Emma L. K. Spooner, Rachel C. Kilbride, Jinlong Cai, Kaicheng Shi, Roderick MacKenzie, Elena J. Cassella, Philipp Gutfreund, Russell J. Holmes, Tao Wang, Richard Jones, David G. Lidzey, Andrew J. Parnell
{"title":"揭示有机光伏中的s形IV曲线:dio驱动的垂直偏析的作用","authors":"Emma L. K. Spooner, Rachel C. Kilbride, Jinlong Cai, Kaicheng Shi, Roderick MacKenzie, Elena J. Cassella, Philipp Gutfreund, Russell J. Holmes, Tao Wang, Richard Jones, David G. Lidzey, Andrew J. Parnell","doi":"10.1021/acsami.5c04713","DOIUrl":null,"url":null,"abstract":"Controlling vertical segregation in organic photovoltaics (OPVs) is critical for achieving optimal solar cell performance and stability, requiring careful consideration of a range of factors such as the surface energy and miscibility of components, solvent and solvent additive identity, and film processing methods. In this work, we use neutron reflectivity to compare vertical segregation in two different OPV systems: a fullerene-based system (PBDB-T:PC<sub>71</sub>BM) and a non-fullerene-based system (PBDB-T:ITIC), processed with different amounts of the solvent additive, 1,8-diiodooctane (DIO). Both systems exhibit vertical segregation, with enrichment of the acceptor at the film/hole transport layer interface. However, the segregation is considerably more pronounced in ITIC-based systems, where the enriched interface consists of pure ITIC, compared to a maximum of 67% PC<sub>71</sub>BM by volume in the former system. Prolonging film drying with higher solvent additive content exacerbates segregation in both systems, increasing interfacial acceptor concentration in PC<sub>71</sub>BM systems and broadening the buried interface in ITIC systems. Simulations confirm that extreme vertical segregation in ITIC-based devices induces nonideal ‘s-shaped’ <i>JV</i> curves when the enriched layer is pure and sufficiently thick, as seen in both fresh and aged devices. Our findings highlight that improper vertical segregation not only leads to poor device performance in fresh devices, but gradual segregation can also contribute to morphological degradation and device instabilities over time.","PeriodicalId":5,"journal":{"name":"ACS Applied Materials & Interfaces","volume":"19 1","pages":""},"PeriodicalIF":8.2000,"publicationDate":"2025-05-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Uncovering S-Shaped IV Curves in Organic Photovoltaics: The Role of DIO-Driven Vertical Segregation\",\"authors\":\"Emma L. K. Spooner, Rachel C. Kilbride, Jinlong Cai, Kaicheng Shi, Roderick MacKenzie, Elena J. Cassella, Philipp Gutfreund, Russell J. Holmes, Tao Wang, Richard Jones, David G. Lidzey, Andrew J. Parnell\",\"doi\":\"10.1021/acsami.5c04713\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Controlling vertical segregation in organic photovoltaics (OPVs) is critical for achieving optimal solar cell performance and stability, requiring careful consideration of a range of factors such as the surface energy and miscibility of components, solvent and solvent additive identity, and film processing methods. In this work, we use neutron reflectivity to compare vertical segregation in two different OPV systems: a fullerene-based system (PBDB-T:PC<sub>71</sub>BM) and a non-fullerene-based system (PBDB-T:ITIC), processed with different amounts of the solvent additive, 1,8-diiodooctane (DIO). Both systems exhibit vertical segregation, with enrichment of the acceptor at the film/hole transport layer interface. However, the segregation is considerably more pronounced in ITIC-based systems, where the enriched interface consists of pure ITIC, compared to a maximum of 67% PC<sub>71</sub>BM by volume in the former system. Prolonging film drying with higher solvent additive content exacerbates segregation in both systems, increasing interfacial acceptor concentration in PC<sub>71</sub>BM systems and broadening the buried interface in ITIC systems. Simulations confirm that extreme vertical segregation in ITIC-based devices induces nonideal ‘s-shaped’ <i>JV</i> curves when the enriched layer is pure and sufficiently thick, as seen in both fresh and aged devices. Our findings highlight that improper vertical segregation not only leads to poor device performance in fresh devices, but gradual segregation can also contribute to morphological degradation and device instabilities over time.\",\"PeriodicalId\":5,\"journal\":{\"name\":\"ACS Applied Materials & Interfaces\",\"volume\":\"19 1\",\"pages\":\"\"},\"PeriodicalIF\":8.2000,\"publicationDate\":\"2025-05-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ACS Applied Materials & Interfaces\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1021/acsami.5c04713\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Applied Materials & Interfaces","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1021/acsami.5c04713","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Uncovering S-Shaped IV Curves in Organic Photovoltaics: The Role of DIO-Driven Vertical Segregation
Controlling vertical segregation in organic photovoltaics (OPVs) is critical for achieving optimal solar cell performance and stability, requiring careful consideration of a range of factors such as the surface energy and miscibility of components, solvent and solvent additive identity, and film processing methods. In this work, we use neutron reflectivity to compare vertical segregation in two different OPV systems: a fullerene-based system (PBDB-T:PC71BM) and a non-fullerene-based system (PBDB-T:ITIC), processed with different amounts of the solvent additive, 1,8-diiodooctane (DIO). Both systems exhibit vertical segregation, with enrichment of the acceptor at the film/hole transport layer interface. However, the segregation is considerably more pronounced in ITIC-based systems, where the enriched interface consists of pure ITIC, compared to a maximum of 67% PC71BM by volume in the former system. Prolonging film drying with higher solvent additive content exacerbates segregation in both systems, increasing interfacial acceptor concentration in PC71BM systems and broadening the buried interface in ITIC systems. Simulations confirm that extreme vertical segregation in ITIC-based devices induces nonideal ‘s-shaped’ JV curves when the enriched layer is pure and sufficiently thick, as seen in both fresh and aged devices. Our findings highlight that improper vertical segregation not only leads to poor device performance in fresh devices, but gradual segregation can also contribute to morphological degradation and device instabilities over time.
期刊介绍:
ACS Applied Materials & Interfaces is a leading interdisciplinary journal that brings together chemists, engineers, physicists, and biologists to explore the development and utilization of newly-discovered materials and interfacial processes for specific applications. Our journal has experienced remarkable growth since its establishment in 2009, both in terms of the number of articles published and the impact of the research showcased. We are proud to foster a truly global community, with the majority of published articles originating from outside the United States, reflecting the rapid growth of applied research worldwide.