Seonghoon Han , Yeongjun Son , Sehwan Song , Jisung Lee , Jong-Seong Bae , Anh Tuan Thanh Pham , Thang Bach Phan , Jeong Hwan Kim , Jong Mok Ok , Dooyong Lee , Sungkyun Park
{"title":"非晶ITO薄膜中电学和结构变化的相关性","authors":"Seonghoon Han , Yeongjun Son , Sehwan Song , Jisung Lee , Jong-Seong Bae , Anh Tuan Thanh Pham , Thang Bach Phan , Jeong Hwan Kim , Jong Mok Ok , Dooyong Lee , Sungkyun Park","doi":"10.1016/j.vacuum.2025.114441","DOIUrl":null,"url":null,"abstract":"<div><div>We investigated the temperature-dependent resistance, structural properties, and chemical state of amorphous ITO film during annealing under vacuum using <em>in-situ</em> analyses. <em>In-situ</em> resistance measurement revealed a sharp increase in resistance, reaching a maximum at approximately 180 °C and decreasing with a further increase in annealing temperature. <em>In-situ</em> X-ray diffraction confirmed the onset of crystallization of the amorphous ITO film at the temperature where the resistivity increased sharply. From the <em>in-situ</em> XPS analysis, we found no change in chemical states, such as oxygen vacancy or the formation of Sn<sup>4+</sup>. In the Hall effect measurement, we confirmed a significant decrease in mobility at the ITO film annealed in vacuum at 175 °C. This indicates the grain boundaries formed by the crystallization of ITO increase the electron scattering, causing a sharp increase in resistance at 180 °C. Our findings suggest that structural changes primarily drove the change in electrical properties of amorphous ITO during annealing. This study highlights the importance of real-time monitoring in understanding the dynamic change in ITO film and provides a comprehensive understanding of the structural and electrical transitions during crystallization.</div></div>","PeriodicalId":23559,"journal":{"name":"Vacuum","volume":"239 ","pages":"Article 114441"},"PeriodicalIF":3.8000,"publicationDate":"2025-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Correlation between electrical and structural changes in amorphous ITO films\",\"authors\":\"Seonghoon Han , Yeongjun Son , Sehwan Song , Jisung Lee , Jong-Seong Bae , Anh Tuan Thanh Pham , Thang Bach Phan , Jeong Hwan Kim , Jong Mok Ok , Dooyong Lee , Sungkyun Park\",\"doi\":\"10.1016/j.vacuum.2025.114441\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>We investigated the temperature-dependent resistance, structural properties, and chemical state of amorphous ITO film during annealing under vacuum using <em>in-situ</em> analyses. <em>In-situ</em> resistance measurement revealed a sharp increase in resistance, reaching a maximum at approximately 180 °C and decreasing with a further increase in annealing temperature. <em>In-situ</em> X-ray diffraction confirmed the onset of crystallization of the amorphous ITO film at the temperature where the resistivity increased sharply. From the <em>in-situ</em> XPS analysis, we found no change in chemical states, such as oxygen vacancy or the formation of Sn<sup>4+</sup>. In the Hall effect measurement, we confirmed a significant decrease in mobility at the ITO film annealed in vacuum at 175 °C. This indicates the grain boundaries formed by the crystallization of ITO increase the electron scattering, causing a sharp increase in resistance at 180 °C. Our findings suggest that structural changes primarily drove the change in electrical properties of amorphous ITO during annealing. This study highlights the importance of real-time monitoring in understanding the dynamic change in ITO film and provides a comprehensive understanding of the structural and electrical transitions during crystallization.</div></div>\",\"PeriodicalId\":23559,\"journal\":{\"name\":\"Vacuum\",\"volume\":\"239 \",\"pages\":\"Article 114441\"},\"PeriodicalIF\":3.8000,\"publicationDate\":\"2025-05-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Vacuum\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0042207X25004312\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Vacuum","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0042207X25004312","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Correlation between electrical and structural changes in amorphous ITO films
We investigated the temperature-dependent resistance, structural properties, and chemical state of amorphous ITO film during annealing under vacuum using in-situ analyses. In-situ resistance measurement revealed a sharp increase in resistance, reaching a maximum at approximately 180 °C and decreasing with a further increase in annealing temperature. In-situ X-ray diffraction confirmed the onset of crystallization of the amorphous ITO film at the temperature where the resistivity increased sharply. From the in-situ XPS analysis, we found no change in chemical states, such as oxygen vacancy or the formation of Sn4+. In the Hall effect measurement, we confirmed a significant decrease in mobility at the ITO film annealed in vacuum at 175 °C. This indicates the grain boundaries formed by the crystallization of ITO increase the electron scattering, causing a sharp increase in resistance at 180 °C. Our findings suggest that structural changes primarily drove the change in electrical properties of amorphous ITO during annealing. This study highlights the importance of real-time monitoring in understanding the dynamic change in ITO film and provides a comprehensive understanding of the structural and electrical transitions during crystallization.
期刊介绍:
Vacuum is an international rapid publications journal with a focus on short communication. All papers are peer-reviewed, with the review process for short communication geared towards very fast turnaround times. The journal also published full research papers, thematic issues and selected papers from leading conferences.
A report in Vacuum should represent a major advance in an area that involves a controlled environment at pressures of one atmosphere or below.
The scope of the journal includes:
1. Vacuum; original developments in vacuum pumping and instrumentation, vacuum measurement, vacuum gas dynamics, gas-surface interactions, surface treatment for UHV applications and low outgassing, vacuum melting, sintering, and vacuum metrology. Technology and solutions for large-scale facilities (e.g., particle accelerators and fusion devices). New instrumentation ( e.g., detectors and electron microscopes).
2. Plasma science; advances in PVD, CVD, plasma-assisted CVD, ion sources, deposition processes and analysis.
3. Surface science; surface engineering, surface chemistry, surface analysis, crystal growth, ion-surface interactions and etching, nanometer-scale processing, surface modification.
4. Materials science; novel functional or structural materials. Metals, ceramics, and polymers. Experiments, simulations, and modelling for understanding structure-property relationships. Thin films and coatings. Nanostructures and ion implantation.