口袋辅助阶梯式隧道，改善纳米管tfet的带对带隧道效应

IF 1.9 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Journal Pub Date : 2025-04-23 DOI:10.1016/j.mejo.2025.106690

Rui Chen , Ruizhe Han , Tao Liu , Xinlong Shi , Liming Wang , Peijian Zhang , Min Xu , Huiyong Hu

{"title":"口袋辅助阶梯式隧道，改善纳米管tfet的带对带隧道效应","authors":"Rui Chen , Ruizhe Han , Tao Liu , Xinlong Shi , Liming Wang , Peijian Zhang , Min Xu , Huiyong Hu","doi":"10.1016/j.mejo.2025.106690","DOIUrl":null,"url":null,"abstract":"<div><div>This paper proposes a stepped tunneling nanotube tunnel field-effect transistor (ST-NT-TFET). By introducing a source-side doped pocket with the same polarity within the TFET channel and employing asymmetric gate bias modulation, the device transforms point tunneling into a stepped tunneling pathway, thereby enhancing the band-to-band tunneling effect. Using Si<sub>0.5</sub>Ge<sub>0.5</sub> as the source, the electrical characteristics and high-frequency performance of the ST-NT-TFET were investigated under different pocket parameters. Simulation results demonstrate that compared to conventional NT-TFETs with identical channel dimensions, the ST-NT-TFET achieves a 50% (p-TFET) and 109% (n-TFET) increase in on-state current, 92% (p) and 48% (n) enhancements in cut-off frequency, and 78% (p) and 66% boosts in gain-bandwidth product. The intrinsic delay is reduced by 55% (p) and 83% (n), while the effective drive current increases by 40% (p) and 135% (n). Circuit simulations further reveal that inverters constructed with ST-NT-TFETs exhibit a 27% increase in noise margin, 53% (fall time) and 31% (rise time) reductions in switching times, and an 11-stage ring oscillator frequency increased by 3.8 times (280% improvement).</div></div>","PeriodicalId":49818,"journal":{"name":"Microelectronics Journal","volume":"162 ","pages":"Article 106690"},"PeriodicalIF":1.9000,"publicationDate":"2025-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Pocket assisted stepped tunneling to improve the band-to-band tunneling effect of nanotube TFETs\",\"authors\":\"Rui Chen , Ruizhe Han , Tao Liu , Xinlong Shi , Liming Wang , Peijian Zhang , Min Xu , Huiyong Hu\",\"doi\":\"10.1016/j.mejo.2025.106690\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>This paper proposes a stepped tunneling nanotube tunnel field-effect transistor (ST-NT-TFET). By introducing a source-side doped pocket with the same polarity within the TFET channel and employing asymmetric gate bias modulation, the device transforms point tunneling into a stepped tunneling pathway, thereby enhancing the band-to-band tunneling effect. Using Si<sub>0.5</sub>Ge<sub>0.5</sub> as the source, the electrical characteristics and high-frequency performance of the ST-NT-TFET were investigated under different pocket parameters. Simulation results demonstrate that compared to conventional NT-TFETs with identical channel dimensions, the ST-NT-TFET achieves a 50% (p-TFET) and 109% (n-TFET) increase in on-state current, 92% (p) and 48% (n) enhancements in cut-off frequency, and 78% (p) and 66% boosts in gain-bandwidth product. The intrinsic delay is reduced by 55% (p) and 83% (n), while the effective drive current increases by 40% (p) and 135% (n). Circuit simulations further reveal that inverters constructed with ST-NT-TFETs exhibit a 27% increase in noise margin, 53% (fall time) and 31% (rise time) reductions in switching times, and an 11-stage ring oscillator frequency increased by 3.8 times (280% improvement).</div></div>\",\"PeriodicalId\":49818,\"journal\":{\"name\":\"Microelectronics Journal\",\"volume\":\"162 \",\"pages\":\"Article 106690\"},\"PeriodicalIF\":1.9000,\"publicationDate\":\"2025-04-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Microelectronics Journal\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S1879239125001390\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics Journal","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1879239125001390","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

摘要

提出了一种阶梯隧道纳米管隧道场效应晶体管（ST-NT-TFET）。该器件通过在TFET通道内引入具有相同极性的源侧掺杂口袋，并采用非对称栅偏置调制，将点隧穿转变为阶梯式隧穿通路，从而增强了带间隧穿效果。以Si0.5Ge0.5为源，研究了不同口袋参数下ST-NT-TFET的电特性和高频性能。仿真结果表明，与具有相同通道尺寸的传统nt - tfet相比，ST-NT-TFET的导通电流提高了50% （p- tfet）和109% (n- tfet)，截止频率提高了92% (p)和48% (n)，增益带宽乘积提高了78% (p)和66%。固有延迟降低了55% (p)和83% (n)，有效驱动电流增加了40% (p)和135% (n)。电路仿真进一步表明，用st - nt - tfet构建的逆变器的噪声裕度增加27%，开关时间减少53%（下降时间）和31%（上升时间），11级环振荡器频率增加3.8倍（提高280%）。

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Pocket assisted stepped tunneling to improve the band-to-band tunneling effect of nanotube TFETs

This paper proposes a stepped tunneling nanotube tunnel field-effect transistor (ST-NT-TFET). By introducing a source-side doped pocket with the same polarity within the TFET channel and employing asymmetric gate bias modulation, the device transforms point tunneling into a stepped tunneling pathway, thereby enhancing the band-to-band tunneling effect. Using Si_0.5Ge_0.5 as the source, the electrical characteristics and high-frequency performance of the ST-NT-TFET were investigated under different pocket parameters. Simulation results demonstrate that compared to conventional NT-TFETs with identical channel dimensions, the ST-NT-TFET achieves a 50% (p-TFET) and 109% (n-TFET) increase in on-state current, 92% (p) and 48% (n) enhancements in cut-off frequency, and 78% (p) and 66% boosts in gain-bandwidth product. The intrinsic delay is reduced by 55% (p) and 83% (n), while the effective drive current increases by 40% (p) and 135% (n). Circuit simulations further reveal that inverters constructed with ST-NT-TFETs exhibit a 27% increase in noise margin, 53% (fall time) and 31% (rise time) reductions in switching times, and an 11-stage ring oscillator frequency increased by 3.8 times (280% improvement).

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来源期刊

Microelectronics Journal 工程技术-工程：电子与电气

CiteScore

4.00

自引率

27.30%

发文量

222

审稿时长

43 days

期刊介绍： Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems. The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc. Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.