Fe2CoGe薄膜中温度与畴态结构的关系

IF 1.9 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Magnetics Pub Date : 2025-03-27 DOI:10.1109/TMAG.2025.3555522

Rajesh Kumar Roul;Bongurala Prakash;S. Narayana Jammalamadaka

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引用次数: 0

摘要

本文研究了Fe2CoGe Heusler合金薄膜在$100~ $ {\circ}$ C ~ $400~ $ {\circ}$ C范围内的室温一阶反转曲线（FORC）分析结果。我们的研究表明，随着Fe2CoGe薄膜退火温度的升高，磁性晶粒之间的静磁相互作用（MIs）减小。开关场分布（SFD）分析进一步支持了这一观察结果。在不同的退火温度下，多畴（MD）结构向涡畴（VD）结构转变明显。随着退火温度的变化，畴态构型的变化可能会提高Fe2CoGe Heusler合金薄膜在未来自旋电子应用中的适用性。

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Correlation Between Temperature and Domain State Configuration in Fe2CoGe Thin Film

We present findings regarding room temperature first-order reversal curve (FORC) analysis of Fe2CoGe Heusler alloy thin films subjected to varying annealing temperatures in the range of

$100~^{\circ }$

C–

$400~^{\circ }$

C. Our study suggests that the magnetostatic interactions (MIs) among magnetic grains decrease with the annealing temperature of Fe2CoGe thin films. This observation is further supported by the analysis of the switching field distribution (SFD). The transformation from multidomain (MD) to vortex domain (VD) structures is evident at different annealing temperatures. The alterations in domain state configuration associated with varied annealing temperatures could potentially enhance the applicability of Fe2CoGe Heusler alloy films for future spintronic applications.

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来源期刊

IEEE Transactions on Magnetics 工程技术-工程：电子与电气

CiteScore

4.00

自引率

14.30%

发文量

565

审稿时长

4.1 months

期刊介绍： Science and technology related to the basic physics and engineering of magnetism, magnetic materials, applied magnetics, magnetic devices, and magnetic data storage. The IEEE Transactions on Magnetics publishes scholarly articles of archival value as well as tutorial expositions and critical reviews of classical subjects and topics of current interest.