Vidar Flodgren , Abhijit Das , Joachim E. Sestoft , Nathanael Löfström , David Alcer , Hossein Jeddi , Magnus T. Borgström , Håkan Pettersson , Jesper Nygård , Anders Mikkelsen
{"title":"用于片上原型设计的排列多纳米线电路的柔性制造","authors":"Vidar Flodgren , Abhijit Das , Joachim E. Sestoft , Nathanael Löfström , David Alcer , Hossein Jeddi , Magnus T. Borgström , Håkan Pettersson , Jesper Nygård , Anders Mikkelsen","doi":"10.1016/j.mee.2025.112363","DOIUrl":null,"url":null,"abstract":"<div><div>Circuits of multiple deterministically positioned semiconductor nanowires (NWs) is the basis of many devices for photonic, quantum, or conventional transistor applications. To explore and iterate on the design of larger circuits, the means to quickly place and electrically evaluate NWs at target locations must be developed. We propose and demonstrate a multi-NW circuit building concept on SiO<sub>2</sub>/Si substrates, which enables us to quickly position and orient NW components into pre-designed configurations. Micro-manipulator probes are used to guide the NWs into reactive ion etched trenches, with desired designs, before contact metallization. The positioning works over a wide combination of trench widths and depths. Positioning accuracies are contingent on EBL patterning, precise up to ±10 nm. To demonstrate the concept, we create circuits of InP and InAs NWs with a wide variety of specific orientations. The concept was used to iterate a procedure for creating optimal contacts for InP NW photodiodes. Subsequently, we could fabricate and electrically probe 54 fully operational nano-photodiodes placed on three different samples, from which considerable statistics of diode performance could be obtained. Fabrication steps are directly compatible with conventional Si CMOS architecture and should function for a wide range of NW types. The accuracy and rate of placement combined with high fabrication yields enables proof-of-concept prototyping of complex circuits.</div></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":"300 ","pages":"Article 112363"},"PeriodicalIF":3.1000,"publicationDate":"2025-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Flexible fabrication of aligned multi-nanowire circuits for on-chip prototyping\",\"authors\":\"Vidar Flodgren , Abhijit Das , Joachim E. Sestoft , Nathanael Löfström , David Alcer , Hossein Jeddi , Magnus T. Borgström , Håkan Pettersson , Jesper Nygård , Anders Mikkelsen\",\"doi\":\"10.1016/j.mee.2025.112363\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>Circuits of multiple deterministically positioned semiconductor nanowires (NWs) is the basis of many devices for photonic, quantum, or conventional transistor applications. To explore and iterate on the design of larger circuits, the means to quickly place and electrically evaluate NWs at target locations must be developed. We propose and demonstrate a multi-NW circuit building concept on SiO<sub>2</sub>/Si substrates, which enables us to quickly position and orient NW components into pre-designed configurations. Micro-manipulator probes are used to guide the NWs into reactive ion etched trenches, with desired designs, before contact metallization. The positioning works over a wide combination of trench widths and depths. Positioning accuracies are contingent on EBL patterning, precise up to ±10 nm. To demonstrate the concept, we create circuits of InP and InAs NWs with a wide variety of specific orientations. The concept was used to iterate a procedure for creating optimal contacts for InP NW photodiodes. Subsequently, we could fabricate and electrically probe 54 fully operational nano-photodiodes placed on three different samples, from which considerable statistics of diode performance could be obtained. Fabrication steps are directly compatible with conventional Si CMOS architecture and should function for a wide range of NW types. The accuracy and rate of placement combined with high fabrication yields enables proof-of-concept prototyping of complex circuits.</div></div>\",\"PeriodicalId\":18557,\"journal\":{\"name\":\"Microelectronic Engineering\",\"volume\":\"300 \",\"pages\":\"Article 112363\"},\"PeriodicalIF\":3.1000,\"publicationDate\":\"2025-05-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Microelectronic Engineering\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0167931725000528\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronic Engineering","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0167931725000528","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Flexible fabrication of aligned multi-nanowire circuits for on-chip prototyping
Circuits of multiple deterministically positioned semiconductor nanowires (NWs) is the basis of many devices for photonic, quantum, or conventional transistor applications. To explore and iterate on the design of larger circuits, the means to quickly place and electrically evaluate NWs at target locations must be developed. We propose and demonstrate a multi-NW circuit building concept on SiO2/Si substrates, which enables us to quickly position and orient NW components into pre-designed configurations. Micro-manipulator probes are used to guide the NWs into reactive ion etched trenches, with desired designs, before contact metallization. The positioning works over a wide combination of trench widths and depths. Positioning accuracies are contingent on EBL patterning, precise up to ±10 nm. To demonstrate the concept, we create circuits of InP and InAs NWs with a wide variety of specific orientations. The concept was used to iterate a procedure for creating optimal contacts for InP NW photodiodes. Subsequently, we could fabricate and electrically probe 54 fully operational nano-photodiodes placed on three different samples, from which considerable statistics of diode performance could be obtained. Fabrication steps are directly compatible with conventional Si CMOS architecture and should function for a wide range of NW types. The accuracy and rate of placement combined with high fabrication yields enables proof-of-concept prototyping of complex circuits.
期刊介绍:
Microelectronic Engineering is the premier nanoprocessing, and nanotechnology journal focusing on fabrication of electronic, photonic, bioelectronic, electromechanic and fluidic devices and systems, and their applications in the broad areas of electronics, photonics, energy, life sciences, and environment. It covers also the expanding interdisciplinary field of "more than Moore" and "beyond Moore" integrated nanoelectronics / photonics and micro-/nano-/bio-systems. Through its unique mixture of peer-reviewed articles, reviews, accelerated publications, short and Technical notes, and the latest research news on key developments, Microelectronic Engineering provides comprehensive coverage of this exciting, interdisciplinary and dynamic new field for researchers in academia and professionals in industry.