通过逐步传输层降低高性能蓝色倒转ZnSeTe qled的电子注入势垒

IF 3.6 2区物理与天体物理 Q2 PHYSICS, APPLIED

Applied Physics Letters Pub Date : 2025-06-03 DOI:10.1063/5.0272369

Yi Liang, Sheng Cao, Qiuyan Li, Yuanjin Huang, Yuhe Bi, Chenglin Lai, Bingsuo Zou, Jialong Zhao

{"title":"通过逐步传输层降低高性能蓝色倒转ZnSeTe qled的电子注入势垒","authors":"Yi Liang, Sheng Cao, Qiuyan Li, Yuanjin Huang, Yuhe Bi, Chenglin Lai, Bingsuo Zou, Jialong Zhao","doi":"10.1063/5.0272369","DOIUrl":null,"url":null,"abstract":"All-solution processed inverted quantum dot light-emitting diodes (QLEDs) have shown great promise for applications in lighting and display technologies. However, the practical deployment of eco-friendly blue inverted QLEDs remains a significant challenge, particularly in enhancing their luminous efficiency and operational stability. Herein, we report an eco-friendly, all-solution processed inverted blue QLEDs based on ZnSeTe quantum-dots, incorporating a ZnO interlayer within the electron transport layer to establish a stepwise double-layer electron transport structure. The ZnO interlayer effectively reduces the electron injection barrier between ITO and ZnMgO layers, thereby enhancing electron injection efficiency, promoting carrier recombination, and ultimately improving device performance. The experimental results reveal that ZnSeTe-based all-solution inverted blue QLEDs with the ZnO interlayer achieved a maximum external quantum efficiency of 6.1%, a peak brightness of 1862 cd m−2, and a T50 lifetime of 6.7 h at 1000 cd m−2. This study demonstrates the effectiveness of ZnO interlayer in improving the performance of eco-friendly all-solution inverted QLEDs and provides valuable insights for advancing eco-friendly QLED technology.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"9 1","pages":""},"PeriodicalIF":3.6000,"publicationDate":"2025-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Lowering electron injection barrier via stepwise transport layer for high-performance blue inverted ZnSeTe QLEDs\",\"authors\":\"Yi Liang, Sheng Cao, Qiuyan Li, Yuanjin Huang, Yuhe Bi, Chenglin Lai, Bingsuo Zou, Jialong Zhao\",\"doi\":\"10.1063/5.0272369\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"All-solution processed inverted quantum dot light-emitting diodes (QLEDs) have shown great promise for applications in lighting and display technologies. However, the practical deployment of eco-friendly blue inverted QLEDs remains a significant challenge, particularly in enhancing their luminous efficiency and operational stability. Herein, we report an eco-friendly, all-solution processed inverted blue QLEDs based on ZnSeTe quantum-dots, incorporating a ZnO interlayer within the electron transport layer to establish a stepwise double-layer electron transport structure. The ZnO interlayer effectively reduces the electron injection barrier between ITO and ZnMgO layers, thereby enhancing electron injection efficiency, promoting carrier recombination, and ultimately improving device performance. The experimental results reveal that ZnSeTe-based all-solution inverted blue QLEDs with the ZnO interlayer achieved a maximum external quantum efficiency of 6.1%, a peak brightness of 1862 cd m−2, and a T50 lifetime of 6.7 h at 1000 cd m−2. This study demonstrates the effectiveness of ZnO interlayer in improving the performance of eco-friendly all-solution inverted QLEDs and provides valuable insights for advancing eco-friendly QLED technology.\",\"PeriodicalId\":8094,\"journal\":{\"name\":\"Applied Physics Letters\",\"volume\":\"9 1\",\"pages\":\"\"},\"PeriodicalIF\":3.6000,\"publicationDate\":\"2025-06-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Applied Physics Letters\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1063/5.0272369\",\"RegionNum\":2,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"PHYSICS, APPLIED\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Physics Letters","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1063/5.0272369","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}

引用次数: 0

摘要

全溶液处理的倒量子点发光二极管（qled）在照明和显示技术中显示出巨大的应用前景。然而，环保蓝色倒转qled的实际部署仍然是一个重大挑战，特别是在提高其发光效率和运行稳定性方面。在此，我们报告了一种基于ZnSeTe量子点的环保，全溶液处理的倒转蓝色qled，在电子传输层内加入ZnO中间层以建立阶梯双层电子传输结构。ZnO中间层有效降低了ITO和ZnMgO层之间的电子注入屏障，从而提高电子注入效率，促进载流子复合，最终提高器件性能。实验结果表明，ZnO夹层znsete基全溶液倒蓝qled的最大外量子效率为6.1%，峰值亮度为1862 cd m−2，在1000 cd m−2下T50寿命为6.7 h。该研究证明了ZnO中间层在提高全溶液倒转QLED性能方面的有效性，并为推进环保型QLED技术提供了有价值的见解。

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Lowering electron injection barrier via stepwise transport layer for high-performance blue inverted ZnSeTe QLEDs

All-solution processed inverted quantum dot light-emitting diodes (QLEDs) have shown great promise for applications in lighting and display technologies. However, the practical deployment of eco-friendly blue inverted QLEDs remains a significant challenge, particularly in enhancing their luminous efficiency and operational stability. Herein, we report an eco-friendly, all-solution processed inverted blue QLEDs based on ZnSeTe quantum-dots, incorporating a ZnO interlayer within the electron transport layer to establish a stepwise double-layer electron transport structure. The ZnO interlayer effectively reduces the electron injection barrier between ITO and ZnMgO layers, thereby enhancing electron injection efficiency, promoting carrier recombination, and ultimately improving device performance. The experimental results reveal that ZnSeTe-based all-solution inverted blue QLEDs with the ZnO interlayer achieved a maximum external quantum efficiency of 6.1%, a peak brightness of 1862 cd m−2, and a T50 lifetime of 6.7 h at 1000 cd m−2. This study demonstrates the effectiveness of ZnO interlayer in improving the performance of eco-friendly all-solution inverted QLEDs and provides valuable insights for advancing eco-friendly QLED technology.

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来源期刊

Applied Physics Letters 物理-物理：应用

CiteScore

6.40

自引率

10.00%

发文量

1821

审稿时长

1.6 months

期刊介绍： Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology. In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics. APL Perspectives are forward-looking invited letters which highlight recent developments or discoveries. Emphasis is placed on very recent developments, potentially disruptive technologies, open questions and possible solutions. They also include a mini-roadmap detailing where the community should direct efforts in order for the phenomena to be viable for application and the challenges associated with meeting that performance threshold. Perspectives are characterized by personal viewpoints and opinions of recognized experts in the field. Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.