用电子能谱法直接观察六方氮化硼的光活性中隙电子态

IF 27.4 1区 材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY
Sakal Singla, Pragya Joshi, Gabriel I. López-Morales, Kenji Watanabe, Takashi Taniguchi, Cyrus E. Dreyer, Biswanath Chakraborty
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引用次数: 0

摘要

宽禁带半导体中的光活性点缺陷已被证明对各种量子和纳米级应用具有吸引力。特别是六方氮化硼(hBN)的色心,由于其光谱的可调性、亮度、稳定性和室温操作,最近得到了大量的关注。尽管最近所有的研究,精确检测缺陷引起的中隙电子态(MESs)以及它们与hBN中观测到的发射的同时相关性仍然难以捉摸。直接探测这些MESs为hBN中亚带隙发射缺陷中心的原子识别和光学控制提供了一种强有力的方法。结合光学和电子能谱,在hBN的发射位点上发现了中隙吸收特征的存在,并对潜在的缺陷结构进行了逐个原子的识别。通过第一性原理计算进一步研究了主要由空位和碳/氧取代构成的原子分解缺陷结构,支持了通过电子态密度与观察到的MESs的相关性。这项工作提供了hBN中观测到的可见发射,潜在缺陷结构与其吸收的MESs之间的直接关系,为量子技术中hBN的原子尺度和光学控制开辟了场所。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Direct Observation of Optically Active Mid-Gap Electronic States in Hexagonal Boron Nitride by Electron Spectroscopy

Direct Observation of Optically Active Mid-Gap Electronic States in Hexagonal Boron Nitride by Electron Spectroscopy
Optically active point defects in wide-bandgap semiconductors have been demonstrated to be attractive for a variety of quantum and nanoscale applications. In particular, color centers in hexagonal boron nitride (hBN) have recently gained substantial attention owing to their spectral tunability, brightness, stability, and room-temperature operation. Despite all of the recent studies, precise detection of the defect-induced mid-gap electronic states (MESs) and their simultaneous correlations with the observed emission in hBN remain elusive. Directly probing these MESs provides a powerful approach toward atomic identification and optical control of the defect centers underlying the sub-bandgap emission in hBN. Combining optical and electron spectroscopy, the existence of mid-gap absorptive features is revealed at the emissive sites in hBN, along with an atom-by-atom identification of the underlying defect configuration. The atomically resolved defect structure, primarily constituted by vacancies and carbon/oxygen substitutions, is further studied via first-principles calculations, which support the correlation with the observed MESs through the electronic density of states. This work provides a direct relationship between the observed visible emission in hBN, the underlying defect structure, and its absorptive MESs, opening venues for atomic-scale and optical control in hBN for quantum technology.
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来源期刊
Advanced Materials
Advanced Materials 工程技术-材料科学:综合
CiteScore
43.00
自引率
4.10%
发文量
2182
审稿时长
2 months
期刊介绍: Advanced Materials, one of the world's most prestigious journals and the foundation of the Advanced portfolio, is the home of choice for best-in-class materials science for more than 30 years. Following this fast-growing and interdisciplinary field, we are considering and publishing the most important discoveries on any and all materials from materials scientists, chemists, physicists, engineers as well as health and life scientists and bringing you the latest results and trends in modern materials-related research every week.
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