Yoon Hee Jang, Youngseok Lee, Hyeon Sik Seo, Haram Lee, Kyoung-jin Lim, Jung-Kun Lee, Jaeyeong Heo, Inho Kim, Doh-Kwon Lee
{"title":"牺牲层概念界面工程,用于强健、无损的钙钛矿/硅串联太阳能电池单片集成,可获得0.813的高填充系数","authors":"Yoon Hee Jang, Youngseok Lee, Hyeon Sik Seo, Haram Lee, Kyoung-jin Lim, Jung-Kun Lee, Jaeyeong Heo, Inho Kim, Doh-Kwon Lee","doi":"10.1186/s40580-025-00492-3","DOIUrl":null,"url":null,"abstract":"<div><p>Efficient monolithic perovskite/Si tandem solar cells require a robust recombination junction (RJ) with excellent electrical and optical properties. This study introduces an interface engineering method using an organic sacrificial layer to enable effective monolithic integration. An ultrathin layer of poly(3,4-ethylene-dioxythiophene):polystyrene sulfonate (PEDOT:PSS) is inserted between the transparent conductive oxide recombination layer and the hole transport layer (HTL) of a methylammonium lead iodide (MAPbI<sub>3</sub>)-based perovskite top cell. This layer restores junction functionality and enables charge transfer between sub-cells via efficient carrier recombination at the RJ, which electrically connects the two cells. Acting as a sacrificial layer, PEDOT:PSS temporarily prevents resistive SiO<sub><i>x</i></sub> formation and improves interface quality. High-resolution transmission electron microscopy and X-ray photoelectron spectroscopy confirm suppression of SiO<sub><i>x</i></sub> growth during HTL annealing. Moreover, the Cu-doped NiO<sub><i>x</i></sub> HTL fabrication method proves critical, where process optimization improves electrical contact. Combined with PEDOT:PSS interface engineering, these enhancements promote efficient recombination by tuning interfacial energy levels and increasing band bending at the RJ. As a result, tandem devices comprising an aluminum back-surface field <i>p</i>-type homojunction Si bottom cell and a <i>p-i-n</i> perovskite top cell achieve 21.95% power conversion efficiency and an 81.3% fill factor —among the highest reported for monolithic perovskite/Si tandem solar cells.</p></div>","PeriodicalId":712,"journal":{"name":"Nano Convergence","volume":"12 1","pages":""},"PeriodicalIF":13.4000,"publicationDate":"2025-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://nanoconvergencejournal.springeropen.com/counter/pdf/10.1186/s40580-025-00492-3","citationCount":"0","resultStr":"{\"title\":\"Sacrificial layer concept interface engineering for robust, lossless monolithic integration of perovskite/Si tandem solar cells yielding high fill factor of 0.813\",\"authors\":\"Yoon Hee Jang, Youngseok Lee, Hyeon Sik Seo, Haram Lee, Kyoung-jin Lim, Jung-Kun Lee, Jaeyeong Heo, Inho Kim, Doh-Kwon Lee\",\"doi\":\"10.1186/s40580-025-00492-3\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Efficient monolithic perovskite/Si tandem solar cells require a robust recombination junction (RJ) with excellent electrical and optical properties. 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Sacrificial layer concept interface engineering for robust, lossless monolithic integration of perovskite/Si tandem solar cells yielding high fill factor of 0.813
Efficient monolithic perovskite/Si tandem solar cells require a robust recombination junction (RJ) with excellent electrical and optical properties. This study introduces an interface engineering method using an organic sacrificial layer to enable effective monolithic integration. An ultrathin layer of poly(3,4-ethylene-dioxythiophene):polystyrene sulfonate (PEDOT:PSS) is inserted between the transparent conductive oxide recombination layer and the hole transport layer (HTL) of a methylammonium lead iodide (MAPbI3)-based perovskite top cell. This layer restores junction functionality and enables charge transfer between sub-cells via efficient carrier recombination at the RJ, which electrically connects the two cells. Acting as a sacrificial layer, PEDOT:PSS temporarily prevents resistive SiOx formation and improves interface quality. High-resolution transmission electron microscopy and X-ray photoelectron spectroscopy confirm suppression of SiOx growth during HTL annealing. Moreover, the Cu-doped NiOx HTL fabrication method proves critical, where process optimization improves electrical contact. Combined with PEDOT:PSS interface engineering, these enhancements promote efficient recombination by tuning interfacial energy levels and increasing band bending at the RJ. As a result, tandem devices comprising an aluminum back-surface field p-type homojunction Si bottom cell and a p-i-n perovskite top cell achieve 21.95% power conversion efficiency and an 81.3% fill factor —among the highest reported for monolithic perovskite/Si tandem solar cells.
期刊介绍:
Nano Convergence is an internationally recognized, peer-reviewed, and interdisciplinary journal designed to foster effective communication among scientists spanning diverse research areas closely aligned with nanoscience and nanotechnology. Dedicated to encouraging the convergence of technologies across the nano- to microscopic scale, the journal aims to unveil novel scientific domains and cultivate fresh research prospects.
Operating on a single-blind peer-review system, Nano Convergence ensures transparency in the review process, with reviewers cognizant of authors' names and affiliations while maintaining anonymity in the feedback provided to authors.