振荡晶格环中的旋转拓扑缺陷及其注入锁定性质

IF 1.8 3区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Shunto Hirosawa, Koichi Narahara
{"title":"振荡晶格环中的旋转拓扑缺陷及其注入锁定性质","authors":"Shunto Hirosawa,&nbsp;Koichi Narahara","doi":"10.1002/cta.4316","DOIUrl":null,"url":null,"abstract":"<div>\n \n <p>The lattice loop formed by adjacent coupling of tunnel diode LC oscillators has been shown to generate topological defects due to broken mirror symmetry, which rotate in the opposite direction to the rotating pulse. Leveraging the injection locking of the rotational dynamics of these topological defects can lead to a subharmonic injection locking scheme with a large division ratio. This paper aims to enhance the design by elucidating the relationship between loop size, the number of topological defects, and the division ratio. Furthermore, we perform bifurcation analysis of the injection locking system, demonstrating that when the external signal strength reaches a certain threshold, defect pinning by the external signal occurs, leading to an extension of the lock range. The dynamics of topological defects are well suited to the so-called progressive multiphase injection locking. In this paper, we clarify the degree of lock range extension achieved by introducing this technique.</p>\n </div>","PeriodicalId":13874,"journal":{"name":"International Journal of Circuit Theory and Applications","volume":"53 6","pages":"3767-3777"},"PeriodicalIF":1.8000,"publicationDate":"2024-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Rotary Topological Defects in an Oscillator Lattice Loop and Their Injection Locked Properties\",\"authors\":\"Shunto Hirosawa,&nbsp;Koichi Narahara\",\"doi\":\"10.1002/cta.4316\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div>\\n \\n <p>The lattice loop formed by adjacent coupling of tunnel diode LC oscillators has been shown to generate topological defects due to broken mirror symmetry, which rotate in the opposite direction to the rotating pulse. Leveraging the injection locking of the rotational dynamics of these topological defects can lead to a subharmonic injection locking scheme with a large division ratio. This paper aims to enhance the design by elucidating the relationship between loop size, the number of topological defects, and the division ratio. Furthermore, we perform bifurcation analysis of the injection locking system, demonstrating that when the external signal strength reaches a certain threshold, defect pinning by the external signal occurs, leading to an extension of the lock range. The dynamics of topological defects are well suited to the so-called progressive multiphase injection locking. In this paper, we clarify the degree of lock range extension achieved by introducing this technique.</p>\\n </div>\",\"PeriodicalId\":13874,\"journal\":{\"name\":\"International Journal of Circuit Theory and Applications\",\"volume\":\"53 6\",\"pages\":\"3767-3777\"},\"PeriodicalIF\":1.8000,\"publicationDate\":\"2024-10-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Journal of Circuit Theory and Applications\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://onlinelibrary.wiley.com/doi/10.1002/cta.4316\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Journal of Circuit Theory and Applications","FirstCategoryId":"5","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/cta.4316","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

由隧道二极管LC振荡器相邻耦合形成的晶格环由于破镜对称性而产生拓扑缺陷,其旋转方向与旋转脉冲相反。利用这些拓扑缺陷的旋转动力学注入锁定可以得到具有大分割比的次谐波注入锁定方案。本文旨在通过阐明回路尺寸、拓扑缺陷数量和分割比之间的关系来提高设计。此外,我们对注射锁定系统进行了分岔分析,表明当外部信号强度达到一定阈值时,会发生外部信号的缺陷钉住,导致锁定范围的扩大。拓扑缺陷的动力学非常适合于所谓的渐进式多相注入锁定。在本文中,我们阐明了通过引入该技术实现的锁范围扩展的程度。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Rotary Topological Defects in an Oscillator Lattice Loop and Their Injection Locked Properties

The lattice loop formed by adjacent coupling of tunnel diode LC oscillators has been shown to generate topological defects due to broken mirror symmetry, which rotate in the opposite direction to the rotating pulse. Leveraging the injection locking of the rotational dynamics of these topological defects can lead to a subharmonic injection locking scheme with a large division ratio. This paper aims to enhance the design by elucidating the relationship between loop size, the number of topological defects, and the division ratio. Furthermore, we perform bifurcation analysis of the injection locking system, demonstrating that when the external signal strength reaches a certain threshold, defect pinning by the external signal occurs, leading to an extension of the lock range. The dynamics of topological defects are well suited to the so-called progressive multiphase injection locking. In this paper, we clarify the degree of lock range extension achieved by introducing this technique.

求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
International Journal of Circuit Theory and Applications
International Journal of Circuit Theory and Applications 工程技术-工程:电子与电气
CiteScore
3.60
自引率
34.80%
发文量
277
审稿时长
4.5 months
期刊介绍: The scope of the Journal comprises all aspects of the theory and design of analog and digital circuits together with the application of the ideas and techniques of circuit theory in other fields of science and engineering. Examples of the areas covered include: Fundamental Circuit Theory together with its mathematical and computational aspects; Circuit modeling of devices; Synthesis and design of filters and active circuits; Neural networks; Nonlinear and chaotic circuits; Signal processing and VLSI; Distributed, switched and digital circuits; Power electronics; Solid state devices. Contributions to CAD and simulation are welcome.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信