{"title":"变化检测应用的高效近似减法","authors":"Fatemeh Pooladi;Farshad Pesaran;Nabiollah Shiri","doi":"10.1109/LES.2024.3510416","DOIUrl":null,"url":null,"abstract":"Approximate full subtractors (FSs) are used in unsigned restoring dividers (Drs) for change detection in image processing. In this letter, two new single-bit approximate FSs with eight and six transistors are presented which first circuit uses XNOR-F2 gates while the second one is designed based on multiplexer-F2 gates. The circuits are named XNF2 and MF2. The designs are implemented by the gate diffusion input (GDI) technique and 32-nm carbon nanotube field-effect transistor (CNTFET) technology. The XNF2 improves the delay and area with a favorable error rate (ER), with only two errors. The MF2 creates a suitable tradeoff between power, area, and accuracy and free of error distance (ED) > 1 that leads to a mean relative ED (MRED) < 0.375 and only 3 errors. Different figures of merits (FoMs) confirm the reliability of the cells for error-resilient applications, like change detection.","PeriodicalId":56143,"journal":{"name":"IEEE Embedded Systems Letters","volume":"17 3","pages":"168-171"},"PeriodicalIF":2.0000,"publicationDate":"2024-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High-Efficient Approximate Subtractors for Change Detection Applications\",\"authors\":\"Fatemeh Pooladi;Farshad Pesaran;Nabiollah Shiri\",\"doi\":\"10.1109/LES.2024.3510416\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Approximate full subtractors (FSs) are used in unsigned restoring dividers (Drs) for change detection in image processing. In this letter, two new single-bit approximate FSs with eight and six transistors are presented which first circuit uses XNOR-F2 gates while the second one is designed based on multiplexer-F2 gates. The circuits are named XNF2 and MF2. The designs are implemented by the gate diffusion input (GDI) technique and 32-nm carbon nanotube field-effect transistor (CNTFET) technology. The XNF2 improves the delay and area with a favorable error rate (ER), with only two errors. The MF2 creates a suitable tradeoff between power, area, and accuracy and free of error distance (ED) > 1 that leads to a mean relative ED (MRED) < 0.375 and only 3 errors. Different figures of merits (FoMs) confirm the reliability of the cells for error-resilient applications, like change detection.\",\"PeriodicalId\":56143,\"journal\":{\"name\":\"IEEE Embedded Systems Letters\",\"volume\":\"17 3\",\"pages\":\"168-171\"},\"PeriodicalIF\":2.0000,\"publicationDate\":\"2024-12-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Embedded Systems Letters\",\"FirstCategoryId\":\"94\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10772568/\",\"RegionNum\":4,\"RegionCategory\":\"计算机科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"COMPUTER SCIENCE, HARDWARE & ARCHITECTURE\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Embedded Systems Letters","FirstCategoryId":"94","ListUrlMain":"https://ieeexplore.ieee.org/document/10772568/","RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"COMPUTER SCIENCE, HARDWARE & ARCHITECTURE","Score":null,"Total":0}
High-Efficient Approximate Subtractors for Change Detection Applications
Approximate full subtractors (FSs) are used in unsigned restoring dividers (Drs) for change detection in image processing. In this letter, two new single-bit approximate FSs with eight and six transistors are presented which first circuit uses XNOR-F2 gates while the second one is designed based on multiplexer-F2 gates. The circuits are named XNF2 and MF2. The designs are implemented by the gate diffusion input (GDI) technique and 32-nm carbon nanotube field-effect transistor (CNTFET) technology. The XNF2 improves the delay and area with a favorable error rate (ER), with only two errors. The MF2 creates a suitable tradeoff between power, area, and accuracy and free of error distance (ED) > 1 that leads to a mean relative ED (MRED) < 0.375 and only 3 errors. Different figures of merits (FoMs) confirm the reliability of the cells for error-resilient applications, like change detection.
期刊介绍:
The IEEE Embedded Systems Letters (ESL), provides a forum for rapid dissemination of latest technical advances in embedded systems and related areas in embedded software. The emphasis is on models, methods, and tools that ensure secure, correct, efficient and robust design of embedded systems and their applications.