对玻璃OWG薄膜气敏机理与化学电阻传感材料之间的关系提供了新的见解。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Optical waveguide NH3 sensing properties and chemiresistive gas sensing behavior of 5,10,15,20-tetraphenylporphyrin
5,10,15,20-Tetraphenylporphyrin (TPP), a stable redox-active aromatic-conjugated macrocycle, has received much attention in gas sensing applications. Herein, using TPP as a sensitizer, we developed an optical waveguide (OWG) sensor and a chemiresistive gas sensor. Owing to the very small HOMO–LOMO energy level differences and low bandgap of TPP, the TPP thin-film/K+ -ion exchanged glass OWG sensor shows a reversible on–off response to NH3 in the concentration range of 0.1–100 ppm and excellent reversibility, selectivity, and fast response–recovery time toward H2S and amine gases. Meanwhile, the TPP chemiresistive gas sensor exhibits n-type semiconductor behavior for the measurement of H2S and NO2 gases with a high response and a fast response–recovery time. This study provides a reproducible sensor design for toxic gas detection and new insights into the relationship between the gas sensing mechanism of glass OWG thin films and chemiresistive sensing materials.
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来源期刊
Sensors and Actuators A-physical
Sensors and Actuators A-physical 工程技术-工程:电子与电气
CiteScore
8.10
自引率
6.50%
发文量
630
审稿时长
49 days
期刊介绍: Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas: • Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results. • Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon. • Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays. • Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers. Etc...
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