{"title":"脉冲激光沉积技术制备c轴取向SnSb2Te4薄膜热电输运特性研究","authors":"Mingjing Chen, Yangyang Zhen, Zihao Chen, Tianchang Qin, Haixu Liu, Xin Qian, Shufang Wang","doi":"10.1063/5.0265325","DOIUrl":null,"url":null,"abstract":"The van der Waals layered compound SnSb2Te4 has attracted intense attention as a promising thermoelectric material, yet its thin-film thermoelectric performance remains unexplored. In this study, we report the growth and thermoelectric properties of c-axis oriented SnSb2Te4 thin films using pulsed laser deposition technology. Systematic transport measurements revealed the strong correlation between deposition temperature, carrier concentration, and thermoelectric properties. Notably, the film deposited at 275 °C exhibited well-ordered crystalline structures with controlled orientation and superior thermoelectric performance, achieving a remarkable power factor of 8.3 µW cm−1 K−2 and a corresponding zT value of 0.18 at 575 K, demonstrating the great potential application of SnSb2Te4 thin films for micro-thermoelectric devices.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"19 1","pages":""},"PeriodicalIF":3.6000,"publicationDate":"2025-05-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Investigation of thermoelectric transport properties of c-axis oriented SnSb2Te4 thin-film fabricated using pulsed laser deposition technology\",\"authors\":\"Mingjing Chen, Yangyang Zhen, Zihao Chen, Tianchang Qin, Haixu Liu, Xin Qian, Shufang Wang\",\"doi\":\"10.1063/5.0265325\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The van der Waals layered compound SnSb2Te4 has attracted intense attention as a promising thermoelectric material, yet its thin-film thermoelectric performance remains unexplored. In this study, we report the growth and thermoelectric properties of c-axis oriented SnSb2Te4 thin films using pulsed laser deposition technology. Systematic transport measurements revealed the strong correlation between deposition temperature, carrier concentration, and thermoelectric properties. Notably, the film deposited at 275 °C exhibited well-ordered crystalline structures with controlled orientation and superior thermoelectric performance, achieving a remarkable power factor of 8.3 µW cm−1 K−2 and a corresponding zT value of 0.18 at 575 K, demonstrating the great potential application of SnSb2Te4 thin films for micro-thermoelectric devices.\",\"PeriodicalId\":8094,\"journal\":{\"name\":\"Applied Physics Letters\",\"volume\":\"19 1\",\"pages\":\"\"},\"PeriodicalIF\":3.6000,\"publicationDate\":\"2025-05-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Applied Physics Letters\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1063/5.0265325\",\"RegionNum\":2,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"PHYSICS, APPLIED\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Physics Letters","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1063/5.0265325","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
引用次数: 0
摘要
范德华层状化合物SnSb2Te4作为一种有前途的热电材料引起了人们的广泛关注,但其薄膜热电性能仍未得到充分研究。在这项研究中,我们报告了使用脉冲激光沉积技术的c轴取向SnSb2Te4薄膜的生长和热电性能。系统输运测量揭示了沉积温度、载流子浓度和热电性能之间的强相关性。值得注意的是,在275°C下沉积的薄膜具有有序的晶体结构,取向可控,热电性能优越,功率因数达到8.3 μ W cm−1 K−2,相应的zT值在575 K时达到0.18,显示了SnSb2Te4薄膜在微热电器件中的巨大应用潜力。
Investigation of thermoelectric transport properties of c-axis oriented SnSb2Te4 thin-film fabricated using pulsed laser deposition technology
The van der Waals layered compound SnSb2Te4 has attracted intense attention as a promising thermoelectric material, yet its thin-film thermoelectric performance remains unexplored. In this study, we report the growth and thermoelectric properties of c-axis oriented SnSb2Te4 thin films using pulsed laser deposition technology. Systematic transport measurements revealed the strong correlation between deposition temperature, carrier concentration, and thermoelectric properties. Notably, the film deposited at 275 °C exhibited well-ordered crystalline structures with controlled orientation and superior thermoelectric performance, achieving a remarkable power factor of 8.3 µW cm−1 K−2 and a corresponding zT value of 0.18 at 575 K, demonstrating the great potential application of SnSb2Te4 thin films for micro-thermoelectric devices.
期刊介绍:
Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology.
In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics.
APL Perspectives are forward-looking invited letters which highlight recent developments or discoveries. Emphasis is placed on very recent developments, potentially disruptive technologies, open questions and possible solutions. They also include a mini-roadmap detailing where the community should direct efforts in order for the phenomena to be viable for application and the challenges associated with meeting that performance threshold. Perspectives are characterized by personal viewpoints and opinions of recognized experts in the field.
Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.