Digital organic memristor based on P3HT doped with organic small molecules TmPyPB/ TpPyPB

Digital organic memristors have potential in the field of data storage technology due to their advantages of superintegration, simple preparation process, flexibility and low power consumption. However, it's difficult to achieve low operating voltages while maintaining strong endurance. We fabricated digital organic memristors based on poly(3-hexylthiophene) (P3HT) doped with 1,3,5-tri(m-pyridin-3-yl-phenyl) benzene (TmPyPB) or 1,3,5-tris(p-pyridin-3-yl-phenyl) benzene (TpPyPB), which achieve both strong endurance and low operating voltages. The device exhibits a current on/off ratio (I_on/off) of 10⁴, long retention time of 10⁴ s, strong endurance of 250 cycles, and response time of 500 ms. Their set voltage (V_set) and reset voltage (V_reset) were frozen in 1.85 V and −2.69 V, respectively. The resistive switching mechanism was the trapping and detrapping process of charge trap induced by TmPyPB or TpPyPB. In addition, we constructed a 10 × 10 memristor array, realized alphabetic information storage and basic logic operations, demonstrate the device has good reliability, current stability, and uniform performance. This study provides an effective solution for realizing digital organic memristors with high durability and low operating voltage.