利用磁屏蔽提高STT-MRAM在强外磁场环境下的抗扰度

IF 1.9 3区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Abhishek Talapatra;Aritra Kundu;Clarissa Prawoto;Vinayak Bharat Naik;Alban Zaka
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引用次数: 0

摘要

磁随机存取存储器(MRAM)已被证明是取代闪存技术的最佳选择。低功耗以及更高的循环耐久性、更快的速度和在整个汽车温度范围(- 40°C至150°C)内的稳定性是MRAM的关键特点。然而,强磁场环境下的磁抗扰度是目前自旋-传递-扭矩MRAM (STT-MRAM)技术关注的问题之一,其中两个双稳态存储状态之间的磁能屏障在存在外部磁场的情况下减少。虽然不能完全避免MRAM芯片暴露于外部磁场,但使用封装级磁屏蔽可以显着降低芯片处的磁场强度。在本文中,我们考虑了由不同尺寸和距离封装的MRAM芯片的永磁体产生的不同外部磁场环境。我们已经强调了屏蔽设计的重要性,以及根据需要屏蔽的不同外部磁场范围选择屏蔽材料。由于屏蔽层的引入,降低了芯片外部磁场的强度,显著提高了误码率。我们还证明了场源的位置和尺寸在确定整个芯片屏蔽效应的均匀性方面也很重要,通过确定封装芯片对外部磁场的最差角落。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Improving Magnetic Immunity of STT-MRAM in Strong External Magnetic Field Environments Using Magnetic Shield
Magnetic random access memory (MRAM) is proven to be the most eligible candidate to replace the flash technology. Low power consumption along with higher cycling endurance, faster speed, and stability over the entire automotive temperature range (−40 °C to 150 °C) are the key features of MRAM. However, magnetic immunity in the strong magnetic field environments is one of the concerns for the present spin-transfer-torque MRAM (STT-MRAM) technology where the magnetic energy barrier between the two bistable memory states decreases in the presence of an external magnetic field. While the exposure of the MRAM chip to the external magnetic field cannot be avoided completely, the magnitude of the field at the chip can be significantly reduced using a package-level magnetic shield. In this article, we have considered different external magnetic field environments created by permanent magnets of different dimensions and distances from the packaged MRAM chip. We have emphasized the importance of the design of the shield together with the choice of shield materials based on different ranges of external magnetic fields to be shielded. The reduction in the magnitude of the external magnetic field at the chip due to the introduction of shield improves the bit-error-rate (BER) significantly. We have also demonstrated that the position and dimensions of the field source are also important in determining the uniformity of the shielding effect throughout the chip by identifying the worst corner of the packaged chip against the external magnetic field.
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来源期刊
IEEE Transactions on Magnetics
IEEE Transactions on Magnetics 工程技术-工程:电子与电气
CiteScore
4.00
自引率
14.30%
发文量
565
审稿时长
4.1 months
期刊介绍: Science and technology related to the basic physics and engineering of magnetism, magnetic materials, applied magnetics, magnetic devices, and magnetic data storage. The IEEE Transactions on Magnetics publishes scholarly articles of archival value as well as tutorial expositions and critical reviews of classical subjects and topics of current interest.
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