Hyeon Ho Seol, Min Jung Chung, Seungwoo Lee, Soo Min Yoo, Jang Hun Choi, Minsik Kim, Chul Soon Choi, Won Tae Jang, Ik Sun Kwon, Woojin Jeon
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Brookite-phase vanadium (IV) oxide formation for semiconductor-to-metal transition free bolometric membrane via atomic layer deposition technique
In this study, we investigated the formation of brookite-phase vanadium (IV) oxide (VO2) thin films, focusing on their potential application in bolometric membranes without semiconductor-to-metal transition (SMT) behavior. Using atomic layer deposition (ALD), we controlled the crystallization of VO2 thin films by varying the deposition temperature from 140 to 250 °C. X-ray diffraction (XRD) and x-ray photoelectron spectroscopy (XPS) analyses revealed that films deposited at 250 °C predominantly crystallized into the brookite phase, while lower temperatures led to monoclinic-phase VO2, which undergoes SMT behavior. Electrical measurements showed that films deposited at 250 °C demonstrated superior bolometric properties with a stable temperature coefficient of resistance (TCR) and minimal 1/f noise, even after thermal stress testing. In contrast, films with higher monoclinic-phase content exhibited significant SMT behavior and degraded performance. These results suggest that brookite-phase VO2 films, free from SMT behavior, are promising candidates for high-performance microbolometer applications.
期刊介绍:
Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology.
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