Fe-MOFs在单壁碳纳米角基体中原位生长,制备层次化Fe2O3@C/SWCNH超级电容器复合材料

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Yurong Liu, Ruifu Cui
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引用次数: 0

摘要

采用溶剂热法和高温煅烧工艺,在单壁碳纳米角(SWCNH)基体上原位生长铁基金属有机骨架(Fe-MOFs),合成了层次化Fe2O3@C/SWCNH复合材料。与Fe2O3@C、SWCNH和先前报道的Fe2O3/ c基电极材料相比,Fe2O3@C/SWCNH复合材料表现出优异的电化学性能,在0.5 a /g电流密度下具有293.9 F/g的高比电容和优越的倍率能力。在电流密度为1 A/g的条件下,经过1000次充放电循环后,比电容的保留率为80.6%,具有良好的长期循环稳定性。优异的电化学性能归功于复合材料的分层多孔结构,以及由SWCNH和Fe2O3@C产生的电双层电容器和伪电容器的协同效应,使Fe2O3@C/SWCNH复合材料成为储能应用的有希望的候选材料。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
In situ growth of Fe-MOFs in the matrix of single-walled carbon nanohorns to synthesize hierarchical Fe2O3@C/SWCNH composite for supercapacitors

The hierarchical Fe2O3@C/SWCNH composite has been synthesized through in situ growth of iron-based metal organic frameworks (Fe-MOFs) in the matrix of single-walled carbon nanohorns (SWCNHs) using solvothermal method and high temperature calcination process. Compared with Fe2O3@C, SWCNHs, and previously reported Fe2O3/C-based electrode materials, Fe2O3@C/SWCNH composite displays superior electrochemical performance, exhibiting a high specific capacitance of 293.9 F/g at the current density of 0.5 A/g and superior rate capability. After 1000 cycles of charge–discharge cycles at the current density of 1 A/g, 80.6% of the specific capacitance is retained, showing good long-term cycling stability. The excellent electrochemical performance is attributed to the hierarchical porous structure of the composite, and synergistic effect of electrical double-layer capacitor and pseudocapacitor arising from SWCNHs and Fe2O3@C, enabling Fe2O3@C/SWCNH composite a promising candidate for energy storage applications.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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