非晶ITO薄膜中电学和结构变化的相关性

IF 3.8 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Seonghoon Han , Yeongjun Son , Sehwan Song , Jisung Lee , Jong-Seong Bae , Anh Tuan Thanh Pham , Thang Bach Phan , Jeong Hwan Kim , Jong Mok Ok , Dooyong Lee , Sungkyun Park
{"title":"非晶ITO薄膜中电学和结构变化的相关性","authors":"Seonghoon Han ,&nbsp;Yeongjun Son ,&nbsp;Sehwan Song ,&nbsp;Jisung Lee ,&nbsp;Jong-Seong Bae ,&nbsp;Anh Tuan Thanh Pham ,&nbsp;Thang Bach Phan ,&nbsp;Jeong Hwan Kim ,&nbsp;Jong Mok Ok ,&nbsp;Dooyong Lee ,&nbsp;Sungkyun Park","doi":"10.1016/j.vacuum.2025.114441","DOIUrl":null,"url":null,"abstract":"<div><div>We investigated the temperature-dependent resistance, structural properties, and chemical state of amorphous ITO film during annealing under vacuum using <em>in-situ</em> analyses. <em>In-situ</em> resistance measurement revealed a sharp increase in resistance, reaching a maximum at approximately 180 °C and decreasing with a further increase in annealing temperature. <em>In-situ</em> X-ray diffraction confirmed the onset of crystallization of the amorphous ITO film at the temperature where the resistivity increased sharply. From the <em>in-situ</em> XPS analysis, we found no change in chemical states, such as oxygen vacancy or the formation of Sn<sup>4+</sup>. In the Hall effect measurement, we confirmed a significant decrease in mobility at the ITO film annealed in vacuum at 175 °C. This indicates the grain boundaries formed by the crystallization of ITO increase the electron scattering, causing a sharp increase in resistance at 180 °C. Our findings suggest that structural changes primarily drove the change in electrical properties of amorphous ITO during annealing. This study highlights the importance of real-time monitoring in understanding the dynamic change in ITO film and provides a comprehensive understanding of the structural and electrical transitions during crystallization.</div></div>","PeriodicalId":23559,"journal":{"name":"Vacuum","volume":"239 ","pages":"Article 114441"},"PeriodicalIF":3.8000,"publicationDate":"2025-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Correlation between electrical and structural changes in amorphous ITO films\",\"authors\":\"Seonghoon Han ,&nbsp;Yeongjun Son ,&nbsp;Sehwan Song ,&nbsp;Jisung Lee ,&nbsp;Jong-Seong Bae ,&nbsp;Anh Tuan Thanh Pham ,&nbsp;Thang Bach Phan ,&nbsp;Jeong Hwan Kim ,&nbsp;Jong Mok Ok ,&nbsp;Dooyong Lee ,&nbsp;Sungkyun Park\",\"doi\":\"10.1016/j.vacuum.2025.114441\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>We investigated the temperature-dependent resistance, structural properties, and chemical state of amorphous ITO film during annealing under vacuum using <em>in-situ</em> analyses. <em>In-situ</em> resistance measurement revealed a sharp increase in resistance, reaching a maximum at approximately 180 °C and decreasing with a further increase in annealing temperature. <em>In-situ</em> X-ray diffraction confirmed the onset of crystallization of the amorphous ITO film at the temperature where the resistivity increased sharply. From the <em>in-situ</em> XPS analysis, we found no change in chemical states, such as oxygen vacancy or the formation of Sn<sup>4+</sup>. In the Hall effect measurement, we confirmed a significant decrease in mobility at the ITO film annealed in vacuum at 175 °C. This indicates the grain boundaries formed by the crystallization of ITO increase the electron scattering, causing a sharp increase in resistance at 180 °C. Our findings suggest that structural changes primarily drove the change in electrical properties of amorphous ITO during annealing. This study highlights the importance of real-time monitoring in understanding the dynamic change in ITO film and provides a comprehensive understanding of the structural and electrical transitions during crystallization.</div></div>\",\"PeriodicalId\":23559,\"journal\":{\"name\":\"Vacuum\",\"volume\":\"239 \",\"pages\":\"Article 114441\"},\"PeriodicalIF\":3.8000,\"publicationDate\":\"2025-05-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Vacuum\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0042207X25004312\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Vacuum","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0042207X25004312","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

摘要

我们用原位分析的方法研究了非晶ITO薄膜在真空退火过程中的温度依赖性电阻、结构特性和化学状态。原位电阻测量显示电阻急剧增加,在180℃左右达到最大值,并随着退火温度的进一步升高而减小。原位x射线衍射证实了非晶态ITO薄膜在电阻率急剧升高的温度下开始结晶。通过原位XPS分析,我们没有发现化学状态的变化,如氧空位或Sn4+的形成。在霍尔效应测量中,我们证实了在175°C真空退火下ITO薄膜的迁移率显著降低。这表明ITO结晶形成的晶界增加了电子散射,导致电阻在180℃时急剧增加。我们的研究结果表明,在退火过程中,结构变化主要驱动了非晶ITO电学性能的变化。这项研究强调了实时监测在理解ITO薄膜动态变化中的重要性,并提供了对结晶过程中结构和电转变的全面理解。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Correlation between electrical and structural changes in amorphous ITO films
We investigated the temperature-dependent resistance, structural properties, and chemical state of amorphous ITO film during annealing under vacuum using in-situ analyses. In-situ resistance measurement revealed a sharp increase in resistance, reaching a maximum at approximately 180 °C and decreasing with a further increase in annealing temperature. In-situ X-ray diffraction confirmed the onset of crystallization of the amorphous ITO film at the temperature where the resistivity increased sharply. From the in-situ XPS analysis, we found no change in chemical states, such as oxygen vacancy or the formation of Sn4+. In the Hall effect measurement, we confirmed a significant decrease in mobility at the ITO film annealed in vacuum at 175 °C. This indicates the grain boundaries formed by the crystallization of ITO increase the electron scattering, causing a sharp increase in resistance at 180 °C. Our findings suggest that structural changes primarily drove the change in electrical properties of amorphous ITO during annealing. This study highlights the importance of real-time monitoring in understanding the dynamic change in ITO film and provides a comprehensive understanding of the structural and electrical transitions during crystallization.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
Vacuum
Vacuum 工程技术-材料科学:综合
CiteScore
6.80
自引率
17.50%
发文量
0
审稿时长
34 days
期刊介绍: Vacuum is an international rapid publications journal with a focus on short communication. All papers are peer-reviewed, with the review process for short communication geared towards very fast turnaround times. The journal also published full research papers, thematic issues and selected papers from leading conferences. A report in Vacuum should represent a major advance in an area that involves a controlled environment at pressures of one atmosphere or below. The scope of the journal includes: 1. Vacuum; original developments in vacuum pumping and instrumentation, vacuum measurement, vacuum gas dynamics, gas-surface interactions, surface treatment for UHV applications and low outgassing, vacuum melting, sintering, and vacuum metrology. Technology and solutions for large-scale facilities (e.g., particle accelerators and fusion devices). New instrumentation ( e.g., detectors and electron microscopes). 2. Plasma science; advances in PVD, CVD, plasma-assisted CVD, ion sources, deposition processes and analysis. 3. Surface science; surface engineering, surface chemistry, surface analysis, crystal growth, ion-surface interactions and etching, nanometer-scale processing, surface modification. 4. Materials science; novel functional or structural materials. Metals, ceramics, and polymers. Experiments, simulations, and modelling for understanding structure-property relationships. Thin films and coatings. Nanostructures and ion implantation.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信