{"title":"电离辐射对bjt空间电荷区影响的实验证据","authors":"Kai Wang, Jianqun Yang, Zhengfeng Bai, Xingji Li","doi":"10.1049/ell2.70312","DOIUrl":null,"url":null,"abstract":"<p>This study investigates the interplay between ionizing radiation-induced interface traps and displacement defects in NPN bipolar junction transistors (BJTs) containing high-density Au defects. Through <sup>60</sup>Co γ-ray irradiation experiments and technology computer-aided design (TCAD) simulations, we demonstrate that positively charged interface traps induce a spatial redistribution of the space charge region (SCR), contracting the SCR in the N-type collector while expanding it into the P-type base. Deep-level transient spectroscopy (DLTS) reveals a 40% reduction in Au defect concentration (from 1.09 × 10<sup>14</sup> cm<sup>−3</sup> to 6.55 × 10<sup>13</sup> cm<sup>−3</sup>) post-irradiation, corroborated by simulated electron concentration profiles. These findings provide direct experimental evidence of ionizing radiation's impact on SCR modulation, critical for radiation-hardened device design.</p>","PeriodicalId":11556,"journal":{"name":"Electronics Letters","volume":"61 1","pages":""},"PeriodicalIF":0.8000,"publicationDate":"2025-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1049/ell2.70312","citationCount":"0","resultStr":"{\"title\":\"Experimental Evidence of the Effect of Ionizing Radiation on the Space Charge Region in BJTs\",\"authors\":\"Kai Wang, Jianqun Yang, Zhengfeng Bai, Xingji Li\",\"doi\":\"10.1049/ell2.70312\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>This study investigates the interplay between ionizing radiation-induced interface traps and displacement defects in NPN bipolar junction transistors (BJTs) containing high-density Au defects. Through <sup>60</sup>Co γ-ray irradiation experiments and technology computer-aided design (TCAD) simulations, we demonstrate that positively charged interface traps induce a spatial redistribution of the space charge region (SCR), contracting the SCR in the N-type collector while expanding it into the P-type base. Deep-level transient spectroscopy (DLTS) reveals a 40% reduction in Au defect concentration (from 1.09 × 10<sup>14</sup> cm<sup>−3</sup> to 6.55 × 10<sup>13</sup> cm<sup>−3</sup>) post-irradiation, corroborated by simulated electron concentration profiles. These findings provide direct experimental evidence of ionizing radiation's impact on SCR modulation, critical for radiation-hardened device design.</p>\",\"PeriodicalId\":11556,\"journal\":{\"name\":\"Electronics Letters\",\"volume\":\"61 1\",\"pages\":\"\"},\"PeriodicalIF\":0.8000,\"publicationDate\":\"2025-06-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://onlinelibrary.wiley.com/doi/epdf/10.1049/ell2.70312\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Electronics Letters\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ietresearch.onlinelibrary.wiley.com/doi/10.1049/ell2.70312\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Electronics Letters","FirstCategoryId":"5","ListUrlMain":"https://ietresearch.onlinelibrary.wiley.com/doi/10.1049/ell2.70312","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Experimental Evidence of the Effect of Ionizing Radiation on the Space Charge Region in BJTs
This study investigates the interplay between ionizing radiation-induced interface traps and displacement defects in NPN bipolar junction transistors (BJTs) containing high-density Au defects. Through 60Co γ-ray irradiation experiments and technology computer-aided design (TCAD) simulations, we demonstrate that positively charged interface traps induce a spatial redistribution of the space charge region (SCR), contracting the SCR in the N-type collector while expanding it into the P-type base. Deep-level transient spectroscopy (DLTS) reveals a 40% reduction in Au defect concentration (from 1.09 × 1014 cm−3 to 6.55 × 1013 cm−3) post-irradiation, corroborated by simulated electron concentration profiles. These findings provide direct experimental evidence of ionizing radiation's impact on SCR modulation, critical for radiation-hardened device design.
期刊介绍：
Electronics Letters is an internationally renowned peer-reviewed rapid-communication journal that publishes short original research papers every two weeks. Its broad and interdisciplinary scope covers the latest developments in all electronic engineering related fields including communication, biomedical, optical and device technologies. Electronics Letters also provides further insight into some of the latest developments through special features and interviews.
Scope
As a journal at the forefront of its field, Electronics Letters publishes papers covering all themes of electronic and electrical engineering. The major themes of the journal are listed below.
Antennas and Propagation
Biomedical and Bioinspired Technologies, Signal Processing and Applications
Control Engineering
Electromagnetism: Theory, Materials and Devices
Electronic Circuits and Systems
Image, Video and Vision Processing and Applications
Information, Computing and Communications
Instrumentation and Measurement
Microwave Technology
Optical Communications
Photonics and Opto-Electronics
Power Electronics, Energy and Sustainability
Radar, Sonar and Navigation
Semiconductor Technology
Signal Processing
MIMO
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