{"title":"M/MoS2 (M = Ti, Al, Mo, Ag)纳米膜的磁控溅射制备及磁控溅射功率和中低温退火的影响","authors":"Fen Xiong,Chunquan Liu,Fang He,Xin He,Jianquan Sang,Juangang Zhao,Jianping Huang,Jiwei Chen,Songtao Cai,Siyu Jiang,Hu Chen,Jun Wu","doi":"10.1021/acs.langmuir.5c01406","DOIUrl":null,"url":null,"abstract":"Molybdenum disulfide (MoS2) has been widely applied in photocatalysts, field-effect transistors (FETs), and solar cells in virtue of its high specific surface area and superior carrier mobility. Nevertheless, conventional MoS2-based FETs involve Au and Ag as the electrode materials, resulting in a high manufacturing cost. More importantly, conventional preparation methods (e.g., chemical vapor deposition) require a high-temperature process and transfer of MoS2, as well as subsequent electrode deposition, for device fabrication, while transfer of MoS2 tends to cause secondary contamination. In this study, M/MoS2 (M = Al, Ti, Mo, Ag) nanofilms were prepared by magnetron sputtering at room temperature. Herein, cost-effective electrode metals were used as the electrodes, and the transfer of MoS2 is avoided. Meanwhile, the effects of key factors, including the power of magnetron sputtering and postsputtering annealing, on the electrical performance of as-prepared M/MoS2 nanofilms were explored. The results demonstrated that the power of magnetron sputtering and medium- and low-temperature annealing significantly affected film morphology (e.g., particle size and surface roughness) and structure (e.g., crystallinity and structural integrity). Specifically, the resistivities of metal-semiconductor contacts of M/MoS2 increased and then decreased as the power of magnetron sputtering increased; medium/low-temperature annealing led to decreased electrical resistivity at the metal-semiconductor contact of M/MoS2. Additionally, the M metal had a significant influence on the electrical performance of M/MoS2. Among the as-prepared composites, Mo/MoS2 exhibited the lowest contact resistance, making Mo most suitable for the electrode in MoS2-based electronic devices. This study provides insights for the preparation of large-area M/MoS2 nanofilms with improved electrical performances by cost-effective magnetron sputtering.","PeriodicalId":50,"journal":{"name":"Langmuir","volume":"58 1","pages":""},"PeriodicalIF":3.7000,"publicationDate":"2025-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"M/MoS2 (M = Ti, Al, Mo, Ag) Nanofilms: Preparation by Magnetron Sputtering and Effects of Power of Magnetron Sputtering and Medium/Low-Temperature Annealing.\",\"authors\":\"Fen Xiong,Chunquan Liu,Fang He,Xin He,Jianquan Sang,Juangang Zhao,Jianping Huang,Jiwei Chen,Songtao Cai,Siyu Jiang,Hu Chen,Jun Wu\",\"doi\":\"10.1021/acs.langmuir.5c01406\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Molybdenum disulfide (MoS2) has been widely applied in photocatalysts, field-effect transistors (FETs), and solar cells in virtue of its high specific surface area and superior carrier mobility. Nevertheless, conventional MoS2-based FETs involve Au and Ag as the electrode materials, resulting in a high manufacturing cost. More importantly, conventional preparation methods (e.g., chemical vapor deposition) require a high-temperature process and transfer of MoS2, as well as subsequent electrode deposition, for device fabrication, while transfer of MoS2 tends to cause secondary contamination. In this study, M/MoS2 (M = Al, Ti, Mo, Ag) nanofilms were prepared by magnetron sputtering at room temperature. Herein, cost-effective electrode metals were used as the electrodes, and the transfer of MoS2 is avoided. Meanwhile, the effects of key factors, including the power of magnetron sputtering and postsputtering annealing, on the electrical performance of as-prepared M/MoS2 nanofilms were explored. The results demonstrated that the power of magnetron sputtering and medium- and low-temperature annealing significantly affected film morphology (e.g., particle size and surface roughness) and structure (e.g., crystallinity and structural integrity). Specifically, the resistivities of metal-semiconductor contacts of M/MoS2 increased and then decreased as the power of magnetron sputtering increased; medium/low-temperature annealing led to decreased electrical resistivity at the metal-semiconductor contact of M/MoS2. Additionally, the M metal had a significant influence on the electrical performance of M/MoS2. Among the as-prepared composites, Mo/MoS2 exhibited the lowest contact resistance, making Mo most suitable for the electrode in MoS2-based electronic devices. This study provides insights for the preparation of large-area M/MoS2 nanofilms with improved electrical performances by cost-effective magnetron sputtering.