Moussa Mezhoud, Martando Rath, Stéphanie Gascoin, Sylvain Duprey, Philippe Marie, Julien Cardin, Christophe Labbé, Wilfrid Prellier and Ulrike Lüders
{"title":"利用二元和三元氧化物盖层提高新一代钙钛矿基tco的长期稳定性","authors":"Moussa Mezhoud, Martando Rath, Stéphanie Gascoin, Sylvain Duprey, Philippe Marie, Julien Cardin, Christophe Labbé, Wilfrid Prellier and Ulrike Lüders","doi":"10.1039/D4NR04806G","DOIUrl":null,"url":null,"abstract":"<p >We report the impact of capping layers on vanadate based transparent conductive oxides (TCOs) to prolong the thermal stability with a minimal loss of electrical conductivity during heat treatment in ambient environment. In the present study, various capping layers (amorphous Al<small><sub>2</sub></small>O<small><sub>3</sub></small>, LaAlO<small><sub>3</sub></small> (LAO), TiO<small><sub>2</sub></small> grown at base pressure and TiO<small><sub>2</sub></small> deposited under oxygen partial pressure) are grown <em>in situ</em> on polycrystalline perovskite SrVO<small><sub>3</sub></small> (SVO) thin films using Pulsed Laser Deposition (PLD). The results show that amorphous LaAlO<small><sub>3</sub></small> is the most promising capping layer among the oxide layers, to preserve both electrical and optical properties of perovskite SVO films from natural as well as artificial aging. Our present approach for a capping layer on SVO may address the long-term stability issues of correlated TCOs and would open an opportunity for the future oxide electronics applications.</p>","PeriodicalId":92,"journal":{"name":"Nanoscale","volume":" 25","pages":" 15319-15330"},"PeriodicalIF":5.1000,"publicationDate":"2025-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.rsc.org/en/content/articlepdf/2025/nr/d4nr04806g?page=search","citationCount":"0","resultStr":"{\"title\":\"Improving the long-term stability of new-generation perovskite-based TCOs using binary and ternary oxides capping layers†\",\"authors\":\"Moussa Mezhoud, Martando Rath, Stéphanie Gascoin, Sylvain Duprey, Philippe Marie, Julien Cardin, Christophe Labbé, Wilfrid Prellier and Ulrike Lüders\",\"doi\":\"10.1039/D4NR04806G\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p >We report the impact of capping layers on vanadate based transparent conductive oxides (TCOs) to prolong the thermal stability with a minimal loss of electrical conductivity during heat treatment in ambient environment. In the present study, various capping layers (amorphous Al<small><sub>2</sub></small>O<small><sub>3</sub></small>, LaAlO<small><sub>3</sub></small> (LAO), TiO<small><sub>2</sub></small> grown at base pressure and TiO<small><sub>2</sub></small> deposited under oxygen partial pressure) are grown <em>in situ</em> on polycrystalline perovskite SrVO<small><sub>3</sub></small> (SVO) thin films using Pulsed Laser Deposition (PLD). The results show that amorphous LaAlO<small><sub>3</sub></small> is the most promising capping layer among the oxide layers, to preserve both electrical and optical properties of perovskite SVO films from natural as well as artificial aging. Our present approach for a capping layer on SVO may address the long-term stability issues of correlated TCOs and would open an opportunity for the future oxide electronics applications.</p>\",\"PeriodicalId\":92,\"journal\":{\"name\":\"Nanoscale\",\"volume\":\" 25\",\"pages\":\" 15319-15330\"},\"PeriodicalIF\":5.1000,\"publicationDate\":\"2025-06-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://pubs.rsc.org/en/content/articlepdf/2025/nr/d4nr04806g?page=search\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Nanoscale\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://pubs.rsc.org/en/content/articlelanding/2025/nr/d4nr04806g\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"CHEMISTRY, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nanoscale","FirstCategoryId":"88","ListUrlMain":"https://pubs.rsc.org/en/content/articlelanding/2025/nr/d4nr04806g","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
Improving the long-term stability of new-generation perovskite-based TCOs using binary and ternary oxides capping layers†
We report the impact of capping layers on vanadate based transparent conductive oxides (TCOs) to prolong the thermal stability with a minimal loss of electrical conductivity during heat treatment in ambient environment. In the present study, various capping layers (amorphous Al2O3, LaAlO3 (LAO), TiO2 grown at base pressure and TiO2 deposited under oxygen partial pressure) are grown in situ on polycrystalline perovskite SrVO3 (SVO) thin films using Pulsed Laser Deposition (PLD). The results show that amorphous LaAlO3 is the most promising capping layer among the oxide layers, to preserve both electrical and optical properties of perovskite SVO films from natural as well as artificial aging. Our present approach for a capping layer on SVO may address the long-term stability issues of correlated TCOs and would open an opportunity for the future oxide electronics applications.
期刊介绍:
Nanoscale is a high-impact international journal, publishing high-quality research across nanoscience and nanotechnology. Nanoscale publishes a full mix of research articles on experimental and theoretical work, including reviews, communications, and full papers.Highly interdisciplinary, this journal appeals to scientists, researchers and professionals interested in nanoscience and nanotechnology, quantum materials and quantum technology, including the areas of physics, chemistry, biology, medicine, materials, energy/environment, information technology, detection science, healthcare and drug discovery, and electronics.