采用浮动中电平的vm端PAM-3发射机,增强了低功耗存储器接口的信号完整性和能量效率

IF 5.2 1区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC
Chanheum Han;Ki-Soo Lee;Jun-Cheol Lee;Joo-Hyung Chae
{"title":"采用浮动中电平的vm端PAM-3发射机,增强了低功耗存储器接口的信号完整性和能量效率","authors":"Chanheum Han;Ki-Soo Lee;Jun-Cheol Lee;Joo-Hyung Chae","doi":"10.1109/TCSI.2025.3552405","DOIUrl":null,"url":null,"abstract":"This paper introduces a three-level pulse amplitude modulation single-ended transmitter using V<sub>M</sub> (half of <inline-formula> <tex-math>$\\text{V}_{\\mathrm {DDQ}}$ </tex-math></inline-formula>) termination, designed for next-generation low-power memory interfaces. The proposed signaling strategy, based on the V<sub>M</sub> termination, improves signal integrity by reducing signaling current by 41.05% while maintaining the same voltage swing compared to existing V<sub>SS</sub>-terminated structures for low-power memory interfaces. This reduction in signaling current effectively decreases simultaneous switching output noise. Additionally, this approach alleviates the voltage headroom limitation and enables pre-emphasis adoption, resulting in a larger voltage swing and reduced power consumption compared to de-emphasis. The voltage difference between the drain and source of each pull-up and pull-down driver is balanced, achieving a good ratio of level mismatch (RLM). Moreover, the three-step ZQ calibration and transmission gate-based receiver-side V<sub>M</sub> termination help achieve accurate on-resistance and improve output linearity, reducing signal reflection. The prototype chip, fabricated using a 65-nm CMOS process, has an area of 0.0184 mm<sup>2</sup>. It achieves a data rate of 22.5 Gb/s with an energy efficiency of 0.86 pJ/bit and a measured RLM of 99.2%.","PeriodicalId":13039,"journal":{"name":"IEEE Transactions on Circuits and Systems I: Regular Papers","volume":"72 6","pages":"2653-2663"},"PeriodicalIF":5.2000,"publicationDate":"2025-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A VM-Terminated PAM-3 Transmitter Using Floating Middle Level With Enhanced Signal Integrity and Energy Efficiency for Low-Power Memory Interfaces\",\"authors\":\"Chanheum Han;Ki-Soo Lee;Jun-Cheol Lee;Joo-Hyung Chae\",\"doi\":\"10.1109/TCSI.2025.3552405\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper introduces a three-level pulse amplitude modulation single-ended transmitter using V<sub>M</sub> (half of <inline-formula> <tex-math>$\\\\text{V}_{\\\\mathrm {DDQ}}$ </tex-math></inline-formula>) termination, designed for next-generation low-power memory interfaces. The proposed signaling strategy, based on the V<sub>M</sub> termination, improves signal integrity by reducing signaling current by 41.05% while maintaining the same voltage swing compared to existing V<sub>SS</sub>-terminated structures for low-power memory interfaces. This reduction in signaling current effectively decreases simultaneous switching output noise. Additionally, this approach alleviates the voltage headroom limitation and enables pre-emphasis adoption, resulting in a larger voltage swing and reduced power consumption compared to de-emphasis. The voltage difference between the drain and source of each pull-up and pull-down driver is balanced, achieving a good ratio of level mismatch (RLM). Moreover, the three-step ZQ calibration and transmission gate-based receiver-side V<sub>M</sub> termination help achieve accurate on-resistance and improve output linearity, reducing signal reflection. The prototype chip, fabricated using a 65-nm CMOS process, has an area of 0.0184 mm<sup>2</sup>. It achieves a data rate of 22.5 Gb/s with an energy efficiency of 0.86 pJ/bit and a measured RLM of 99.2%.\",\"PeriodicalId\":13039,\"journal\":{\"name\":\"IEEE Transactions on Circuits and Systems I: Regular Papers\",\"volume\":\"72 6\",\"pages\":\"2653-2663\"},\"PeriodicalIF\":5.2000,\"publicationDate\":\"2025-03-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Circuits and Systems I: Regular Papers\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10938983/\",\"RegionNum\":1,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Circuits and Systems I: Regular Papers","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10938983/","RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

本文介绍了一种采用VM ($\text{V}_{\mathrm {DDQ}}$的一半)终端的三电平脉冲调幅单端发射机,设计用于下一代低功耗存储器接口。与现有的低功耗存储接口的vss端接结构相比,该基于VM端接的信令策略在保持相同电压摆幅的同时,将信令电流降低了41.05%,从而提高了信号完整性。这种信号电流的减少有效地降低了同时开关输出噪声。此外,这种方法减轻了电压净空空间的限制,并允许预先强调,与不强调相比,可以产生更大的电压摆动和更低的功耗。每个上拉和下拉驱动器的漏极和源极之间的电压差是平衡的,实现了良好的电平失配比(RLM)。此外,三步ZQ校准和基于传输栅极的接收端VM终止有助于实现准确的导通电阻,提高输出线性度,减少信号反射。该原型芯片采用65纳米CMOS工艺制造,面积为0.0184平方毫米。它的数据速率为22.5 Gb/s,能效为0.86 pJ/bit,实测RLM为99.2%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A VM-Terminated PAM-3 Transmitter Using Floating Middle Level With Enhanced Signal Integrity and Energy Efficiency for Low-Power Memory Interfaces
This paper introduces a three-level pulse amplitude modulation single-ended transmitter using VM (half of $\text{V}_{\mathrm {DDQ}}$ ) termination, designed for next-generation low-power memory interfaces. The proposed signaling strategy, based on the VM termination, improves signal integrity by reducing signaling current by 41.05% while maintaining the same voltage swing compared to existing VSS-terminated structures for low-power memory interfaces. This reduction in signaling current effectively decreases simultaneous switching output noise. Additionally, this approach alleviates the voltage headroom limitation and enables pre-emphasis adoption, resulting in a larger voltage swing and reduced power consumption compared to de-emphasis. The voltage difference between the drain and source of each pull-up and pull-down driver is balanced, achieving a good ratio of level mismatch (RLM). Moreover, the three-step ZQ calibration and transmission gate-based receiver-side VM termination help achieve accurate on-resistance and improve output linearity, reducing signal reflection. The prototype chip, fabricated using a 65-nm CMOS process, has an area of 0.0184 mm2. It achieves a data rate of 22.5 Gb/s with an energy efficiency of 0.86 pJ/bit and a measured RLM of 99.2%.
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来源期刊
IEEE Transactions on Circuits and Systems I: Regular Papers
IEEE Transactions on Circuits and Systems I: Regular Papers 工程技术-工程:电子与电气
CiteScore
9.80
自引率
11.80%
发文量
441
审稿时长
2 months
期刊介绍: TCAS I publishes regular papers in the field specified by the theory, analysis, design, and practical implementations of circuits, and the application of circuit techniques to systems and to signal processing. Included is the whole spectrum from basic scientific theory to industrial applications. The field of interest covered includes: - Circuits: Analog, Digital and Mixed Signal Circuits and Systems - Nonlinear Circuits and Systems, Integrated Sensors, MEMS and Systems on Chip, Nanoscale Circuits and Systems, Optoelectronic - Circuits and Systems, Power Electronics and Systems - Software for Analog-and-Logic Circuits and Systems - Control aspects of Circuits and Systems.
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