\",\"PeriodicalId\":50,\"journal\":{\"name\":\"Langmuir\",\"volume\":\"58 1\",\"pages\":\"\"},\"PeriodicalIF\":3.7000,\"publicationDate\":\"2025-05-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Langmuir\",\"FirstCategoryId\":\"92\",\"ListUrlMain\":\"https://doi.org/10.1021/acs.langmuir.5c01406\",\"RegionNum\":2,\"RegionCategory\":\"化学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"CHEMISTRY, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Langmuir","FirstCategoryId":"92","ListUrlMain":"https://doi.org/10.1021/acs.langmuir.5c01406","RegionNum":2,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
M/MoS2 (M = Ti, Al, Mo, Ag) Nanofilms: Preparation by Magnetron Sputtering and Effects of Power of Magnetron Sputtering and Medium/Low-Temperature Annealing.
Molybdenum disulfide (MoS2) has been widely applied in photocatalysts, field-effect transistors (FETs), and solar cells in virtue of its high specific surface area and superior carrier mobility. Nevertheless, conventional MoS2-based FETs involve Au and Ag as the electrode materials, resulting in a high manufacturing cost. More importantly, conventional preparation methods (e.g., chemical vapor deposition) require a high-temperature process and transfer of MoS2, as well as subsequent electrode deposition, for device fabrication, while transfer of MoS2 tends to cause secondary contamination. In this study, M/MoS2 (M = Al, Ti, Mo, Ag) nanofilms were prepared by magnetron sputtering at room temperature. Herein, cost-effective electrode metals were used as the electrodes, and the transfer of MoS2 is avoided. Meanwhile, the effects of key factors, including the power of magnetron sputtering and postsputtering annealing, on the electrical performance of as-prepared M/MoS2 nanofilms were explored. The results demonstrated that the power of magnetron sputtering and medium- and low-temperature annealing significantly affected film morphology (e.g., particle size and surface roughness) and structure (e.g., crystallinity and structural integrity). Specifically, the resistivities of metal-semiconductor contacts of M/MoS2 increased and then decreased as the power of magnetron sputtering increased; medium/low-temperature annealing led to decreased electrical resistivity at the metal-semiconductor contact of M/MoS2. Additionally, the M metal had a significant influence on the electrical performance of M/MoS2. Among the as-prepared composites, Mo/MoS2 exhibited the lowest contact resistance, making Mo most suitable for the electrode in MoS2-based electronic devices. This study provides insights for the preparation of large-area M/MoS2 nanofilms with improved electrical performances by cost-effective magnetron sputtering.
期刊介绍:
Langmuir is an interdisciplinary journal publishing articles in the following subject categories:
Colloids: surfactants and self-assembly, dispersions, emulsions, foams
Interfaces: adsorption, reactions, films, forces
Biological Interfaces: biocolloids, biomolecular and biomimetic materials
Materials: nano- and mesostructured materials, polymers, gels, liquid crystals
Electrochemistry: interfacial charge transfer, charge transport, electrocatalysis, electrokinetic phenomena, bioelectrochemistry
Devices and Applications: sensors, fluidics, patterning, catalysis, photonic crystals
However, when high-impact, original work is submitted that does not fit within the above categories, decisions to accept or decline such papers will be based on one criteria: What Would Irving Do?
Langmuir ranks #2 in citations out of 136 journals in the category of Physical Chemistry with 113,157 total citations. The journal received an Impact Factor of 4.384*.
This journal is also indexed in the categories of Materials Science (ranked #1) and Multidisciplinary Chemistry (ranked #5).