Benjamin L Aronson, Kyle P Kelley, Ece Gunay, Ian Mercer, Bogdan Dryzhakov, Jon-Paul Maria, Elizabeth C Dickey, Susan Trolier-McKinstry, Jon F Ihlefeld
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Ferroelectricity in Atomic Layer Deposited Wurtzite Zinc Magnesium Oxide Zn1-xMgxO.
Conformal deposition of wurtzite ferroelectrics, which is needed for their use in scaled nonvolatile memories, is challenging using current physical vapor deposition techniques. To overcome the conformality barrier, this work demonstrates ferroelectricity in wurtzite Zn1-xMgxO thin films prepared by plasma-enhanced atomic layer deposition, which is a non-line-of-sight deposition method. Films ranging in composition from x = 0.00 to x = 0.58 are predominantly wurtzite phase and exhibit a (0001)-texture. Increasing the magnesium content decreases the c/a ratio, increases the optical bandgap energy, increases the piezoelectric response, and enables polarization reversal. Clear polarization switching is demonstrated in 50 nm thick Zn1-xMgxO films by piezoresponse force microscopy in compositions containing x = 0.46 and x = 0.58.
期刊介绍：
Nano Letters serves as a dynamic platform for promptly disseminating original results in fundamental, applied, and emerging research across all facets of nanoscience and nanotechnology. A pivotal criterion for inclusion within Nano Letters is the convergence of at least two different areas or disciplines, ensuring a rich interdisciplinary scope. The journal is dedicated to fostering exploration in diverse areas, including:
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- Realization of integrated nanostructures and nano-engineered devices exhibiting advanced performance
- Applications of nanoscale materials in living and environmental systems
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