Bernhard Pruckner , Nils Petter Jørstad , Wolfgang Goes , Siegfried Selberherr , Viktor Sverdlov
{"title":"非共线反铁磁体SOT-MRAM器件的无场磁化开关","authors":"Bernhard Pruckner , Nils Petter Jørstad , Wolfgang Goes , Siegfried Selberherr , Viktor Sverdlov","doi":"10.1016/j.mee.2025.112372","DOIUrl":null,"url":null,"abstract":"<div><div>Spin-orbit torque magnetoresistive random access memory (SOT-MRAM) is a promising nonvolatile memory technology that offers fast writing speed, low power, and long endurance. However, achieving deterministic perpendicular magnetization switching typically requires an external field, limiting scalability. This work explores the incorporation of noncollinear antiferromagnetic (nc-AFMs), exhibiting the magnetic spin Hall effect (MSHE), and exchange bias to enable field-free deterministic switching. MSHE has been observed in Mn<span><math><msub><mrow></mrow><mn>3</mn></msub></math></span>Sn, MnPd<span><math><msub><mrow></mrow><mn>3</mn></msub></math></span>. The ratio of out-of-plane to in-plane polarized spin-currents is crucial for field-free MSHE-driven magnetization switching. It was found that a minimum ratio is needed to drive field-free perpendicular switching. Exchange bias acting at the interface between in-plane AFM and out-of-plane ferromagnet (FM) has been demonstrated to enable field-free SOT-driven magnetization switching. We show, that exchange bias can facilitate field-free perpendicular switching in cases of a missing or too small out-of-plane polarized spin current component. We present a fully three-dimensional finite element model that couples spin currents and magnetization dynamics to simulate SOT-MRAM devices utilizing the MSHE. We show that the use of nc-AFMs eliminates the need for external fields without compromising performance, simplifying design, and boosting scalability.</div></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":"300 ","pages":"Article 112372"},"PeriodicalIF":3.1000,"publicationDate":"2025-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Field-free magnetization switching in SOT-MRAM devices with noncollinear antiferromagnets\",\"authors\":\"Bernhard Pruckner , Nils Petter Jørstad , Wolfgang Goes , Siegfried Selberherr , Viktor Sverdlov\",\"doi\":\"10.1016/j.mee.2025.112372\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>Spin-orbit torque magnetoresistive random access memory (SOT-MRAM) is a promising nonvolatile memory technology that offers fast writing speed, low power, and long endurance. However, achieving deterministic perpendicular magnetization switching typically requires an external field, limiting scalability. This work explores the incorporation of noncollinear antiferromagnetic (nc-AFMs), exhibiting the magnetic spin Hall effect (MSHE), and exchange bias to enable field-free deterministic switching. MSHE has been observed in Mn<span><math><msub><mrow></mrow><mn>3</mn></msub></math></span>Sn, MnPd<span><math><msub><mrow></mrow><mn>3</mn></msub></math></span>. The ratio of out-of-plane to in-plane polarized spin-currents is crucial for field-free MSHE-driven magnetization switching. It was found that a minimum ratio is needed to drive field-free perpendicular switching. Exchange bias acting at the interface between in-plane AFM and out-of-plane ferromagnet (FM) has been demonstrated to enable field-free SOT-driven magnetization switching. We show, that exchange bias can facilitate field-free perpendicular switching in cases of a missing or too small out-of-plane polarized spin current component. We present a fully three-dimensional finite element model that couples spin currents and magnetization dynamics to simulate SOT-MRAM devices utilizing the MSHE. We show that the use of nc-AFMs eliminates the need for external fields without compromising performance, simplifying design, and boosting scalability.</div></div>\",\"PeriodicalId\":18557,\"journal\":{\"name\":\"Microelectronic Engineering\",\"volume\":\"300 \",\"pages\":\"Article 112372\"},\"PeriodicalIF\":3.1000,\"publicationDate\":\"2025-06-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Microelectronic Engineering\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0167931725000619\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronic Engineering","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0167931725000619","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Field-free magnetization switching in SOT-MRAM devices with noncollinear antiferromagnets
Spin-orbit torque magnetoresistive random access memory (SOT-MRAM) is a promising nonvolatile memory technology that offers fast writing speed, low power, and long endurance. However, achieving deterministic perpendicular magnetization switching typically requires an external field, limiting scalability. This work explores the incorporation of noncollinear antiferromagnetic (nc-AFMs), exhibiting the magnetic spin Hall effect (MSHE), and exchange bias to enable field-free deterministic switching. MSHE has been observed in MnSn, MnPd. The ratio of out-of-plane to in-plane polarized spin-currents is crucial for field-free MSHE-driven magnetization switching. It was found that a minimum ratio is needed to drive field-free perpendicular switching. Exchange bias acting at the interface between in-plane AFM and out-of-plane ferromagnet (FM) has been demonstrated to enable field-free SOT-driven magnetization switching. We show, that exchange bias can facilitate field-free perpendicular switching in cases of a missing or too small out-of-plane polarized spin current component. We present a fully three-dimensional finite element model that couples spin currents and magnetization dynamics to simulate SOT-MRAM devices utilizing the MSHE. We show that the use of nc-AFMs eliminates the need for external fields without compromising performance, simplifying design, and boosting scalability.
期刊介绍:
Microelectronic Engineering is the premier nanoprocessing, and nanotechnology journal focusing on fabrication of electronic, photonic, bioelectronic, electromechanic and fluidic devices and systems, and their applications in the broad areas of electronics, photonics, energy, life sciences, and environment. It covers also the expanding interdisciplinary field of "more than Moore" and "beyond Moore" integrated nanoelectronics / photonics and micro-/nano-/bio-systems. Through its unique mixture of peer-reviewed articles, reviews, accelerated publications, short and Technical notes, and the latest research news on key developments, Microelectronic Engineering provides comprehensive coverage of this exciting, interdisciplinary and dynamic new field for researchers in academia and professionals in industry.