碱金属吸附法优化InGaN纳米线光电性能

IF 6 2区工程技术 Q2 ENERGY & FUELS

Solar Energy Pub Date : 2025-05-29 DOI:10.1016/j.solener.2025.113596

Zhihao Cao , Lei Liu , Zhidong Wang , Jian Tian , Xingyue Zhangyang , Hongchang Cheng , Xin Guo

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引用次数: 0

摘要

我们利用第一性原理对碱金属原子（Li, Na， K, Cs）吸附InGaN纳米线进行了研究。所有被碱金属吸附的InGaN纳米线都是稳定的。碱金属吸附可以有效调节InGaN纳米线的能带。带隙和功函数均有不同程度的减小。InGaN纳米线的电子发射性能得到了改善。其中，Cs原子对电子性能的改善效果最为明显。InGaN纳米线具有极低的反射率。此外，带隙的减小导致了截止波长的红移。其吸收系数在近红外区增大。提高了InGaN纳米线的整体吸收率。通过电学和光学性质分析，我们可以发现Cs原子对提高InGaN纳米线的光电发射性能的影响最为显著。本研究将为制备碱金属吸附InGaN纳米线提供理论依据。

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Optimization of photoelectric properties of InGaN nanowires by alkali metal adsorption

We conduct the study on InGaN nanowires adsorbed by alkali metal atoms (Li, Na, K, Cs) using first principles. All InGaN nanowires adsorbed by alkali metals are stable. Energy band of InGaN nanowires can be effectively adjusted by alkali metal adsorption. Bandgap and work function are reduced to different degrees. The electron emission performance of InGaN nanowires has been improved. Among them, Cs atom has the most obvious effect on improvement of electronic properties. InGaN nanowires exhibit extremely low reflectance. In addition, the reduction of bandgap results in a cut-off wavelength redshift. Its absorption coefficient increases in near-infrared region. The overall absorption rate of InGaN nanowires has been improved. Through the analysis of electrical and optical properties, we can find that Cs atom has the most significant effect on improving photoemission performance of InGaN nanowires. This study will provide a theoretical basis for the preparation of InGaN nanowires adsorbed by alkali metals.

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来源期刊

Solar Energy 工程技术-能源与燃料

CiteScore

13.90

自引率

9.00%

发文量

审稿时长

47 days

期刊介绍： Solar Energy welcomes manuscripts presenting information not previously published in journals on any aspect of solar energy research, development, application, measurement or policy. The term "solar energy" in this context includes the indirect uses such as wind energy and biomass