Impact attenuation mechanism of single/double-layer potting structures of MEMS devices under continuous double-pulse impact

High-overload shocks are very likely to cause damage to the microstructure of MEMS devices, especially the continuous multiple high-overload shocks generated by the penetration of the multilayer target environment pose more stringent challenges to its protective structure. In this study, the kinetic response model of the protective structure under single-pulse and continuous double-pulse impact is established, and a continuous double-pulse high overload impact test impact platform based on the sleeve-type bullet is constructed, and the protective performance of the multi-layer structure under multi-pulse is analyzed based on the acceleration decay ratio, and the results show that the protective performance of the structure has a positive correlation with its thickness, and it is not sensitive to the change of the load of the first impact; the first impact under double-pulse impact will cause damage to the microstructure through the superposition of the second impact. The first impact under double-pulse impact will cause an increase in the overload amplitude of the second impact through superposition; compared with the single-layer structure, the acceleration attenuation ratio of the double-layer structure can be increased by up to 26.13%, among which the epoxy-polyurethane combination has the best protection performance, with an acceleration attenuation ratio of up to 44.68%. This work provides a robust theoretical foundation and experimental basis for the reliable operation of MEMS devices, as well as for the design of protective structures in extreme environments.