揭示有机光伏中的s形IV曲线:dio驱动的垂直偏析的作用

IF 8.2 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY
Emma L. K. Spooner, Rachel C. Kilbride, Jinlong Cai, Kaicheng Shi, Roderick MacKenzie, Elena J. Cassella, Philipp Gutfreund, Russell J. Holmes, Tao Wang, Richard Jones, David G. Lidzey, Andrew J. Parnell
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引用次数: 0

摘要

控制有机光伏电池(opv)中的垂直偏析对于实现最佳太阳能电池性能和稳定性至关重要,需要仔细考虑一系列因素,如表面能和组分的混溶性、溶剂和溶剂添加剂的特性以及薄膜加工方法。在这项工作中,我们使用中子反射率来比较两种不同的OPV体系中的垂直偏析:富勒烯基体系(PBDB-T:PC71BM)和非富勒烯基体系(PBDB-T:ITIC),用不同量的溶剂添加剂1,8-二碘辛烷(DIO)处理。两种体系均表现出垂直偏析,在薄膜/空穴传输层界面处受体富集。然而,在基于ITIC的体系中,分离更为明显,其中富集界面由纯ITIC组成,而在前者体系中,PC71BM的体积最大为67%。延长薄膜干燥时间,增加溶剂添加剂含量会加剧两种体系中的分离,增加PC71BM体系中的界面受体浓度,扩大ITIC体系中的埋藏界面。模拟证实,当富集层足够纯且足够厚时,基于itic的器件中的极端垂直偏析会导致非理想的“s形”JV曲线,这在新鲜和老化的器件中都可以看到。我们的研究结果强调,不适当的垂直分离不仅会导致新器件性能差,而且随着时间的推移,逐渐分离也会导致形态退化和器件不稳定。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Uncovering S-Shaped IV Curves in Organic Photovoltaics: The Role of DIO-Driven Vertical Segregation

Uncovering S-Shaped IV Curves in Organic Photovoltaics: The Role of DIO-Driven Vertical Segregation
Controlling vertical segregation in organic photovoltaics (OPVs) is critical for achieving optimal solar cell performance and stability, requiring careful consideration of a range of factors such as the surface energy and miscibility of components, solvent and solvent additive identity, and film processing methods. In this work, we use neutron reflectivity to compare vertical segregation in two different OPV systems: a fullerene-based system (PBDB-T:PC71BM) and a non-fullerene-based system (PBDB-T:ITIC), processed with different amounts of the solvent additive, 1,8-diiodooctane (DIO). Both systems exhibit vertical segregation, with enrichment of the acceptor at the film/hole transport layer interface. However, the segregation is considerably more pronounced in ITIC-based systems, where the enriched interface consists of pure ITIC, compared to a maximum of 67% PC71BM by volume in the former system. Prolonging film drying with higher solvent additive content exacerbates segregation in both systems, increasing interfacial acceptor concentration in PC71BM systems and broadening the buried interface in ITIC systems. Simulations confirm that extreme vertical segregation in ITIC-based devices induces nonideal ‘s-shaped’ JV curves when the enriched layer is pure and sufficiently thick, as seen in both fresh and aged devices. Our findings highlight that improper vertical segregation not only leads to poor device performance in fresh devices, but gradual segregation can also contribute to morphological degradation and device instabilities over time.
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来源期刊
ACS Applied Materials & Interfaces
ACS Applied Materials & Interfaces 工程技术-材料科学:综合
CiteScore
16.00
自引率
6.30%
发文量
4978
审稿时长
1.8 months
期刊介绍: ACS Applied Materials & Interfaces is a leading interdisciplinary journal that brings together chemists, engineers, physicists, and biologists to explore the development and utilization of newly-discovered materials and interfacial processes for specific applications. Our journal has experienced remarkable growth since its establishment in 2009, both in terms of the number of articles published and the impact of the research showcased. We are proud to foster a truly global community, with the majority of published articles originating from outside the United States, reflecting the rapid growth of applied research worldwide.
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