{"title":"具有完全磁控范德华多铁隧道结的巨非易失多态电阻","authors":"Zhi Yan*, Xujin Zhang, Jianhua Xiao, Cheng Fang and Xiaohong Xu*, ","doi":"10.1021/acs.nanolett.5c0044010.1021/acs.nanolett.5c00440","DOIUrl":null,"url":null,"abstract":"<p >Ferroelectric polarization switching in electrically controlled van der Waals multiferroic tunnel junctions (vdW-MFTJs) causes atomic migration, compromising device stability and fatigue resistance. Here, we propose fully magnetically controlled vdW-MFTJs based on a CrBr<sub>3</sub>/MnPSe<sub>3</sub>/CrBr<sub>3</sub> vertical heterostructure, achieving ferroelectric polarization reversal without atomic migration. First-principles calculations reveal that integrating PtTe<sub>2</sub>/alkali-metal (Li/Na/K)-doped/intercalated CrBr<sub>3</sub> electrodes enables exceptional performance, with a maximum tunneling magnetoresistance (TMR) of 8.1 × 10<sup>5</sup>% and tunneling electroresistance (TER) of 2499%. Applying an external bias voltage enhances the TMR to 3.6 × 10<sup>7</sup>% and the TER to 9990%. A pronounced negative differential resistance (NDR) effect is observed with a record peak-to-valley ratio (PVR) of 9.55 × 10<sup>9</sup>% for vertical tunnel junctions. The spin-filtering channels are flexibly controlled by the magnetization direction of the magnetic free layer, achieving perfect spin-filtering over a broad bias range. This work paves the way for the experimental exploration of fully magnetically controlled vdW-MFTJs.</p>","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"25 21","pages":"8473–8479 8473–8479"},"PeriodicalIF":9.1000,"publicationDate":"2025-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Giant Nonvolatile Multistate Resistance with Fully Magnetically Controlled van der Waals Multiferroic Tunnel Junctions\",\"authors\":\"Zhi Yan*, Xujin Zhang, Jianhua Xiao, Cheng Fang and Xiaohong Xu*, \",\"doi\":\"10.1021/acs.nanolett.5c0044010.1021/acs.nanolett.5c00440\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p >Ferroelectric polarization switching in electrically controlled van der Waals multiferroic tunnel junctions (vdW-MFTJs) causes atomic migration, compromising device stability and fatigue resistance. Here, we propose fully magnetically controlled vdW-MFTJs based on a CrBr<sub>3</sub>/MnPSe<sub>3</sub>/CrBr<sub>3</sub> vertical heterostructure, achieving ferroelectric polarization reversal without atomic migration. First-principles calculations reveal that integrating PtTe<sub>2</sub>/alkali-metal (Li/Na/K)-doped/intercalated CrBr<sub>3</sub> electrodes enables exceptional performance, with a maximum tunneling magnetoresistance (TMR) of 8.1 × 10<sup>5</sup>% and tunneling electroresistance (TER) of 2499%. Applying an external bias voltage enhances the TMR to 3.6 × 10<sup>7</sup>% and the TER to 9990%. A pronounced negative differential resistance (NDR) effect is observed with a record peak-to-valley ratio (PVR) of 9.55 × 10<sup>9</sup>% for vertical tunnel junctions. The spin-filtering channels are flexibly controlled by the magnetization direction of the magnetic free layer, achieving perfect spin-filtering over a broad bias range. This work paves the way for the experimental exploration of fully magnetically controlled vdW-MFTJs.</p>\",\"PeriodicalId\":53,\"journal\":{\"name\":\"Nano Letters\",\"volume\":\"25 21\",\"pages\":\"8473–8479 8473–8479\"},\"PeriodicalIF\":9.1000,\"publicationDate\":\"2025-05-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Nano Letters\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://pubs.acs.org/doi/10.1021/acs.nanolett.5c00440\",\"RegionNum\":1,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"CHEMISTRY, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nano Letters","FirstCategoryId":"88","ListUrlMain":"https://pubs.acs.org/doi/10.1021/acs.nanolett.5c00440","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
Giant Nonvolatile Multistate Resistance with Fully Magnetically Controlled van der Waals Multiferroic Tunnel Junctions
Ferroelectric polarization switching in electrically controlled van der Waals multiferroic tunnel junctions (vdW-MFTJs) causes atomic migration, compromising device stability and fatigue resistance. Here, we propose fully magnetically controlled vdW-MFTJs based on a CrBr3/MnPSe3/CrBr3 vertical heterostructure, achieving ferroelectric polarization reversal without atomic migration. First-principles calculations reveal that integrating PtTe2/alkali-metal (Li/Na/K)-doped/intercalated CrBr3 electrodes enables exceptional performance, with a maximum tunneling magnetoresistance (TMR) of 8.1 × 105% and tunneling electroresistance (TER) of 2499%. Applying an external bias voltage enhances the TMR to 3.6 × 107% and the TER to 9990%. A pronounced negative differential resistance (NDR) effect is observed with a record peak-to-valley ratio (PVR) of 9.55 × 109% for vertical tunnel junctions. The spin-filtering channels are flexibly controlled by the magnetization direction of the magnetic free layer, achieving perfect spin-filtering over a broad bias range. This work paves the way for the experimental exploration of fully magnetically controlled vdW-MFTJs.
期刊介绍：
Nano Letters serves as a dynamic platform for promptly disseminating original results in fundamental, applied, and emerging research across all facets of nanoscience and nanotechnology. A pivotal criterion for inclusion within Nano Letters is the convergence of at least two different areas or disciplines, ensuring a rich interdisciplinary scope. The journal is dedicated to fostering exploration in diverse areas, including:
- Experimental and theoretical findings on physical, chemical, and biological phenomena at the nanoscale
- Synthesis, characterization, and processing of organic, inorganic, polymer, and hybrid nanomaterials through physical, chemical, and biological methodologies
- Modeling and simulation of synthetic, assembly, and interaction processes
- Realization of integrated nanostructures and nano-engineered devices exhibiting advanced performance
- Applications of nanoscale materials in living and environmental systems
Nano Letters is committed to advancing and showcasing groundbreaking research that intersects various domains, fostering innovation and collaboration in the ever-evolving field of nanoscience and nanotechnology.
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