氮化4H-SiC(0001)/SiO2界面价带边缘附近有较小的表面电位波动

IF 3.6 2区物理与天体物理 Q2 PHYSICS, APPLIED

Applied Physics Letters Pub Date : 2025-06-04 DOI:10.1063/5.0268937

Kyota Mikami, Mitsuaki Kaneko, Tsunenobu Kimoto

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引用次数: 0

摘要

采用电导法、C -ψS法和高低法研究了氮化4H-SiC /SiO2界面价带边缘附近的界面态。利用电导法和C -ψS法提取了界面态密度的一致能量分布。EV+0.2 EV时的界面态密度为3.9×1012cm−2eV−1，与EC−0.2 EV时的界面态密度相当。电导法得到的表面电位波动的标准差在价带边缘附近小至3-13 meV，明显小于在导带边缘附近的标准差（~ 100 meV）。这一发现表明，由表面电位波动引起的散射在SiC p沟道金属氧化物半导体场效应晶体管（mosfet）中比在n沟道mosfet中要小得多，这可能是SiC p沟道mosfet具有较高迁移率的原因之一。

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Small surface potential fluctuation near the valence band edge at nitrided 4H-SiC(0001)/SiO2 interfaces

Interface states near the valence band edge at a nitrided 4H-SiC(0001)/SiO2 interface were investigated by the conductance, C–ψS, and high-low methods. Consistent energy distribution of the interface state density was extracted by the conductance and C–ψS methods. The interface state density at EV+0.2 eV is 3.9×1012cm−2eV−1, which is comparable to that at EC−0.2 eV. The standard deviation of the surface potential fluctuation obtained by the conductance method is as small as 3–13 meV near the valence band edge, which is significantly smaller than that near the conduction band edge (∼100 meV). This finding indicates that the scattering caused by the surface potential fluctuation is much smaller in SiC p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) than in n-channel MOSFETs, which would be one of the reasons for the relatively high mobility in SiC p-channel MOSFETs.

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来源期刊

Applied Physics Letters 物理-物理：应用

CiteScore

6.40

自引率

10.00%

发文量

1821

审稿时长

1.6 months

期刊介绍： Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology. In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics. APL Perspectives are forward-looking invited letters which highlight recent developments or discoveries. Emphasis is placed on very recent developments, potentially disruptive technologies, open questions and possible solutions. They also include a mini-roadmap detailing where the community should direct efforts in order for the phenomena to be viable for application and the challenges associated with meeting that performance threshold. Perspectives are characterized by personal viewpoints and opinions of recognized experts in the field. Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.